AON6516 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial VDS RDS(ON) (at VGS=10V) < 5mΩ RDS(ON) (at VGS = 4.5V) < 8mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View 30V 32A ID (at VGS=10V) D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current C V A 127 27 IDSM TA=70°C ±20 25 IDM TA=25°C Units V 32 ID TC=100°C Maximum 30 A 22 Avalanche Current C IAS 34 A Avalanche energy L=0.05mH C EAS 29 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev0: Sep 2011 6 Steady-State Steady-State RθJA RθJC W 3.8 TJ, TSTG Symbol t ≤ 10s W 10 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 25 -55 to 150 Typ 17 44 3.5 www.aosmd.com °C Max 21 53 5 Units °C/W °C/W °C/W Page 1 of 6 AON6516 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=20A µA 5 1.2 0.8 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ 1.8 100 nA 2.2 V 4 5 6.4 8 6.4 8 83 0.7 mΩ mΩ S 1 V 30 A 1229 pF 526 pF 83 pF 1.7 2.6 Ω 24 33 nC 12 17 nC 4 nC Gate Drain Charge 5.5 nC Turn-On DelayTime 7.0 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 4.8 ns 24.0 ns tf Turn-Off Fall Time 5.8 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 12.6 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 15.2 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Sep 2011 www.aosmd.com Page 2 of 6 AON6516 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4.5V 6V 80 VDS=5V 80 8V 4V 60 ID(A) ID (A) 60 3.5V 40 40 20 20 125°C 25°C VGS=3V 0 0 0 1 2 3 4 0 5 10 2 3 4 5 6 Normalized On-Resistance 1.6 8 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 6 4 VGS=10V 2 0 VGS=10V ID=20A 1.4 17 5 2 10 =4.5V 1.2 1 VGS ID=20A 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 15 1.0E+02 ID=20A 1.0E+01 12 40 125°C 9 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 1.0E-02 6 25°C 1.0E-03 25°C 3 125°C 1.0E-01 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: Sep 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6516 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 Ciss 1200 Capacitance (pF) VGS (Volts) 1400 VDS=15V ID=20A 8 6 4 1000 800 600 Coss 400 2 200 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 25 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 200 1000.0 160 10µs 100.0 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C Power (W) 10.0 0.1 TJ(Max)=150°C TC=25°C 10µs RDS(ON) ID (Amps) Crss 0 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5°C/W PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: Sep 2011 www.aosmd.com Page 4 of 6 AON6516 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 Current rating ID(A) Power Dissipation (W) 30 20 10 40 30 20 10 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=53°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev0: Sep 2011 www.aosmd.com Page 5 of 6 AON6516 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev0: Sep 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6