PANASONIC 2SC2671

Transistor
2SC2671(F)
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
5.0±0.2
●
Low noise figure NF.
High gain.
High transition frequency fT.
■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCER*
14
V
Emitter to base voltage
VEBO
2
V
Collector current
IC
80
mA
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
*REB
+0.2
+0.2
0.45 –0.1
0.45 –0.1
1.27
1.27
2.3±0.2
●
13.5±0.5
●
5.1±0.2
■ Features
4.0±0.2
1 2 3
2.54±0.15
1:Base
2:Emitter
3:Collector
JEDEC:TO–92
EIAJ:SC–43A
= 1kΩ
■ Electrical Characteristics
Parameter
(Ta=25˚C)
Symbol
Conditions
min
typ
Collector cutoff current
ICBO
VCB = 10V, IE = 0
Emitter cutoff current
IEBO
VEB = 1V, IC = 0
Forward current transfer ratio
hFE
VCE = 8V, IC = 40mA
50
150
Transition frequency
fT*
VCE = 8V, IC = 40mA, f = 800MHz
3.5
5.5
Collector output capacitance
Cob*
VCB = 10V, IE = 0, f = 1MHz
0.8
max
Unit
1
µA
1
µA
300
GHz
1.5
pF
Foward transfer gain
| S21e
|2
VCE = 8V, IC = 40mA, f = 800MHz
9
12
Maximum unilateral power gain
GUM*
VCE = 8V, IC = 40mA, f = 800MHz
10
13
15
dB
Noise figure
NF*
VCE = 8V, IC = 40mA, f = 800MHz
2.0
3.2
dB
Second inter modulation distortion IM2*
Third inter modulation distortion
*LTPD
IM3*
VCE = 8V, IC = 40mA, f1 = 200MHz
f2 = 500MHz, VO = 100dBµ/75Ω
VCE = 8V, IC = 40mA, f1 = 600MHz
f2 = 500MHz, VO = 100dBµ/75Ω
dB
50
60
dB
75
86
dB
= 10%
1
2SC2671(F)
Transistor
PC — Ta
IC — VCE
60
IB=400µA
0.4
0.2
40
250µA
200µA
30
150µA
20
100µA
120
160
200
240
2
10
3
1
0.3
Ta=75˚C, 25˚C, –25˚C
0.1
0.03
0.3
1
3
10
30
0.4
10
0.4
30
100
Collector to base voltage VCB (V)
0.8
1.2
Ta=75˚C
300
25˚C
200
–25˚C
100
1
3
10
24
30
VCB=8V
f=800MHz
Ta=25˚C
10
8
6
4
2
0
– 0.1 – 0.3
100
–1
–3
–10
–30
–100
Emitter current IE (mA)
NF — IC
12
VCE=8V
f=800MHz
Ta=25˚C
20
16
12
8
4
0
0.1
2.0
fT — I E
400
0.3
1.6
Base to emitter voltage VBE (V)
VCE=8V
(Rg=50Ω)
f=800MHz
Ta=25˚C
10
Noise figure NF (dB)
Maximum unilateral power gain GUM (dB)
0.8
3
0
GUM — IC
1.2
1
12
Collector current IC (mA)
IE=0
f=1MHz
Ta=25˚C
0.3
10
500
0
0.1
100
1.6
0
0.1
8
12
Cob — VCB
2.0
6
VCE=8V
Collector current IC (mA)
2.4
4
600
Forward current transfer ratio hFE
30
0.01
0.1
40
hFE — IC
IC/IB=10
–25˚C
60
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
Ta=75˚C
0
0
Transition frequency fT (MHz)
80
25˚C
80
20
50µA
0
40
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
100
300µA
10
0
Collector output capacitance Cob (pF)
VCE=8V
Ta=25˚C
350µA
Collector current IC (mA)
0.6
0
2
IC — VBE
120
50
0.8
Collector current IC (mA)
Collector power dissipation PC (W)
1.0
8
6
4
2
0.3
1
3
10
30
Collector current IC (mA)
100
0
0.1
0.3
1
3
10
30
Collector current IC (mA)
100