Transistor 2SC3829 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm +0.2 2.8 –0.3 (Ta=25˚C) Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V Collector current IC 80 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1.45 0.95 +0.1 0.16 –0.06 +0.1 1:Base 2:Emitter 3:Collector 0 to 0.1 Symbol Parameter 3 0.1 to 0.3 0.4±0.2 Parameter ■ Electrical Characteristics 0.95 1.9±0.2 1.1 –0.1 ■ Absolute Maximum Ratings 1 2 +0.2 ● 0.65±0.15 0.8 ● +0.2 ● 0.65±0.15 Low noise figure NF. High gain. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.9 –0.05 ● 0.4 –0.05 ■ Features +0.25 1.5 –0.05 JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 3M (Ta=25˚C) Symbol Conditions min Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 2V, IC = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 15 Collector to emitter voltage VCEO IC = 100µA, IB = 0 10 Forward current transfer ratio hFE VCE = 8V, IC = 20mA 50 Transition frequency fT VCE = 8V, IC = 20mA, f = 800MHz 5 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz typ VCB = 10V, IE = 0 |2 Foward transfer gain | S21e Maximum unilateral power gain GUM VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz Noise figure NF VCE = 8V, IC = 20mA, f = 800MHz Unit 1 µA 1 µA V V 150 300 6 0.7 10 max GHz 1.2 pF 13.5 dB 15 dB 2 dB 1 Transistor 2SC3829 PC — Ta IC — VCE 120 IB=200µA 20 160 120 80 40 180µA 160µA 16 140µA 120µA 12 100µA 80µA 8 60µA 40µA 4 25˚C Ta=75˚C –25˚C 80 60 40 20 20µA 0 40 60 80 100 120 140 160 0 0 2 10 3 Ta=75˚C 25˚C –25˚C 0.1 0.03 0.01 0.1 0.3 1 3 10 30 400 Ta=75˚C 300 25˚C 200 –25˚C 100 0.3 0.4 1 3 10 1 3 10 30 30 100 Collector to base voltage VCB (V) 24 2.0 6 4 2 0.3 1 3 10 30 100 Collector current IC (mA) NF — IC 12 VCE=8V f=800MHz Ta=25˚C 20 16 12 8 4 0 0.1 1.6 8 0 0.1 100 VCE=8V (Rg=50Ω) f=800MHz Ta=25˚C 10 Noise figure NF (dB) Maximum unilateral power gain GUM (dB) 0.8 1.2 VCE=8V f=800MHz Ta=25˚C GUM — IC 1.2 0.8 10 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 0.3 0.4 Base to emitter voltage VBE (V) fT — IC 500 0 0.1 100 1.6 0 0.1 0 12 Cob — VCB 2.0 12 VCE=8V Collector current IC (mA) 2.4 10 600 Forward current transfer ratio hFE 30 0.3 8 hFE — IC IC/IB=10 1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 4 Transition frequency fT (GHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 100 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=8V Ta=25˚C 0 2 IC — VBE 24 Collector current IC (mA) Collector power dissipation PC (mW) 240 8 6 4 2 0.3 1 3 10 30 Collector current IC (mA) 100 0 0.1 0.3 10 3 100 300 Collector current IC (mA) 1000