12MHz Rail-to-Rail Input-Output Op Amps Features General Description • 12MHz -3dB bandwidth • Supply voltage = 4.5V to 16.5V • Low supply current (per amplifier) = 500µA • High slew rate = 10V/µs • Unity-gain stable • Beyond the rails input capability • Rail-to-rail output swing • Ultra-small package The EL5420C and EL5220C are low power, high voltage, rail-to-rail input-output amplifiers. The EL5220C contains two amplifiers in one package, and the EL5420C contains four amplifiers. Operating on supplies ranging from 5V to 15V, while consuming only 500µA per amplifier, the EL5420C and EL5220C have a bandwidth of 12MHz -(-3dB). They also provide common mode input ability beyond the supply rails, as well as rail-to-rail output capability. This enables these amplifiers to offer maximum dynamic range at any supply voltage. Applications • • • • • • • • • • • • TFT-LCD drive circuits Electronics notebooks Electronics games Touch-screen displays Personal communication devices Personal digital assistants (PDA) Portable instrumentation Sampling ADC amplifiers Wireless LANs Office automation Active filters ADC/DAC buffer The EL5420C and EL5220C also feature fast slewing and settling times, as well as a high output drive capability of 30mA (sink and source). These features make these amplifiers ideal for use as voltage reference buffers in Thin Film Transistor Liquid Crystal Displays (TFT-LCD). Other applications include battery power, portable devices, and anywhere low power consumption is important. The EL5420C is available in a space-saving 14-pin TSSOP package, the industry-standard 14-pin SO package, as well as a 16-pin LPP package. The EL5220C is available in the 8-pin MSOP package. Both feature a standard operational amplifier pin out. These amplifiers are specified for operation over the full -40°C to +85°C temperature range. Connection Diagrams VOUTA 1 Ordering Information Package EL5220CY 8-Pin MSOP - MDP0043 EL5220CY-T7 8-Pin MSOP 7” MDP0043 EL5220CY-T13 8-Pin MSOP 13” MDP0043 EL5420CL 16-Pin LPP - MDP0046 EL5420CL-T7 16-Pin LPP 7” MDP0046 Part No. EL5420CL-T13 14 VOUTD VINA- 2 Tape & Reel Outline # 13” MDP0046 14-Pin TSSOP - MDP0044 EL5420CR-T7 14-Pin TSSOP 7” MDP0044 EL5420CR-T13 14-Pin TSSOP 13” MDP0044 EL5420CS 14-Pin SO - MDP0027 EL5420CS-T7 14-Pin SO 7” MDP0027 EL5420CS-T13 14-Pin SO 13” MDP0027 VINA+ 3 13 VIND+ + VS+ 4 11 VS- VINB+ 5 VINB- 6 VOUTB 7 12 VIND+ + - + - VOUTA 1 10 VINC+ VINA- 2 9 VINC- VINA+ 3 8 VOUTC EL5420C (14-Pin TSSOP & 14-Pin SO) 8 VS+ + 7 VOUTB + VS- 4 6 VINB5 VINB+ EL5220C (8-Pin MSOP) Connection Diagrams are continued on page 4 Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. © 2001 Elantec Semiconductor, Inc. September 19, 2001 16-Pin LPP EL5420CR EL5220C, EL5420C EL5220C, EL5420C EL5220C, EL5420C EL5220C, EL5420C 12MHz Rail-to-Rail Input-Output Op Amps Absolute Maximum Ratings (T A = 25°C) Values beyond absolute maximum ratings can cause the device to be prematurely damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied Supply Voltage between VS+ and VS+18V Input Voltage VS- - 0.5V, VS +0.5V Maximum Continuous Output Current 30mA Maximum Die Temperature Storage Temperature Operating Temperature Power Dissipation ESD Voltage +125°C -65°C to +150°C -40°C to +85°C See Curves 2kV Important Note: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Electrical Characteristics VS+= +5V, VS - = -5V, RL = 10kΩ and CL = 10pF to 0V, TA = 25°C unless otherwise specified. Parameter Description Condition Min Typ Max 12 Unit Input Characteristics VOS Input Offset Voltage VCM = 0V 2 TCVOS Average Offset Voltage Drift [1] 5 IB Input Bias Current VCM = 0V 2 RIN Input Impedance CIN Input Capacitance CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -5.5V to +5.5V 50 70 dB AVOL Open-Loop Gain -4.5V ≤ VOUT ≤ +4.5V 75 95 dB 50 1 nA GΩ 1.35 -5.5 mV µV/°C pF +5.5 V Output Characteristics VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT -4.92 4.85 -4.85 V 4.92 V Short Circuit Current ±120 mA Output Current ±30 mA Power Supply Performance PSRR Power Supply Rejection Ratio VS is moved from ±2.25V to ±7.75V IS Supply Current (Per Amplifier) No load 60 80 500 dB 750 µA Dynamic Performance SR Slew Rate [2] -4.0V ≤ VOUT ≤ +4.0V, 20% to 80% 10 tS Settling to +0.1% (AV = +1) (AV = +1), V O = 2V step 500 ns BW -3dB Bandwidth RL = 10kΩ, CL = 10pF 12 MHz GBWP Gain-Bandwidth Product RL = 10kΩ, CL = 10pF 8 MHz PM Phase Margin RL = 10kΩ, CL = 10 pF 50 ° CS Channel Separation f = 5MHz 75 dB 1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 2 V/µs Electrical Characteristics VS+ = 5V, VS-= 0V, R L = 10kΩ and CL = 10pF to 2.5V, TA = 25°C unless otherwise specified. Parameter Description Condition Min Typ Max 10 Unit Input Characteristics VOS Input Offset Voltage VCM = 2.5V 2 TCVOS Average Offset Voltage Drift [1] 5 IB Input Bias Current VCM = 2.5V 2 RIN Input Impedance CIN Input Capacitance CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -0.5V to +5.5V 45 66 dB AVOL Open-Loop Gain 0.5V ≤ VOUT ≤+ 4.5V 75 95 dB 4.85 4.92 V 50 1 nA GΩ 1.35 -0.5 mV µV/°C pF +5.5 V Output Characteristics VOL Output Swing Low IL = -5mA VOH Output Swing High IL = +5mA 80 150 mV ISC Short Circuit Current ±120 mA IOUT Output Current ±30 mA Power Supply Performance PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current (Per Amplifier) No load 60 80 500 dB 750 µA Dynamic Performance SR Slew Rate [2] 1V ≤ VOUT ≤ 4V, 20% to 80% 10 tS Settling to +0.1% (AV = +1) (AV = +1), V O = 2V step 500 ns BW -3dB Bandwidth RL = 10kΩ, CL = 10pF 12 MHz GBWP Gain-Bandwidth Product RL = 10 kΩ, CL = 10pF 8 MHz PM Phase Margin RL = 10 kΩ, CL = 10 pF 50 ° CS Channel Separation f = 5MHz 75 dB V/µs 1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges Electrical Characteristics VS+ = 15V, VS- = 0V, RL = 10kΩ and C L = 10pF to 7.5V, TA = 25°C unless otherwise specified. Parameter Description Condition Min Typ Max 14 Unit Input Characteristics VOS Input Offset Voltage VCM = 7.5V 2 TCVOS Average Offset Voltage Drift [1] 5 IB Input Bias Current VCM = 7.5V 2 RIN Input Impedance CIN Input Capacitance CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -0.5V to +15.5V 53 72 dB AVOL Open-Loop Gain 0.5V ≤ VOUT ≤ 14.5V 75 95 dB 14.85 14.92 50 1 nA GΩ 1.35 -0.5 mV µV/°C pF +15.5 V Output Characteristics VOL Output Swing Low IL = -5mA VOH Output Swing High IL = +5mA 80 3 150 mV V EL5220C, EL5420C EL5220C, EL5420C 12MHz Rail-to-Rail Input-Output Op Amps 12MHz Rail-to-Rail Input-Output Op Amps Electrical Characteristics (Continued) VS+ = 15V, VS- = 0V, RL = 10kΩ and C L = 10pF to 7.5V, TA = 25°C unless otherwise specified. Parameter Description Condition Min Typ Max Unit ISC Short Circuit Current ±120 mA IOUT Output Current ±30 mA Power Supply Performance PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current (Per Amplifier) No load 60 80 500 dB 750 µA Dynamic Performance SR Slew Rate [2] 1V ≤ VOUT ≤ 14V, 20% to 80% 10 tS Settling to +0.1% (AV = +1) (AV = +1), V O = 2V step 500 ns BW -3dB Bandwidth RL = 10kΩ, CL = 10pF 12 MHz GBWP Gain-Bandwidth Product RL = 10kΩ, CL = 10pF 8 MHz PM Phase Margin RL = 10kΩ, CL = 10 pF 50 ° CS Channel Separation f = 5MHz 75 dB 1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 13 NC 14 VOUTD 15 VOUTA 16 NC Connection Diagrams (Continued) VINA- 1 12 VIND- VINA+ 2 11 VIND+ Thermal Pad VS+ 3 10 VS- EL5420C (16-Pin LPP) 4 VINC- 8 VOUTC 7 9 VINC+ VOUTB 6 VINB+ 4 VINB- 5 EL5220C, EL5420C EL5220C, EL5420C V/µs Typical Performance Curves EL5420C Input Offset Voltage Drift EL5420C Input Offset Voltage Distribution 70 1800 1200 1000 800 600 400 50 40 30 20 10 200 21 19 17 15 13 9 Input Offset Voltage Drift, TCVOS (µV/°C) Input Offset Voltage (mV) Input Offset Voltage vs Temperature Input Bias Current vs Temperature 10 2.0 Input Bias Current (nA) VS=±5V 5 0 -5 VS=±5V 0.0 -2.0 -50 0 50 100 150 -50 0 Temperature (°C) 50 100 150 100 150 Temperature (°C) Output High Voltage vs Temperature Output Low Voltage vs Temperature 4.97 -4.91 -4.92 VS=±5V IOUT=5mA 4.96 Output Low Voltage (V) Output High Voltage (V) 11 7 5 1 12 8 10 6 4 2 -0 -2 -4 -6 -8 -10 -12 3 0 0 Input Offset Voltage (mV) Typical Production Distribution VS=±5V 60 Quantity (Amplifiers) 1400 Quantity (Amplifiers) Typical Production Distribution VS=±5V TA=25°C 1600 4.95 4.94 VS=±5V IOUT=-5mA -4.93 -4.94 -4.95 -4.96 4.93 -50 0 50 100 -4.97 150 Temperature (°C) -50 0 50 Temperature (°C) 5 EL5220C, EL5420C EL5220C, EL5420C 12MHz Rail-to-Rail Input-Output Op Amps 12MHz Rail-to-Rail Input-Output Op Amps Typical Performance Curves Slew Rate vs Temperature Open-Loop Gain vs Temperature 10.40 VS=±5V VS=±5V RL=10kΩ Slew Rate (V/µS) Open-Loop Gain (dB) 100 90 80 10.35 10.30 10.25 -50 0 50 100 0 -50 150 50 100 150 Temperature (°C) Temperature (°C) EL5420C Supply Current per Amplifier vs Supply Voltage EL5420C Supply Current per Amplifier vs Temperature 700 TA=25°C VS=±5V Supply Current (µA) Supply Current (mA) 0.55 0.5 600 500 400 0.45 -50 0 50 100 300 150 5 0 Temperature (°C) 50 -130 0 10 100 1k -180 Gain 10k 100k 1M Phase(°) -80 Magnitude (Normalized) (dB) -30 Phase 100 -50 5 20 VS=±5V, TA=25°C RL=10KΩ to GND CL=12pF to GND 20 Frequency Response for Various RL 200 150 15 10 Supply Voltage (V) Open Loop Gain and Phase vs Frequency Gain (dB) EL5220C, EL5420C EL5220C, EL5420C 10M 10kΩ 0 -5 1kΩ CL=10pF AV=1 VS=±5V 150Ω -10 -15 100k -230 100M 560Ω 1M 10M Frequency (Hz) Frequency (Hz) 6 100M Typical Performance Curves Frequency Response for Various CL Closed Loop Output Impedance vs Frequency 200 RL=10kΩ AV=1 VS=±5V 10 12pF 0 50pF -10 100pF -20 120 80 40 1000pF -30 100k AV=1 VS=±5V TA=25°C 160 Output Impedance (Ω) Magnitude (Normalized) (dB) 20 1M 0 10k 100M 10M Maximum Output Swing vs Frequency CMRR vs Frequency 80 10 60 8 CMRR (dB) Maximum Output Swing (VP-P) 10M Frequency (Hz) 12 6 VS=±5V TA=25°C AV=1 RL=10kΩ CL=12pF Distortion <1% 4 2 0 10k 40 20 VS=±5V TA=25°C 100 1M 0 100 10M 1k 10k 10M 600 PSRR+ Voltage Noise (nV√Hz) PSRR- 60 1M Input Voltage Noise Spectral Density vs Frequency PSRR vs Frequency 80 100k Frequency (Hz) Frequency (Hz) PSRR (dB) 1M 100 Frequency (Hz) 40 20 100 10 VS=±5V TA=25°C 0 100 1k 10k 100k 1M 1 100 10M Frequency (Hz) 7 1k 10k 100k 1M Frequency (Hz) 10M 100M EL5220C, EL5420C EL5220C, EL5420C 12MHz Rail-to-Rail Input-Output Op Amps 12MHz Rail-to-Rail Input-Output Op Amps Typical Performance Curves Total Harmonic Distortion + Noise vs Frequency Channel Separation vs Frequency Response 0.010 -60 Dual measured Channel A to B Quad measured Channel A to D or B to C Other combinations yield improved rejection 0.009 0.008 -80 VS=±5V RL=10kΩ AV=1 VIN=220mVRMS X-Talk (dB) THD+ N (%) 0.007 0.006 0.005 0.004 VS=±5V RL=10kΩ AV=1 VIN=1VRMS 0.003 0.002 1k -100 -120 0.001 10k Frequency (Hz) -140 100k 100k 1M VS=±5V AV=1 RL=10kΩ CL=12pF TA=25°C 4 3 2 Step Size (V) 70 10k 6M Settling Time vs Step Size VS=±5V AV=1 RL=10kΩ VIN=±50mV TA=25°C 90 1k Frequency (Hz) Small-Signal Overshoot vs Load Capacitance Overshoot (%) EL5220C, EL5420C EL5220C, EL5420C 50 30 1 0.1% 0 -1 -2 0.1% -3 -4 10 10 100 Load Capacitance (pF) 0 1000 400 600 800 Settling Time (nS) Large Signal Transient Response 1V 200 Small Signal Transient Response 1µS 50mV 200ns VS=±5V TA=25°C AV=1 RL=10kΩ CL=12pF VS=±5V TA=25°C AV=1 RL=10kΩ CL=12pF 8 Pin Descriptions EL5420C EL5220C Pin Name 1 1 VOUTA Pin Function Equivalent Circuit Amplifier A Output VS+ VS- GND Circuit 1 2 2 VINA- Amplifier A Inverting Input VS+ VSCircuit 2 3 3 VINA+ Amplifier A Non-Inverting Input (Reference Circuit 2) 4 8 VS+ 5 5 VINB+ Amplifier B Non-Inverting Input (Reference Circuit 2) 6 6 VINB- Amplifier B Inverting Input (Reference Circuit 2) 7 7 VOUTB Amplifier B Output (Reference Circuit 1) 8 VOUTC Amplifier C Output (Reference Circuit 1) 9 VINC- Amplifier C Inverting Input (Reference Circuit 2) 10 VINC+ Amplifier C Non-Inverting Input (Reference Circuit 2) 11 4 VS- Positive Power Supply Negative Power Supply 12 VIND+ Amplifier D Non-Inverting Input (Reference Circuit 2) 13 VIND- Amplifier D Inverting Input (Reference Circuit 2) 14 VOUTD Amplifier D Output (Reference Circuit 1) 9 EL5220C, EL5420C EL5220C, EL5420C 12MHz Rail-to-Rail Input-Output Op Amps 12MHz Rail-to-Rail Input-Output Op Amps Applications Information Product Description Figure 1. Operation with Rail-to-Rail Input and Output Operating Voltage, Input, and Output Short Circuit Current Limit The EL5220C and EL5420C are specified with a single nominal supply voltage from 5V to 15V or a split supply with its total range from 5V to 15V. Correct operation is guaranteed for a supply range of 4.5V to 16.5V. Most EL5220C and EL5420C specifications are stable over both the full supply range and operating temperatures of -40 °C to +85 °C. Parameter variations with operating voltage and/or temperature are shown in the typical performance curves. The EL5220C and EL5420C will limit the short circuit current to ±120mA if the output is directly shorted to the positive or the negative supply. If an output is shorted indefinitely, the power dissipation could easily increase such that the device may be damaged. Maximum reliability is maintained if the output continuous current never exceeds ±30 mA. This limit is set by the design of the internal metal interconnects. VS=±5V TA=25°C AV=1 VIN=10VP-P Input The EL5220C and EL5420C voltage feedback amplifiers are fabricated using a high voltage CMOS process. They exhibit rail-to-rail input and output capability, they are unity gain stable, and have low power consumption (500µA per amplifier). These features make the EL5220C and EL5420C ideal for a wide range of general-purpose applications. Connected in voltage follower mode and driving a load of 10kΩ and 12pF, the EL5220C and EL5420C have a -3dB bandwidth of 12MHz while maintaining a 10V/µs slew rate. The EL5220C is a dual amplifier while the EL5420C is a quad amplifier. Output EL5220C, EL5420C EL5220C, EL5420C Output Phase Reversal The input common-mode voltage range of the EL5220C and EL5420C extends 500mV beyond the supply rails. The output swings of the EL5220C and EL5420C typically extend to within 80mV of positive and negative supply rails with load currents of 5mA. Decreasing load currents will extend the output voltage range even closer to the supply rails. Figure 1 shows the input and output waveforms for the device in the unity-gain configuration. Operation is from ±5V supply with a 10kΩ load connected to GND. The input is a 10VP-P sinusoid. The output voltage is approximately 9.985VP-P. The EL5220C and EL5420C are immune to phase reversal as long as the input voltage is limited from (VS-) ----0.5V to (VS+) +0.5V. Figure 2 shows a photo of the output of the device with the input voltage driven beyond the supply rails. Although the device's output will not change phase, the input's overvoltage should be avoided. If an input voltage exceeds supply voltage by more than 0.6V, electrostatic protection diodes placed in the input stage of the device begin to conduct and overvoltage damage could occur. 10 when sourcing, and: 1V 100µs P DMAX = Σi × [ V S × I SMAX + ( V OUT i – V S - ) × I LOAD i ] when sinking. where i = 1 to 2 for Dual and 1 to 4 for Quad VS=±2.5V TA=25°C AV=1 VIN=6VP-P VS = Total Supply Voltage ISMAX = Maximum Supply Current Per Amplifier 1V VOUTi = Maximum Output Voltage of the Application Figure 2. Operation with Beyond-the-Rails Input ILOADi = Load Current If we set the two PDMAX equations equal to each other, we can solve for RLOADi to avoid device overheat. Figures 3, 4, and 5 provide a convenient way to see if the device will overheat. The maximum safe power dissipation can be found graphically, based on the package type and the ambient temperature. By using the previous equation, it is a simple matter to see if PDMAX exceeds the device's power derating curves. To ensure proper operation, it is important to observe the recommended derating curves in Figures 3, 4, and 5. Power Dissipation With the high-output drive capability of the EL5220C and EL5420C amplifiers, it is possible to exceed the 125°C “absolute-maximum junction temperature” under certain load current conditions. Therefore, it is important to calculate the maximum junction temperature for the application to determine if load conditions need to be modified for the amplifier to remain in the safe operating area. The maximum power dissipation allowed in a package is determined according to: 1200 T JMAX – T AMAX P DMAX = -----------------------------------------------Θ JA JEDEC JESD51-7 High Effective Thermal Conductivity (4Layer) Test Board LPP exposed diepad soldered to PCB per JESD51-5 Power Dissipation (mW) where: TJMAX = Maximum Junction Temperature TAMAX= Maximum Ambient Temperature θJA = Thermal Resistance of the Package MAX TJ=125°C 1.136W 1000 TSSOP14 θJA=100°C/W 1.0W 800 870mW SO14 θJA=88°C/W 600 MSOP8 θJA=115°C/W 400 200 PDMAX = Maximum Power Dissipation in the Package 0 The maximum power dissipation actually produced by an IC is the total quiescent supply current times the total power supply voltage, plus the power in the IC due to the loads, or: 0 25 50 75 85 100 125 150 Ambient Temperature (°C) Figure 3. Package Power Dissipation vs Ambient Temperature P DMAX = Σi × [ V S × I SMAX + ( V S + – V OUT i ) × I LOAD i ] 11 EL5220C, EL5420C EL5220C, EL5420C 12MHz Rail-to-Rail Input-Output Op Amps 12MHz Rail-to-Rail Input-Output Op Amps 1200 the peaking increase. The amplifiers drive 10pF loads in parallel with 10kΩ with just 1.5dB of peaking, and 100pF with 6.4dB of peaking. If less peaking is desired in these applications, a small series resistor (usually between 5Ω and 50Ω) can be placed in series with the output. However, this will obviously reduce the gain slightly. Another method of reducing peaking is to add a “snubber” circuit at the output. A snubber is a shunt load consisting of a resistor in series with a capacitor. Values of 150Ω and 10nF are typical. The advantage of a snubber is that it does not draw any DC load current or reduce the gain JEDEC JESD51-3 and SEMI G42-88 (Single Layer) Test Board MAX TJ=125°C 1000 SO14 θJA=120°C/W Power Dissipation (mW) 833mW 800 LPP16 θJA=150°C/W 667mW 600 606mW TSSOP14 θJA=165°C/W 400 485mW MSOP8 θJA=206°C/W 200 0 0 25 50 75 85 100 125 150 Power Supply Bypassing and Printed Circuit Board Layout Ambient Temperature (°C) Figure 4. Package Power Dissipation vs Ambient Temperature 3 The EL5220C and EL5420C can provide gain at high frequency. As with any high-frequency device, good printed circuit board layout is necessary for optimum performance. Ground plane construction is highly recommended, lead lengths should be as short as possible and the power supply pins must be well bypassed to reduce the risk of oscillation. For normal single supply operation, where the VS- pin is connected to ground, a 0.1µF ceramic capacitor should be placed from VS+ to pin to VS- pin. A 4.7µF tantalum capacitor should then be connected in parallel, placed in the region of the amplifier. One 4.7µF capacitor may be used for multiple devices. This same capacitor combination should be placed at each supply pin to ground if split supplies are to be used. JEDEC JESD51-7 High Effective Thermal Conductivity (4Layer) Test Board (LPP exposed diepad soldered to PCB per JESD51-5) 2.500W 2.5 Power Dissipation (W) EL5220C, EL5420C EL5220C, EL5420C LP P1 40 6 °C /W 2 1.5 1 0.5 0 0 25 50 75 85 100 125 150 Ambient Temperature (°C) Figure 5. Package Power Dissipation vs Ambient Temperature Unused Amplifiers It is recommended that any unused amplifiers in a dual and a quad package be configured as a unity gain follower. The inverting input should be directly connected to the output and the non-inverting input tied to the ground plane. Driving Capacitive Loads The EL5220C and EL5420C can drive a wide range of capacitive loads. As load capacitance increases, however, the -3dB bandwidth of the device will decrease and 12 EL5220C, EL5420C EL5220C, EL5420C 12MHz Rail-to-Rail Input-Output Op Amps General Disclaimer Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement. September 19, 2001 WARNING - Life Support Policy Elantec, Inc. products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. Products in Life Support Systems are requested to contact Elantec, Inc. factory headquarters to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages. Elantec Semiconductor, Inc. 675 Trade Zone Blvd. Milpitas, CA 95035 Telephone: (408) 945-1323 (888) ELANTEC Fax: (408) 945-9305 European Office: +44-118-977-6020 Japan Technical Center: +81-45-682-5820 13 Printed in U.S.A.