P3P8220A/AH General Purpose Peak EMI Reduction IC Functional Description P3P8220A/AH is a versatile, 1.8V/2.5V/3.3V Peak EMI reduction IC. P3P8220A accepts an input clock from an external reference and delivers a 1x modulated clock output. P3P8220A is a Low drive part and P3P8220AH is a High drive part. Refer to DC/AC Electrical characteristic table. P3P8220A/AH operates with 1.8V/2.5V/3.3V supply and is available in an 8 Pin, WDFN (2 mm x 2 mm) Package. General Features • • • • • • • http://onsemi.com MARKING DIAGRAM WDFN8 CASE 511AQ 1 1x, LVCMOS Peak EMI Reduction Supports Non−continuous Input Clock Applications Input / Output Frequency Range: Up to 60 MHz Low and High Drive Part Supply Voltage: 1.8 V±0.1 V 2.5 V±0.2 V 3.3 V±0.3 V 8−Pin, WDFN(2 mm x 2 mm) Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Application • P3P8220A is Targeted Towards Consumer Electronic Applications VDD 1 GH MG G GH = Specific Device Code M = Date Code G = Pb−Free Device PIN CONFIGURATION CLKIN 1 8 VDD NC 2 7 NC NC 3 6 NC GND 4 5 ModOUT ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. CLKIN Digital Frequency Modulation ModOUT GND Figure 1. Block Diagram © Semiconductor Components Industries, LLC, 2011 April, 2011 − Rev. 0 1 Publication Order Number: P3P8220A/D P3P8220A/AH Table 1. PIN DESCRIPTION Pin # Pin Name Type 1 CLKIN I 2 NC No connection 3 NC No connection 4 GND P Ground 5 ModOUT O Buffered Modulated Clock output. 6 NC No connection 7 NC No connection 8 VDD P Description External reference Clock Input 1.8V/2.5V/3.3V Supply Voltage Table 2. OPERATING CONDITIONS Symbol VDD Description Supply Voltage 1.8 V 2.5 V 3.3 V Min Max Unit 1.7 2.3 3.0 1.9 2.7 3.6 V 0 70 °C TA Operating Temperature (Ambient Temperature) CL Load Capacitance 15 pF CIN Input Capacitance 7 pF Table 3. ABSOLUTE MAXIMUM RATING Symbol VDD, VIN TSTG Description Rating Unit Voltage on any input pin with respect to Ground −0.5 to +4.6 V Storage temperature −65 to +125 °C Ts Max. Soldering Temperature (10 sec) 260 °C TJ Junction Temperature 150 °C 2 KV TDV Static Discharge Voltage (As per JEDEC STD22− A114−B) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect device reliability. http://onsemi.com 2 P3P8220A/AH Table 4. ELECTRICAL CHARACTERISTICS Symbol Min Typ Max Unit 1.7 1.8 1.9 V VDD(2.5V) 2.3 2.5 2.7 VDD(3.3V) 3 3.3 3.6 VDD(1.8V) Parameter Test Conditions Supply Voltage VIL Input LOW Voltage VIH Input HIGH Voltage VOL Output LOW Voltage 0.65*VDD P3P8220A VDD(1.8V), IOL = 4mA 0.35*VDD V VDD+0.3 V 0.25*VDD V VDD(2.5V, 3.3V), IOL = 8mA P3P8220AH VDD(1.8V), IOL = 6mA VDD(2.5V, 3.3V), IOL = 12mA VOH Output HIGH Voltage P3P8220A VDD(1.8V), IOL = -4mA 0.75*VDD V VDD(2.5V, 3.3V), IOL = -8mA P3P8220AH VDD(1.8V), IOL =- 6mA VDD(2.5V, 3.3V), IOL = -12mA ICC IDD Static Supply Current Dynamic Supply Current CLKIN pulled LOW VDD(1.8V) 1.3 VDD(2.5V) 1.5 VDD(3.3V) 1.7 15 MHz 2.3 60 MHz 6.0 15 MHz 3.2 60 MHz 8.0 15 MHz 4.5 60 MHz 12 VDD(1.8V) VDD(2.5V) VDD(3.3V) CL Load Capacitance Z0 Output Impedance 15 VDD(1.8V) P3P8220A 50 P3P8220AH 30 VDD(2.5V) P3P8220A 36 P3P8220AH 24 P3P8220A 30 P3P8220AH 20 VDD(3.3V) http://onsemi.com 3 mA mA pF W P3P8220A/AH Table 5. SWITCHING CHARACTERISTICS Max Unit Input Frequency Parameter 60 MHz ModOUT 60 Output Rise Time (Notes 1 & 2) Test Conditions Measured between 20% to 80% VDD(1.8V) VDD(2.5V) VDD(3.3V) Output Fall Time (Notes 1 & 2) Measured between 20% to 80% VDD(1.8V) VDD(2.5V) VDD(3.3V) Output Duty Cycle (Notes 1, 2 & 3) Measured at VDD/2 Cycle-to-Cycle Jitter (Note 1) Unloaded spreaded output VDD(1.8V) VDD(3.3V) Unloaded spreaded output 3.0 5.0 P3P8220AH 2.0 4.0 P3P8220A 1.8 3.0 P3P8220AH 1.2 2.5 P3P8220A 1.4 2.5 P3P8220AH 1.0 1.6 P3P8220A 2.4 4.0 P3P8220AH 1.6 3.0 P3P8220A 1.8 3.0 P3P8220AH 1.2 2.0 P3P8220A 1.4 2.0 P3P8220AH 1.0 1.6 50 55 15 MHz ±350 60 MHz ±200 15 MHz ±500 60 MHz ±150 15 MHz ±750 60 MHz ±200 7.5 VDD(2.5V) 7.5 VDD(3.3V) 7.5 http://onsemi.com ns % ps VDD(1.8V) 1. Parameter is guaranteed by design and characterization. Not 100% tested in production. 2. All parameters are specified with 15 pF loaded outputs. 3. For an input Duty Cycle (typ) of 50%. 4 Typ P3P8220A 45 VDD(2.5V) Maximum Input-Output Delay (Notes 1 & 2) Min ns P3P8220A/AH SWITCHING WAVEFORMS t1 t2 VDD/2 VDD/2 VDD/2 OUTPUT Figure 2. Duty Cycle Timing 80% 80% 20% 20% OUTPUT t3 t4 Figure 3. Output Rise/Fall Time Figure 4. Input − Output Propagation Delay VDDIN C1 R 0.1 mF Optional Noise Reduction Filter C2 2.2 mF 8 VDD CLKIN 1 CLKIN ModOUT 5 Rs P3P8220A/AH NC 2, 3, 6, 7 GND 4 NOTE: Refer Pin Description table for Functionality details. Figure 5. Typical Application Circuit NOTE: Device to Device variation of Tskew and I/O delay is $20%. http://onsemi.com 5 ModOUT Cloc k P3P8220A/AH ORDERING INFORMATION Ordering Code P3P8220AG−08CR Marking Temperature Package Type Shipping† GH 0°C to +70°C 8−pin (2 mm x 2 mm) WDFN (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *A “microdot” placed at the end of last row of marking or just below the last row toward the center of package indicates Pb−Free. http://onsemi.com 6 P3P8220A/AH PACKAGE DIMENSIONS WDFN8 2x2, 0.5P CASE 511AQ−01 ISSUE A D PIN ONE REFERENCE 2X A B L1 ÍÍÍ ÍÍÍ ÍÍÍ DETAIL A E OPTIONAL CONSTRUCTIONS 0.10 C 2X 0.10 C ÉÉ ÉÉ TOP VIEW EXPOSED Cu A3 DETAIL B 0.05 C 0.05 C MOLD CMPD OPTIONAL CONSTRUCTION C MILLIMETERS MIN MAX 0.80 0.70 0.05 0.00 0.20 REF 0.20 0.30 2.00 BSC 2.00 BSC 0.50 BSC 0.50 0.60 --0.15 RECOMMENDED SOLDERING FOOTPRINT* A1 SIDE VIEW DIM A A1 A3 b D E e L L1 DETAIL B A 8X SEATING PLANE 7X 0.78 PACKAGE OUTLINE DETAIL A 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM TERMINAL. L L 8X 4 L 2.30 0.88 8 5 e/2 e 8X b 0.10 C A 0.05 C 8X 1 0.35 B 0.50 PITCH DIMENSIONS: MILLIMETERS NOTE 3 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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