Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Complementary to 2SD2469 Unit: mm 4.6±0.2 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –15 A Collector current IC –7 A Collector power TC=25°C dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO VCB = –100V, IE = 0 Emitter cutoff current IEBO VEB = –5V, IC = 0 Collector to emitter voltage VCEO IC = –10mA, IB = 0 –80 hFE1 VCE = –2V, IC = – 0.1A 45 hFE2* VCE = –2V, IC = –3A 90 Forward current transfer ratio 2.6±0.1 1.2±0.15 1.45±0.15 W 2 ■ Electrical Characteristics 15.0±0.3 ● 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip ● Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw +0.5 ● 13.7–0.2 ● φ3.2±0.1 3.0±0.2 ■ Features 9.9±0.3 typ max Unit –10 µA –50 µA V 260 Collector to emitter saturation voltage VCE(sat) IC = –5A, IB = – 0.25A – 0.5 V Base to emitter saturation voltage VBE(sat) IC = –5A, IB = – 0.25A –1.5 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE2 IC = –3A, IB1 = – 0.3A, IB2 = 0.3A 30 MHz 0.5 µs 1.5 µs 0.1 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SB1607 PC — Ta IC — VCE VCE(sat) — IC –100 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 40 30 (1) 20 10 TC=25˚C IB=–120mA –110mA –100mA –90mA –80mA –70mA –8 –60mA –6 –40mA –30mA –4 –10mA 0 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –6 –25˚C 25˚C –8 –10 –10 TC=–25˚C 100˚C 25˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 300 TC=100˚C 100 –25˚C 30 10 3 –1 –3 –10 –30 10 3 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V TC=25˚C 10 –30 3 1 tstg 0.3 0.1 –10 –10 –3 Non repetitive pulse TC=25˚C ICP t=0.5ms IC 1ms 10ms –1 DC – 0.1 – 0.03 0.01 Collector to base voltage VCB (V) –3 – 0.3 ton tf 0.03 –100 –1 Area of safe operation (ASO) Collector current IC (A) 30 –30 10 –100 30 Switching time ton,tstg,tf (µs) 100 –10 30 Collector current IC (A) ton, tstg, tf — IC 300 –3 100 1 – 0.01 – 0.03 – 0.1 – 0.3 –100 100 –1 300 3 Cob — VCB 1000 –100 1000 25˚C Collector current IC (A) 10000 –30 VCE=–10V f=10MHz TC=25˚C 3000 1 – 0.1 – 0.3 –10 IE=0 f=1MHz TC=25˚C –10 VCE=–2V 3000 Collector current IC (A) 3000 –3 fT — IC 1000 –3 –1 Collector current IC (A) Transition frequency fT (MHz) –30 –1 – 0.01 – 0.1 – 0.3 10000 IC/IB=20 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) TC=100˚C hFE — IC – 0.1 Collector output capacitance Cob (pF) –4 10000 – 0.3 2 –1 Collector to emitter voltage VCE (V) VBE(sat) — IC –100 1 – 0.1 – 0.3 –3 – 0.03 0 20 –10 – 0.1 (4) 0 IC/IB=20 –30 – 0.3 –20mA –2 (2) (3) Collector to emitter saturation voltage VCE(sat) (V) –10 Collector current IC (A) Collector power dissipation PC (W) 50 0 –2 –4 –6 Collector current IC (A) –8 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB1607 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3