Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit: mm ■ Features ● ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 10 A Collector current IC 5 A Base current IB 1 A Collector power TC=25°C Ta=25°C dissipation 40 PC Junction temperature Tj Storage temperature Tstg 3.0±0.5 2.9±0.2 φ3.2±0.1 1.4±0.2 2.6±0.1 1.6±0.2 0.8±0.1 1 2 0.55±0.15 2.54±0.3 3 5.08±0.5 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package W 2.0 ■ Electrical Characteristics 15.0±0.5 ● 4.6±0.2 9.9±0.3 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 13.7±0.2 4.2±0.2 ● 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 80V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 25mA, IB = 0 60 Forward current transfer ratio hFE* VCE = 4V, IC = 1A 500 Collector to emitter saturation voltage VCE(sat) IC = 4A, IB = 0.1A Transition frequency fT VCE = 12V, IC = 0.4A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE IC = 4A, IB1 = 0.08A, IB2 = – 0.08A, VCC = 50V V 2000 0.3 V 30 MHz 0.4 µs 2.0 µs 0.6 µs Rank classification Rank hFE P Q 800 to 2000 500 to 1200 1 Power Transistors 2SD2528 30 20 (2) 10 TC=25˚C 6 (3) (4) IB=10mA 5 4 3mA 3 2mA 2 1 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 VBE(sat) — IC 8 10 12 1 10–1 10–2 10–3 10–1 1 10 Collector current IC (A) hFE — IC fT — IC 104 300 10 1 10–1 10–2 10–1 1 Transition frequency fT (MHz) IC/IB=50 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 6 10 Collector to emitter voltage VCE (V) 102 103 102 10 10–2 10 Collector current IC (A) tstg 3 tf 1 10 ton 0.3 0.1 ICP 10 t=1ms IC 10ms 3 1s 1 0.3 0.1 0.03 Non repetitive pulse TC=25˚C 0.01 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 VCE=12V f=10MHz TC=25˚C 100 30 10 3 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) 30 Collector current IC (A) 10 1 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=50 (IB1=–IB2) VCC=50V TC=25˚C 30 10–1 Collector current IC (A) ton, tstg, tf — IC 100 Switching time ton,tstg,tf (µs) 9mA 8mA 7mA 6mA 5mA 4mA 1mA 0 2 VCE(sat) — IC 7 Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (1) 40 IC — VCE 8 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 50 100 Collector to emitter voltage VCE (V) 3