NGTB40N120FL2WA D

NGTB40N120FL2WAG
IGBT - Field Stop II / 4 Lead
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. In addition, this new
device is packaged in a TO−247−4L package that provides significant
reduction in Eon Losses compared to standard TO−247−3L package.
The IGBT is well suited for UPS and solar applications. Incorporated
into the device is a soft and fast co−packaged free wheeling diode with
a low forward voltage.
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40 A, 1200 V
VCEsat = 2.1 V
Eon = 1.7 mJ
Features
•
•
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO−247−4L for Minimal Eon Losses
Optimized for High Speed Switching
These are Pb−Free Devices
C
G
E1
E
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Neutral Point Clamp Topology
C
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Collector−emitter voltage
Rating
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
A
ICM
160
A
IF
A
40N120FL2
AYWWG
160
40
IFM
160
A
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
$20
±30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
W
536
268
Operating junction temperature range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
May, 2016 − Rev. 0
MARKING DIAGRAM
160
40
Diode pulsed current, Tpulse limited
by TJmax
© Semiconductor Components Industries, LLC, 2016
TO−247
CASE 340AR
4 LEAD
E
E1 G
1
40N120FL2 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N120FL2WAG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB40N120FL2WA/D
NGTB40N120FL2WAG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
RqJC
0.28
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.50
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
Thermal resistance junction−to−case, for IGBT
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
−
−
2.1
2.4
2.4
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
VGE = VCE, IC = 400 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
4.0
0.4
−
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
7500
−
pF
Coes
−
136
−
Cres
−
230
−
Qg
−
313
−
Qge
−
61
−
Qgc
−
151
−
td(on)
−
30
−
tr
−
33
−
td(off)
−
145
−
tf
−
95
−
Eon
−
1.7
−
Turn−off switching loss
Eoff
−
1.1
−
Total switching loss
Ets
−
2.8
−
Turn−on delay time
td(on)
−
28
−
Gate−emitter threshold voltage
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 40 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15V
Rise time
Turn−off delay time
Fall time
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15 V
tr
−
37
−
td(off)
−
165
−
ns
mJ
ns
tf
−
195
−
Eon
−
2.5
−
Turn−off switching loss
Eoff
−
2.5
−
Total switching loss
Ets
−
5.0
−
VF
−
−
2.00
2.30
2.40
−
V
trr
−
240
−
ns
mc
Turn−on switching loss
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 175°C
TJ = 25°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
TJ = 175°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
Qrr
−
2.5
−
Irrm
−
18
−
A
trr
−
392
−
ns
Qrr
−
5.4
−
mc
Irrm
−
26
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NGTB40N120FL2WAG
TYPICAL CHARACTERISTICS
160
160
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
VGE = 20 V − 15 V
VGE = 20 V − 13 V
TJ = 25°C
140
120
100
11 V
80
60
10 V
40
9V
20
7V
8V
0
1
2
3
4
5
6
TJ = 150°C
100
11 V
80
60
10 V
40
9V
20
8V
7V
0
8
7
1
2
6
7
Figure 2. Output Characteristics
IC, COLLECTOR CURRENT (A)
100
11 V
80
60
10 V
40
9V
7 V and 8 V
20
0
1
2
3
4
5
6
7
13 V
140
120
TJ = 175°C
100
11 V
80
10 V
60
40
9V
20
8V
7V
0
0
8
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
100
80
60
40
20
TJ = 175°C
TJ = 25°C
0
2
4
6
8
10
12
14
16
8
VGE = 20 V − 15 V
TJ = −55°C
120
0
5
Figure 1. Output Characteristics
160
0
4
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE =
20 V − 13 V
140
3
VCE, COLLECTOR−EMITTER VOLTAGE (V)
160
IC, COLLECTOR CURRENT (A)
120
0
0
IC, COLLECTOR CURRENT (A)
13 V
140
18
4.0
3.5
IC = 75 A
3.0
IC = 40 A
2.5
2.0
IC = 20 A
1.5
1.0
−75 −50 −25
0
25
50
75 100 125 150 175 200
VGE, GATE−EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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3
8
NGTB40N120FL2WAG
TYPICAL CHARACTERISTICS
100
1M
TJ = 25°C
IF, FORWARD CURRENT (A)
CAPACITANCE (pF)
100K
Cies
10K
1K
Coes
100
TJ = 25°C
90
Cres
TJ = 175°C
80
70
60
50
40
30
20
10
0
10
10
30
20
40
50
60
70
80
90
0
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5 5.0
VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
16
2.50
14
2.25
12
10
8
6
VCE = 600 V
VGE = 15 V
IC = 40 A
4
2
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
2.00
Eon
1.75
1.50
Eoff
1.25
1.00
0.75
0
0.50
0
50
100
150
200
250
300
350
0
20
40
60
80
100 120 140 160 180 200
QG, GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
1000
5.0
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
SWITCHING LOSS (mJ)
4.5
SWITCHING TIME (ns)
0.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
0
td(off)
100
tf
tr
td(on)
10
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
1
0
20
40
4.0
3.5
Eoff
Eon
3.0
2.5
2.0
1.5
1.0
0.5
0
60
80
100 120 140 160 180 200
10
20
30
40
50
60
70
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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80
90
NGTB40N120FL2WAG
TYPICAL CHARACTERISTICS
14
tf
td(off)
100
tr
td(on)
10
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
1
10
20
10
6
4
Eoff
2
0
30
40
50
60
70
80
90
0
10
20
30
40
50
60
IC, COLLECTOR CURRENT (A)
RG, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG
70
4.0
SWITCHING LOSS (mJ)
tf
td(on)
100
VGE = 15 V
TJ = 175°C
IC = 40 A
Rg = 10 W
3.5
td(off)
tr
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 40 A
10
3.0
Eon
2.5
Eoff
2.0
1.5
1.0
0.5
0
10
20
30
40
50
60
350 400
70
500
550
600
650
700
750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
1000
1000
VGE = 15 V
TJ = 175°C
IC = 40 A
Rg = 10 W
tf
td(off)
100
450
RG, GATE RESISTOR (W)
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
Eon
8
1000
SWITCHING TIME (ns)
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 40 A
12
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
1000
tr
td(on)
10
100
dc operation
50 ms
10
100 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
1 ms
0.1
350 400
450
500
550
600
650
700
750 800
1
10
100
1K
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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5
10K
NGTB40N120FL2WAG
TYPICAL CHARACTERISTICS
450
trr, REVERSE RECOVERY TIME (ns)
IC, COLLECTOR CURRENT (A)
1000
100
10
VGE = 15 V, TC = 175°C
1
350
TJ = 175°C, IF = 40 A
300
250
200
TJ = 25°C, IF = 40 A
150
100
50
0
1
10
100
1K
10K
100
300
500
700
900
1100
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt
Irm, REVERSE RECOVERY CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
6
TJ = 175°C, IF = 40 A
5
4
TJ = 25°C, IF = 40 A
3
2
1
VR = 400 V
0
100
300
500
700
900
1300
1100
VR = 400 V
60
TJ = 175°C, IF = 40 A
50
40
TJ = 25°C, IF = 40 A
30
20
10
0
100
300
500
700
900
1100
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 21. Qrr vs. diF/dt
Figure 22. Irm vs. diF/dt
3.5
IF = 75 A
3.0
2.5
IF = 40 A
2.0
IF = 20 A
1.5
1.0
−75 −50 −25
0
25
75 100 125 150 175 200
50
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. VF vs. TJ
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1300
70
diF/dt, DIODE CURRENT SLOPE (A/ms)
VF, FORWARD VOLTAGE (V)
Qrr, REVERSE RECOVERY CHARGE (mC)
VR = 400 V
400
1300
NGTB40N120FL2WAG
TYPICAL CHARACTERISTICS
180
Ramp, TC = 110°C
160
140
Ipk (A)
120
Square, TC = 80°C
Ramp, TC = 80°C
100
80
Square, TC = 110°C
60
40
20
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 0.28
50% Duty Cycle
0.1 20%
10%
5%
0.01 2%
Junction R1
R2
Rn
C1
C2
Cn
0.001
0.000001
0.00001
Ri (°C/W) Ci (J/W)
0.0000
0.0000
0.0536
0.0059
0.0340
0.0294
0.0558
0.0567
0.1059
0.0944
0.0262
1.2083
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
Case
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 25. IGBT Transient Thermal Impedance
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 0.50
50% Duty Cycle
0.1
20%
10%
5%
2%
Junction R1
R2
Rn
C1
C2
Cn
Case
0.01
Single Pulse
Ri (°C/W) Ci (J/W)
0.000058
0.000427
0.001260
0.001363
0.003395
0.022881
0.052571
0.078312
0.128193
1.422617
0.017265
0.023397
0.025095
0.073345
0.093146
0.043705
0.060153
0.127694
0.246682
0.070293
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
Figure 26. Diode Transient Thermal Impedance
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7
0.1
1
NGTB40N120FL2WAG
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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8
NGTB40N120FL2WAG
Figure 29. Definition of Turn Off Waveform
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NGTB40N120FL2WAG
PACKAGE DIMENSIONS
TO−247 4−LEAD
CASE 340AR
ISSUE O
NOTE 3
A
P
E
B
0.635
M
B A
SEATING
PLANE
A
M
E1
NOTE 7
Q
S
E2
D
D1
NOTE 3
NOTE 6
1
2 3 4
L1
DIM
A
A1
b
b2
c
D
D1
E
E1
E2
e
L
L1
P
P1
Q
S
NOTE 4
L
4X
b2
2X
c
e
4X
e
b
0.25
A1
NOTE 5
M
B A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMEN­
SIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
4. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.
5. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.
6. NOTCHES ARE REQUIRED BUT THEIR SHAPE IS OPTIONAL.
∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 3.5° TO
P1 7. DIAMETER
THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 4.20.
M
MILLIMETERS
MIN
MAX
4.83
5.21
2.29
2.54
1.10
1.30
1.30
1.50
0.50
0.70
20.80
21.10
16.25
17.65
15.75
16.13
13.06
13.46
4.32
4.83
2.54 BSC
19.90
20.30
4.00
4.40
3.50
3.70
7.00
7.40
5.59
6.20
6.15 BSC
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