NGTB50N65FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 50 A, 650 V VCEsat = 1.8 V Eon = 0.48 mJ Features • • • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO−247−4L for Minimal Eon Losses Optimized for High Speed Switching This is a Pb−Free Device C G E1 Typical Applications E • Solar Inverters • Uninterruptible Power Supplies (UPS) • Neutral Point Clamp Topology ABSOLUTE MAXIMUM RATINGS Rating Symbol Collector−emitter voltage VCES Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF Value Unit 650 V 160 50 TO−247 CASE 340AR 4 LEAD G MARKING DIAGRAM A 160 50 IFM 160 A Pulsed collector current, Tpulse limited by TJmax ICM 160 A Gate−emitter voltage VGE $20 V 50N65FL2 AYWWG $30 Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C W 417 208 50N65FL2 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. May, 2016 − Rev. 0 E E1 A Diode Pulsed Current TPULSE Limited by TJ Max © Semiconductor Components Industries, LLC, 2016 C 1 Device Package Shipping NGTB50N65FL2WAG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB50N65FL2WA/D NGTB50N65FL2WAG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.36 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.62 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 650 − − V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 175°C VCEsat − − 1.80 2.17 2.00 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 650 V, TJ = 175°C ICES − − − 5.5 0.3 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 5160 − pF Coes − 244 − Cres − 141 − Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 50 A, VGE = 15 V Gate to collector charge Qg − 215 − Qge − 48 − Qgc − 116 − td(on) − 23 − tr − 35 − td(off) − 123 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 15 V tf − 54 − Eon − 0.48 − Eoff − 0.58 − Total switching loss Ets − 1.06 − Turn−on delay time td(on) − 22 − tr − 38 − td(off) − 130 − tf − 93 − Eon − 1.0 − Turn−off switching loss Eoff − 0.62 − Total switching loss Ets − 1.62 − VF − − 2.10 2.20 2.60 − Turn−on switching loss Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 175°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 15 V ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 50 A VGE = 0 V, IF = 50 A, TJ = 175°C TJ = 25°C IF = 50 A, VR = 400 V diF/dt = 200 A/ms TJ = 175°C IF = 50 A, VR = 400 V diF/dt = 200 A/ms V trr − 94 − ns Qrr − 0.36 − mC Irrm − 6.5 − A trr − 170 − ns Qrr − 1.40 − mC Irrm − 13 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB50N65FL2WAG TYPICAL CHARACTERISTICS 160 160 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 140 13 V 120 100 80 11 V 60 10 V 40 7V 20 9V 8V 160 1 2 3 4 5 6 120 13 V TJ = 150°C 100 80 11 V 60 10 V 40 7V 9V 8V 20 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics 160 13 V 100 TJ = −55°C 80 11 V 60 40 10 V 20 9V 7 V and 8 V 0 1 2 3 4 5 6 7 VGE = 20 V − 17 V 120 TJ = 175°C 13 V 100 80 11 V 60 10 V 40 7V 9V 8V 20 0 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 25°C 140 120 TJ = 150°C 100 80 60 40 20 0 2 4 6 8 10 12 14 16 8 15 V 140 8 160 0 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) 120 0 1 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V − 15 V 140 0 8 7 IC, COLLECTOR CURRENT (A) 0 IC, COLLECTOR CURRENT (A) 15 V 140 0 0 IC, COLLECTOR CURRENT (A) VGE = 20 V − 17 V VGE = 20 V − 15 V TJ = 25°C 18 3.0 2.8 IC = 75 A 2.6 2.4 2.2 IC = 50 A 2.0 1.8 IC = 25 A 1.6 1.4 1.2 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 3 8 NGTB50N65FL2WAG TYPICAL CHARACTERISTICS 100 Cies TJ = 25°C 1000 Coes 100 TJ = 25°C 90 IF, FORWARD CURRENT (A) CAPACITANCE (pF) 10,000 Cres TJ = 150°C 80 70 60 50 40 30 20 10 10 0 0 10 30 20 40 50 60 70 80 90 100 0 1.5 2.0 2.5 3.0 VF, FORWARD VOLTAGE (V) Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics 3.5 1.0 18 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 0.9 16 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 1.0 VCE, COLLECTOR−EMITTER VOLTAGE (V) 20 14 12 10 8 6 VCE = 480 V VGE = 15 V IC = 50 A 4 2 0 0.8 Eoff 0.7 0.6 Eon 0.5 0.4 0.3 0 50 100 150 200 0 250 20 40 60 80 100 120 140 160 180 200 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 1000 1.8 VCE = 400 V VGE = 15 V TJ = 175°C Rg = 10 W SWITCHING LOSS (mJ) 1.6 SWITCHING LOSS (mJ) 0.5 td(off) 100 tf tr td(on) 10 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 1 0 25 50 1.4 Eoff 1.2 1.0 Eon 0.8 0.6 0.4 0.2 0 75 100 125 150 175 200 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 4 80 90 NGTB50N65FL2WAG TYPICAL CHARACTERISTICS 8 1000 VCE = 400 V VGE = 15 V TJ = 175°C IC = 50 A SWITCHING LOSS (mJ) SWITCHING TIME (ns) 7 td(off) 100 tf tr td(on) 10 VCE = 400 V VGE = 15 V TJ = 175°C Rg = 10 W 1 10 20 6 5 4 3 2 Eoff 1 0 30 40 50 60 70 80 90 0 30 40 50 60 Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG 70 1.6 SWITCHING LOSS (mJ) td(off) VGE = 15 V TJ = 175°C IC = 50 A Rg = 10 W tf 100 tr VCE = 400 V VGE = 15 V TJ = 175°C IC = 50 A td(on) 10 1.2 Eoff 1.0 0.8 0.6 Eon 0.4 0.2 0 0 10 20 30 40 50 60 150 200 70 250 300 350 400 450 500 550 600 RG, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE 1000 VGE = 15 V TJ = 175°C IC = 50 A Rg = 10 W IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 20 RG, GATE RESISTOR (W) 1.4 SWITCHING TIME (ns) 10 IC, COLLECTOR CURRENT (A) 1000 1000 Eon td(off) 100 tf tr td(on) 10 100 50 ms 10 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 1 ms dc operation 0.1 150 200 250 300 350 400 450 500 550 600 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 5 1000 NGTB50N65FL2WAG TYPICAL CHARACTERISTICS 160 trr, REVERSE RECOVERY TIME (ns) IC, COLLECTOR CURRENT (A) 1000 100 10 VGE = 15 V, TC = 175°C 1 VR = 400 V 140 120 100 80 TJ = 25°C, IF = 50 A 60 40 1 10 100 1000 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt Irm, REVERSE RECOVERY CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) 3.0 VR = 400 V 2.5 TJ = 175°C, IF = 50 A 2.0 1.5 1.0 TJ = 25°C, IF = 50 A 0.5 0 100 300 500 700 900 1100 TJ = 175°C, IF = 50 A VR = 400 V 30 20 TJ = 25°C, IF = 50 A 10 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt 3.00 2.75 IF = 75 A 2.50 2.25 IF = 50 A 2.00 1.75 IF = 25 A 1.50 1.25 1.00 −75 −50 −25 0 25 50 75 100 125 150 175 200 TJ, JUNCTION TEMPERATURE (°C) Figure 23. VF vs. TJ www.onsemi.com 6 1100 40 diF/dt, DIODE CURRENT SLOPE (A/ms) VF, FORWARD VOLTAGE (V) Qrr, REVERSE RECOVERY CHARGE (mC) TJ = 175°C, IF = 50 A 1100 NGTB50N65FL2WAG TYPICAL CHARACTERISTICS 175 Ramp, TC = 110°C 150 125 Ipk (A) Ramp, TC = 80°C 100 Square, TC = 80°C 75 Square, TC = 110°C 50 25 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 24. Collector Current vs. Switching Frequency R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.36 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% Junction R1 R2 Rn C1 C2 Cn 0.001 0.000001 0.00001 Ri (°C/W) Ci (J/W) 0.0379 0.0026 0.0351 0.0090 0.0301 0.0332 0.0880 0.0359 0.1360 0.0735 0.0292 1.0836 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 Case 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 25. IGBT Transient Thermal Impedance R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.62 50% Duty Cycle 0.1 20% 10% 5% 2% Junction R1 R2 Rn C1 C2 Cn Case 0.01 Single Pulse Ri (°C/W) Ci (J/W) 0.000125 0.000951 0.002753 0.003765 0.006647 0.009699 0.051480 0.152673 0.234748 0.654533 0.007994 0.010512 0.011485 0.026558 0.047571 0.103104 0.061427 0.065499 0.134709 0.152781 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.001 0.000001 0.00001 0.0001 0.001 PULSE TIME (sec) 0.01 Figure 26. Diode Transient Thermal Impedance www.onsemi.com 7 0.1 1 NGTB50N65FL2WAG Figure 27. Test Circuit for Switching Characteristics Figure 28. Definition of Turn On Waveform www.onsemi.com 8 NGTB50N65FL2WAG Figure 29. Definition of Turn Off Waveform www.onsemi.com 9 NGTB50N65FL2WAG PACKAGE DIMENSIONS TO−247 4−LEAD CASE 340AR ISSUE O NOTE 3 A P E B 0.635 M B A SEATING PLANE A M E1 NOTE 7 Q S E2 D D1 NOTE 3 NOTE 6 1 2 3 4 L1 DIM A A1 b b2 c D D1 E E1 E2 e L L1 P P1 Q S NOTE 4 L 4X b2 2X c e 4X e b 0.25 A1 NOTE 5 M B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMEN SIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 4. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 5. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. 6. NOTCHES ARE REQUIRED BUT THEIR SHAPE IS OPTIONAL. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 3.5° TO P1 7. DIAMETER THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 4.20. M MILLIMETERS MIN MAX 4.83 5.21 2.29 2.54 1.10 1.30 1.30 1.50 0.50 0.70 20.80 21.10 16.25 17.65 15.75 16.13 13.06 13.46 4.32 4.83 2.54 BSC 19.90 20.30 4.00 4.40 3.50 3.70 7.00 7.40 5.59 6.20 6.15 BSC ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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