NGTB75N65FL2WA D

NGTB75N65FL2WAG
IGBT - Field Stop II / 4 Lead
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. In addition, this new
device is packaged in a TO−247−4L package that provides significant
reduction in Eon Losses compared to standard TO−247−3L package.
The IGBT is well suited for UPS and solar applications. Incorporated
into the device is a soft and fast co−packaged free wheeling diode with
a low forward voltage.
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75 A, 650 V
VCEsat = 1.70 V
Eon = 0.61 mJ
Features
•
•
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO−247−4L for Minimal Eon Losses
Optimized for High Speed Switching
These are Pb−Free Devices
C
G
E1
Typical Applications
E
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Neutral Point Clamp Topology
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
650
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
MARKING DIAGRAM
A
200
75
IFM
200
A
Pulsed collector current, Tpulse
limited by TJmax
ICM
200
A
Gate−emitter voltage
VGE
$20
V
V
$30
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
W
536
268
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
May, 2016 − Rev. 0
TO−247
CASE 340AR
4 LEAD
E
E1 G
A
200
75
Diode Pulsed Current
TPULSE Limited by TJ Max
© Semiconductor Components Industries, LLC, 2016
C
1
75N65FL2
AYWWG
75N65FL2 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NGTB75N65FL2WAG
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB75N65FL2WA/D
NGTB75N65FL2WAG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.28
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.62
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
−
−
V
VGE = 15 V, IC = 75 A
VGE = 15 V, IC = 75 A, TJ = 175°C
VCEsat
1.50
−
1.70
2.30
2.00
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 650 V
VGE = 0 V, VCE = 650 V, TJ = 175°C
ICES
−
−
−
7.0
0.3
−
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
7200
−
pF
Coes
−
300
−
Cres
−
200
−
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 75 A, VGE = 15 V
Gate to collector charge
Qg
−
310
−
Qge
−
60
−
Qgc
−
160
−
td(on)
−
23
−
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
tr
−
50
−
td(off)
−
157
−
tf
−
55
−
Eon
−
0.61
−
Eoff
−
1.2
−
Total switching loss
Ets
−
1.81
−
Turn−on delay time
td(on)
−
28
−
tr
−
50
−
td(off)
−
172
−
tf
−
90
−
Eon
−
0.85
−
Turn−off switching loss
Eoff
−
1.8
−
Total switching loss
Ets
−
2.65
−
VF
1.50
−
2.30
2.50
2.90
−
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 75 A
Rg = 10 W
VGE = 15 V
Turn−off switching loss
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 175°C
VCC = 400 V, IC = 75 A
Rg = 10 W
VGE = 15 V
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 75 A
VGE = 0 V, IF = 75 A, TJ = 175°C
TJ = 25°C
IF = 75 A, VR = 200 V
diF/dt = 200 A/ms
TJ = 175°C
IF = 75 A, VR = 200 V
diF/dt = 200 A/ms
V
trr
−
90
−
ns
Qrr
−
0.40
−
mC
Irrm
−
7.0
−
A
trr
−
173
−
ns
Qrr
−
1.47
−
mC
Irrm
−
13
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NGTB75N65FL2WAG
TYPICAL CHARACTERISTICS
200
VGE =
20 V − 15 V
180
13 V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
200
160
140
TJ = 25°C
120
11 V
100
80
10 V
60
9V
40
7V
20
8V
0
1
2
3
4
5
6
140
TJ = 150°C
120
100
11 V
80
10 V
60
9V
40
7V
8V
20
8
7
0
4
5
6
200
IC, COLLECTOR CURRENT (A)
TJ = −55°C
11 V
120
100
80
10 V
60
40
9V
20
7 V and 8 V
0
1
2
3
4
5
6
7
VGE = 20 V − 15 V
180
160
13 V
140
TJ = 175°C
120
11 V
100
80
10 V
60
9V
40
7V
8V
20
0
0
8
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
200
180
160
140
120
100
80
60
40
TJ = 175°C
20
TJ = 25°C
0
2
4
6
8
10
12
14
8
7
Figure 2. Output Characteristics
140
0
3
Figure 1. Output Characteristics
160
0
2
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE =
20 V − 13 V
180
1
VCE, COLLECTOR−EMITTER VOLTAGE (V)
200
IC, COLLECTOR CURRENT (A)
13 V
160
0
0
IC, COLLECTOR CURRENT (A)
VGE = 20 V − 15 V
180
16
2.4
2.2
IC = 75 A
2.0
IC = 50 A
1.8
1.6
1.4
IC = 25 A
1.2
1.0
−75 −50 −25
0
25
50
75 100 125 150 175 200
VGE, GATE−EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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3
8
NGTB75N65FL2WAG
TYPICAL CHARACTERISTICS
100
100K
Cies
10K
1K
Coes
Cres
100
TJ = 25°C
90
IF, FORWARD CURRENT (A)
CAPACITANCE (pF)
TJ = 25°C
TJ = 175°C
80
70
60
50
40
30
20
10
0
10
10
30
20
40
50
60
70
80
90
0
100
1.0
1.5
2.0
2.5
3.0
3.5
VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
16
1.8
14
1.6
12
10
8
6
VCE = 480 V
VGE = 15 V
IC = 75 A
4
2
VCE = 400 V
VGE = 15 V
IC = 75 A
Rg = 10 W
1.4
4.0
Eoff
1.2
1.0
0.8
Eon
0.6
0
0.4
0
50
100
150
200
250
300
350
0
20
40
60
80
100 120 140 160 180 200
QG, GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
1000
6
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
0.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
0
td(off)
100
tf
tr
td(on)
10
VCE = 400 V
VGE = 15 V
IC = 75 A
Rg = 10 W
1
0
20
40
VCE = 400 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
5
Eoff
4
3
Eon
2
1
0
60
80
100 120 140 160 180 200
10
30
50
70
90
110
130
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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150
170
NGTB75N65FL2WAG
TYPICAL CHARACTERISTICS
12
td(off)
tf
100
tr
td(on)
10
VCE = 400 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
1
10
30
6
4
0
50
70
90
110
130
150
170
0
10
20
30
40
50
60
IC, COLLECTOR CURRENT (A)
RG, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG
70
3.0
SWITCHING LOSS (mJ)
tf
100
tr
VCE = 400 V
VGE = 15 V
TJ = 175°C
IC = 75 A
td(on)
10
VGE = 15 V
TJ = 175°C
IC = 75 A
Rg = 10 W
2.5
Eoff
2.0
Eon
1.5
1.0
0.5
0
0
10
20
30
40
50
60
150 200
70
250
300
350
400
450
500
550 600
RG, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
1000
VGE = 15 V
TJ = 175°C
IC = 75 A
Rg = 10 W
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
Eoff
2
td(off)
SWITCHING TIME (ns)
Eon
8
1000
1000
VCE = 400 V
VGE = 15 V
TJ = 175°C
IC = 75 A
10
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
1000
td(off)
tf
100
tr
td(on)
10
100
50 ms
10
100 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
1 ms
dc operation
0.1
150 200
250
300
350
400
450
500
550 600
1
10
100
1K
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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5
10K
NGTB75N65FL2WAG
TYPICAL CHARACTERISTICS
150
trr, REVERSE RECOVERY TIME (ns)
IC, COLLECTOR CURRENT (A)
1000
100
10
VGE = 15 V, TC = 175°C
1
130
TJ = 175°C, IF = 75 A
110
90
TJ = 25°C, IF = 75 A
70
50
1
10
100
1K
100
300
500
700
900
1100
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt
Irm, REVERSE RECOVERY CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
3.0
VR = 400 V
2.5
2.0
TJ = 175°C, IF = 75 A
1.5
TJ = 25°C, IF = 75 A
1.0
0.5
0
100
300
500
700
900
1300
1100
VR = 400 V
TJ = 175°C, IF = 75 A
40
30
TJ = 25°C, IF = 75 A
20
10
0
100
300
500
700
900
1100
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 21. Qrr vs. diF/dt
Figure 22. Irm vs. diF/dt
3.00
2.75
2.50
IF = 75 A
2.25
IF = 50 A
2.00
1.75
IF = 25 A
1.50
1.25
1.00
−75 −50 −25
0
25
75 100 125 150 175 200
50
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. VF vs. TJ
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1300
50
diF/dt, DIODE CURRENT SLOPE (A/ms)
VF, FORWARD VOLTAGE (V)
Qrr, REVERSE RECOVERY CHARGE (mC)
VR = 400 V
1300
NGTB75N65FL2WAG
TYPICAL CHARACTERISTICS
225
Ramp, TC = 110°C
200
Square, TC = 110°C
175
Ipk (A)
150
Ramp, TC = 80°C
125
Square, TC = 80°C
100
75
50
25
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 0.28
50% Duty Cycle
0.1 20%
10%
5%
0.01 2%
Junction R1
R2
Rn
C1
C2
Cn
0.001
0.000001
0.00001
Ri (°C/W) Ci (J/W)
0.0301
0.0033
0.0184
0.0172
0.0255
0.0392
0.0536
0.0590
0.1129
0.0886
0.0409
0.7735
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
Case
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 25. IGBT Transient Thermal Impedance
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 0.62
50% Duty Cycle
20%
0.1 10%
5%
2%
Junction R1
R2
Rn
C1
C2
Cn
Case
0.01
Single Pulse
Ri (°C/W) Ci (J/W)
0.000125
0.000951
0.002753
0.003765
0.006647
0.009699
0.051480
0.152673
0.234748
0.654533
0.007994
0.010512
0.011485
0.026558
0.047571
0.103104
0.061427
0.065499
0.134709
0.152781
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
Figure 26. Diode Transient Thermal Impedance
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7
0.1
1
NGTB75N65FL2WAG
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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8
NGTB75N65FL2WAG
Figure 29. Definition of Turn Off Waveform
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NGTB75N65FL2WAG
PACKAGE DIMENSIONS
TO−247 4−LEAD
CASE 340AR
ISSUE O
NOTE 3
A
P
E
B
0.635
M
B A
SEATING
PLANE
A
M
E1
NOTE 7
Q
S
E2
D
D1
NOTE 3
NOTE 6
1
2 3 4
L1
DIM
A
A1
b
b2
c
D
D1
E
E1
E2
e
L
L1
P
P1
Q
S
NOTE 4
L
4X
b2
2X
c
e
4X
e
b
0.25
A1
NOTE 5
M
B A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMEN­
SIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
4. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.
5. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.
6. NOTCHES ARE REQUIRED BUT THEIR SHAPE IS OPTIONAL.
∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 3.5° TO
P1 7. DIAMETER
THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 4.20.
M
MILLIMETERS
MIN
MAX
4.83
5.21
2.29
2.54
1.10
1.30
1.30
1.50
0.50
0.70
20.80
21.10
16.25
17.65
15.75
16.13
13.06
13.46
4.32
4.83
2.54 BSC
19.90
20.30
4.00
4.40
3.50
3.70
7.00
7.40
5.59
6.20
6.15 BSC
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