NGTG50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • • • • • Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices 50 A, 600 V VCEsat = 1.65 V C Typical Applications • Power Factor Correction • Solar Inverters • Uninterruptable Power Supply (UPS) G ABSOLUTE MAXIMUM RATINGS Rating E Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC A 100 50 Pulsed collector current, Tpulse limited by TJmax ICM 200 A Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage VGE $20 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C G C TO−247 CASE 340L STYLE 4 E MARKING DIAGRAM W 223 89 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. G50N60FL AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTG50N60FLWG © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 0 1 Package Shipping TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTG50N60FLW/D NGTG50N60FLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.56 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 25 A, TJ = 150°C VCEsat 1.40 − 1.65 1.85 1.90 − V VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.5 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7302 − pF Coes − 220 − Cres − 190 − Gate charge total Qg − 310 − Gate to emitter charge Qge − 60 − Qgc − 150 − td(on) − 116 − tr − 43 − td(off) − 292 − tf − 78 − Eon − 1.1 − Turn−off switching loss Eoff − 0.6 − Total switching loss Ets − 1.7 − Turn−on delay time td(on) − 110 − tr − 45 − td(off) − 300 − tf − 105 − Eon − 1.4 − Turn−off switching loss Eoff − 1.1 − Total switching loss Ets − 2.5 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 480 V, IC = 50 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V* Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V* *Includes diode reverse recovery loss using NGTB50N60FLWG. http://onsemi.com 2 ns mJ ns mJ NGTG50N60FLWG TYPICAL CHARACTERISTICS 300 TJ = 25°C VGE = 17 V to 13 V 200 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 250 11 V 150 10 V 100 9V 50 7V 0 0 8V 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) 250 11 V 150 10 V 100 9V 50 8V 7V 0 Figure 1. Output Characteristics VGE = 17 V to 13 V 11 V 150 10 V 100 7V 50 0 9V 8V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) 180 160 100 80 60 40 20 0 16 100000 IC = 100 A 10000 2.00 IC = 50 A 1.50 IC = 25 A 1.00 IC = 5 A CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 4 8 12 VGE, GATE−EMITTER VOLTAGE (V) Figure 4. Typical Transfer Characteristics 3.00 Cies 1000 Coes 100 Cres 0.50 0.00 −75 TJ = 150°C 120 0 8 TJ = 25°C 140 Figure 3. Output Characteristics 2.50 8 200 TJ = −55°C 200 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 2. Output Characteristics IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 250 VGE = 17 V to 13 V 200 0 8 TJ = 150°C −25 25 75 125 TJ, JUNCTION TEMPERATURE (°C) 175 10 0 Figure 5. VCE(sat) vs. TJ 10 20 30 40 50 60 70 80 90 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 6. Typical Capacitance http://onsemi.com 3 NGTG50N60FLWG TYPICAL CHARACTERISTICS VGE, GATE−EMITTER VOLTAGE (V) 20 15 VCE = 480 V 10 5 0 0 50 100 150 200 250 QG, GATE CHARGE (nC) 300 350 Figure 7. Typical Gate Charge 1.6 1000 td(off) Eon 1.2 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 1.4 1 Eoff 0.8 0.6 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 0.4 0.2 0 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) tf tr 10 1 160 td(on) 100 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 0 Figure 8. Switching Loss vs. Temperature VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W SWITCHING LOSS (mJ) 4 3.5 3 2.5 td(off) Eon 1.5 1 tf 100 td(on) tr 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 0.5 0 8 20 160 1000 Eoff 2 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Time vs. Temperature SWITCHING TIME (ns) 4.5 20 32 44 56 68 80 IC, COLLECTOR CURRENT (A) 92 1 104 8 Figure 10. Switching Loss vs. IC 20 32 44 56 68 80 IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. IC http://onsemi.com 4 92 104 NGTG50N60FLWG TYPICAL CHARACTERISTICS SWITCHING LOSS (mJ) 6 5 10000 VCE = 400 V VGE = 15 V IC = 50 A TJ = 150°C td(off) Eon SWITCHING TIME (ns) 7 4 Eoff 3 2 1000 td(on) 100 tf tr VCE = 400 V VGE = 15 V IC = 50 A TJ = 150°C 10 1 0 5 15 25 35 45 55 65 75 1 5 85 SWITCHING TIME (ns) SWITCHING LOSS (mJ) Eon 225 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) 85 225 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) 575 tf tr 10 1 175 575 VGE = 15 V IC = 50 A Rg = 10 W TJ = 150°C Figure 15. Switching Time vs. VCE 1000 1000 50 ms 100 dc operation IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 75 td(on) 100 Figure 14. Switching Loss vs. VCE 0.01 1 65 td(off) 0.6 0.1 55 1000 VGE = 15 V IC = 50 A Rg = 10 W TJ = 150°C 1.2 1 45 Figure 13. Switching Time vs. RG Eoff 10 35 Figure 12. Switching Loss vs. RG 1.8 0 175 25 RG, GATE RESISTOR (W) 3 2.4 15 RG, GATE RESISTOR (W) 100 ms 1 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) 100 10 1 1000 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 16. Safe Operating Area Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTG50N60FLWG TYPICAL CHARACTERISTICS 1 50% Duty Cycle RqJC = 0.56 20% R(t) (°C/W) 0.1 10% Junction R1 5% 1% C1 C2 Cn Ri (°C/W) Case 0.00001 ti (sec) 0.02087 0.05041 0.07919 0.11425 0.19393 1.0E−4 5.48E−5 0.002 0.03 0.1 0.09951 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Rn Ci = ti/Ri 2% 0.01 R2 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance Figure 19. Test Circuit for Switching Characteristics http://onsemi.com 6 10 100 1000 NGTG50N60FLWG Figure 20. Definition of Turn On Waveform http://onsemi.com 7 NGTG50N60FLWG Figure 21. Definition of Turn Off Waveform http://onsemi.com 8 NGTG50N60FLWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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