NVD4C05N Product Preview Power MOSFET 30 V, 4.1 mW, 90 A, Single N−Channel Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com RDS(on) V(BR)DSS 30 V Symbol D Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS "20 V ID 90 A Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2 & 3) Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C 64 PD TC = 100°C TA = 25°C Steady State Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL(pk) = 5.6 A, L = 10 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) S N−CHANNEL MOSFET 4 A 22 16 PD TA = 100°C TA = 25°C, tp = 10 ms W 57 28 ID TA = 100°C TA = 25°C G 1 2 W 3.5 3 1.7 IDM 270 A TJ, Tstg −55 to 175 °C IS 75 A EAS 157 mJ TL 260 °C DPAK CASE 369C STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain AYWW Continuous Drain Current RqJC (Notes 1 & 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter 90 A 6.0 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID 4.1 mW @ 10 V Symbol Value Unit Junction−to−Case (Drain) (Note 1) RqJC 2.65 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 43 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 4C05NG • • • • 2 1 Drain 3 Gate Source A Y WW 4C05N G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. P1 1 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: NVD4C05N/D NVD4C05N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS V 14.9 Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA VGS = 0 V, VDS = 24 V TJ = 25°C mV/°C 1.0 TJ = 125°C mA 10 ±100 nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 2.2 4.7 V mV/°C VGS = 10 V, ID = 45 A 3.4 4.1 VGS = 4.5 V, ID = 45 A 4.5 6.0 mW CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) pF 1970 VGS = 0 V, f = 1.0 MHz, VDS = 25 V 725 30 VGS = 10 V, VDS = 24 V, ID = 45 A 31 nC 14 nC 3.3 VGS = 4.5 V, VDS = 24 V, ID = 45 A Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 6.2 3.2 Plateau Voltage VGP 3.1 V Gate Resistance RG 1.0 W td(on) 11 ns tr 107 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VGS = 4.5 V, VDS = 24 V, ID = 45 A, RG = 0 W tf 17 6.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 45 A TJ = 25°C 0.9 TJ = 125°C 0.8 1.2 41 VGS = 0 V, dIs/dt = 100 A/ms, IS = 45 A QRR V ns 21 20 26 nC 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number NVD4C05NT4G Package Shipping† DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 NVD4C05N PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 D 1 2 Z Z H DETAIL A 3 L4 NOTE 7 b2 e b TOP VIEW c SIDE VIEW 0.005 (0.13) M BOTTOM VIEW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW ALTERNATE CONSTRUCTION C H L2 GAUGE PLANE C L L1 DETAIL A SEATING PLANE A1 ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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