MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG SWITCHMODE™ Power Rectifier 60 V, 30 A http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 60 VOLTS Features and Benefits • • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) Guard−Ring for Stress Protection These are Pb−Free Devices* 1 2, 4 3 4 I2PAK (TO−262) CASE 418D PLASTIC STYLE 3 Applications • Power Supply − Output Rectification • Power Management • Instrumentation 4 12 3 TO−220 CASE 221A PLASTIC STYLE 6 Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately): 1.5 Grams (I2PAK) • • Weight (Approximately): 1.9 Grams (TO−220 and TO−220FP) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 1 2 3 Please See the Table on the Following Page B30H60 A Y WW G AKA AYWW B30H60G AKA AYWW B30H60G AKA TO−220 CASE 221D STYLE 3 MAXIMUM RATINGS MARKING DIAGRAMS = Device Code = Assembly Location = Year = Work Week = Pb−Free Package = Polarity Designator AYWW B30H60G AKA ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 3 1 Device Package Shipping MBRB30H60CT−1G TO−262 (Pb−Free) 50 Units/Rail MBR30H60CTG TO−220 (Pb−Free) 50 Units/Rail MBRF30H60CTG TO−220FP (Pb−Free) 50 Units/Rail Publication Order Number: MBRB30H60CT−1/D MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 V Average Rectified Forward Current (Rated VR) TC = 159°C IF(AV) 15 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 30 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 260 A TJ −55 to +175 °C Storage Temperature Tstg *55 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms WAVAL 350 mJ > 400 > 8000 V Operating Junction Temperature (Note 1) Controlled Avalanche Energy (see test conditions in Figures 10 and 11) ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance (MBRB30H60CT−1G and MBR30H60CTG) − Junction−to−Case − Junction−to−Ambient (MBRF30H60CTG) − Junction−to−Case °C/W RqJC RqJA RqJC 2.0 70 2.5 ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 15 A, TC = 25°C) (IF = 15 A, TC = 125°C) (IF = 30 A, TC = 25°C) (IF = 30 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.62 0.56 0.78 0.71 mA 0.3 45 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG 100 TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100 TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.2 1.0E−02 1.0E−02 TJ = 125°C 1.0 1.2 TJ = 125°C 1.0E−03 1.0E−03 1.0E−04 1.0E−04 TJ = 25°C 1.0E−05 1.0E−06 0 10 20 30 40 50 60 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current dc SQUARE WAVE 15 10 5 110 1.0E−06 0 VR, REVERSE VOLTAGE (VOLTS) 30 25 TJ = 25°C 1.0E−05 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) 0.8 1.0E−01 IR, REVERSE CURRENT (AMPS) 1.0E−01 0 100 0.6 Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 20 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 120 130 140 150 160 170 180 20 18 16 14 SQUARE 12 10 DC 8 6 4 2 0 0 5 10 15 20 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 60 25 MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG 10,000 C, CAPACITANCE (pF) TJ = 25°C 1000 100 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (V) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 SINGLE PULSE 0.01 0.000001 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response Junction−to−Case for MBRB30H60CT−1G and MBR30H60CTG 10 D = 0.5 1 0.1 0.2 0.1 0.05 0.01 P(pk) t1 0.01 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 9. Thermal Response Junction−to−Case for MBRF30H60CTG http://onsemi.com 4 100 1000 MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH S1 ID ID IL DUT VDD t0 Figure 10. Test Circuit t1 t2 t Figure 11. Current−Voltage Waveforms elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The unclamped inductive switching circuit shown in Figure 10 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 5 Ǔ MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG PACKAGE DIMENSIONS I2PAK (TO−262) CASE 418D−01 ISSUE C C E V −B− 4 A W 1 2 3 F −T− SEATING PLANE K S J H 3 PL 0.13 (0.005) M T B INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 DIM A B C D E F G H J K S V W STYLE 3: PIN 1. 2. 3. 4. G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 ANODE CATHODE ANODE CATHODE TO−220 CASE 221A−09 ISSUE AD −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 6 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE H −T− −B− F SEATING PLANE C S Q U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D−01 THRU 221D−02 OBSOLETE, NEW STANDARD 221D−03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.625 0.635 0.408 0.418 0.180 0.190 0.026 0.031 0.116 0.119 0.100 BSC 0.125 0.135 0.018 0.025 0.530 0.540 0.048 0.053 0.200 BSC 0.124 0.128 0.099 0.103 0.101 0.113 0.238 0.258 MILLIMETERS MIN MAX 15.88 16.12 10.37 10.63 4.57 4.83 0.65 0.78 2.95 3.02 2.54 BSC 3.18 3.43 0.45 0.63 13.47 13.73 1.23 1.36 5.08 BSC 3.15 3.25 2.51 2.62 2.57 2.87 6.06 6.56 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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