MBRB30H60CT−1 SWITCHMODE™ Power Rectifier 60 V, 30 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) Guard−Ring for Stress Protection SCHOTTKY BARRIER RECTIFIER 30 AMPERES 60 VOLTS 1 Applications 2, 4 • Power Supply − Output Rectification • Power Management • Instrumentation 3 MARKING DIAGRAM 4 Mechanical Characteristics: • • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.5 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube This is a Pb−Free Device MAXIMUM RATINGS I2PAK (TO−262) CASE 418D PLASTIC AYWW B30H60G AKA 12 3 B30H60 A Y WW AKA G = Device Code = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Device Please See the Table on the Following Page ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 0 1 Device Package Shipping MBRB30H60CT−1G TO−262 (Pb−Free) 50 Units/Rail Publication Order Number: MBRB30H60CT−1/D MBRB30H60CT−1 MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 V Average Rectified Forward Current (Rated VR) TC = 159°C IF(AV) 15 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 30 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 260 A TJ −55 to +175 °C Storage Temperature Tstg *55 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms WAVAL 350 mJ > 400 > 8000 V 2.0 70 °C/W Operating Junction Temperature (Note 1) Controlled Avalanche Energy (see test conditions in Figures 9 and 10) ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance − Junction−to−Case − Junction−to−Ambient RqJC RqJA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 15 A, TC = 25°C) (IF = 15 A, TC = 125°C) (IF = 30 A, TC = 25°C) (IF = 30 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.62 0.56 0.78 0.71 mA 0.3 45 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRB30H60CT−1 100 TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100 TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.2 1.0E−02 1.0E−02 TJ = 125°C 1.0 1.2 TJ = 125°C 1.0E−03 1.0E−03 1.0E−04 1.0E−04 TJ = 25°C 1.0E−05 1.0E−06 0 10 20 30 40 50 60 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current dc SQUARE WAVE 15 10 5 110 1.0E−06 0 VR, REVERSE VOLTAGE (VOLTS) 30 25 TJ = 25°C 1.0E−05 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) 0.8 1.0E−01 IR, REVERSE CURRENT (AMPS) 1.0E−01 0 100 0.6 Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 20 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 120 130 140 150 160 170 180 20 18 16 14 SQUARE 12 10 DC 8 6 4 2 0 0 5 10 15 20 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 60 25 MBRB30H60CT−1 1000 C, CAPACITANCE (pF) TJ = 25°C 100 10 0 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 SINGLE PULSE 0.01 0.000001 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 8. Thermal Response Junction−to−Case http://onsemi.com 4 10 100 1000 MBRB30H60CT−1 +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH S1 ID ID IL DUT VDD t0 Figure 9. Test Circuit t1 t2 t Figure 10. Current−Voltage Waveforms elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 5 Ǔ MBRB30H60CT−1 PACKAGE DIMENSIONS I2PAK (TO−262) CASE 418D−01 ISSUE B C E V −B− 4 A W 1 2 3 F −T− SEATING PLANE K S J H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K S V W INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.88 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 G D 3 PL 0.13 (0.005) M T B M SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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