MBR30L45CTG, MBRF30L45CTG SWITCHMODE™ Power Rectifier 45 V, 30 A http://onsemi.com Features and Benefits • • • • • • DUAL SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 45 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) Guard−Ring for Stress Protection 1 2, 4 3 Applications • Power Supply − Output Rectification • Power Management • Instrumentation MARKING DIAGRAMS 4 Mechanical Characteristics: • • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube This is a Pb−Free Device* 1 TO−220 CASE 221A PLASTIC 2 AYWW B30L45G AKA 3 TO−220 CASE 221D STYLE 3 MAXIMUM RATINGS B30L45G YWW Please See the Table on the Following Page B30L45 A Y WW AKA G = Device Code = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Device ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 January, 2010 − Rev. 2 1 Package Shipping MBR30L45CTG TO−220 (Pb−Free) 50 Units/Rail MBRF30L45CTG TO−220FP (Pb−Free) 50 Units/Rail Publication Order Number: MBR30L45CT/D MBR30L45CTG, MBRF30L45CTG MAXIMUM RATINGS (Per Diode Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC = 137°C IF(AV) 15 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 30 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 190 A TJ −55 to +150 °C Storage Temperature Tstg *55 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms > 400 > 8000 V Operating Junction Temperature (Note 1) ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance (MBR30L45CTG) (MBRF30L45CTG) Junction−to−Case Junction−to−Ambient Junction−to−Case RqJC RqJA RqJC 1.9 45 2.2 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 15 A, TC = 25°C) (IF = 15 A, TC = 125°C) (IF = 30 A, TC = 25°C) (IF = 30 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.50 0.44 0.61 0.60 mA 0.65 250 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%. http://onsemi.com 2 MBR30L45CTG, MBRF30L45CTG TYPICAL CHARACTERISTICS 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 150°C 1 125°C 75°C 0.1 25°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 150°C 1 125°C 75°C 0.1 0.9 25°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1E+00 0.9 1E+00 150°C IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 150°C 1E−01 1E−01 125°C 125°C 1E−02 1E−02 75°C 1E−03 1E−03 1E−04 0 5 10 75°C 1E−04 25°C 15 20 25 30 35 40 45 50 1E−05 25°C 0 5 10 VR, REVERSE VOLTAGE (V) 15 20 30 35 40 45 Figure 4. Maximum Reverse Current 30 25 25 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current IF, AVERAGE FORWARD CURRENT (A) 1E−05 10 dc 20 Square Wave 15 10 5 0 100 105 110 115 120 125 130 135 140 145 150 155 TC, CASE TEMPERATURE (°C) Figure 5. Current Derating http://onsemi.com 3 50 MBR30L45CTG, MBRF30L45CTG 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10000 Square Wave C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) TYPICAL CHARACTERISTICS dc 0 5 10 15 20 25 1000 100 30 0 Io, AVERAGE FORWARD CURRENT (A) 10 15 20 25 30 35 40 45 VR, REVERSE VOLTAGE (V) Figure 6. Forward Power Dissipation R(t), TRANSIENT THERMAL RESISTANCE 5 Figure 7. Typical Capacitance 100 D = 0.5 10 0.2 0.1 1 0.05 P(pk) 0.01 t1 0.1 t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 DUTY CYCLE, D = t1/t2 0.001 0.1 0.01 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response Junction−to−Ambient for MBR30L45CTG 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 9. Thermal Response Junction−to−Case for MBR30L45CTG http://onsemi.com 4 100 1000 R(t), TRANSIENT THERMAL RESISTANCE MBR30L45CTG, MBRF30L45CTG 10 D = 0.5 1 0.1 0.2 0.1 0.05 0.01 P(pk) t1 0.01 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 10. Thermal Response Junction−to−Case for MBRF30L45CTG http://onsemi.com 5 100 1000 MBR30L45CTG, MBRF30L45CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF SEATING PLANE −T− B F C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q U DIM A B C D F G H J K L N Q R S U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. Y INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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