MBR20L45CTG, MBRF20L45CTG SWITCHMODE™ Power Rectifier 45 V, 20 A http://onsemi.com Features and Benefits • • • • • • DUAL SCHOTTKY BARRIER RECTIFIERS 20 AMPERES, 45 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) Guard−Ring for Stress Protection 1 2, 4 3 Applications • Power Supply − Output Rectification • Power Management • Instrumentation MARKING DIAGRAMS 4 Mechanical Characteristics: • • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube This is a Pb−Free Device* 1 TO−220 CASE 221A PLASTIC 2 AYWW B20L45G AKA 3 TO−220 CASE 221D STYLE 3 B20L45G YWW MAXIMUM RATINGS Please See the Table on the Following Page B20L45 A Y WW AKA G = Device Code = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Device ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 January, 2010 − Rev. 2 1 Package Shipping MBR20L45CTG TO−220 (Pb−Free) 50 Units/Rail MBRF20L45CTG TO−220FP (Pb−Free) 50 Units/Rail Publication Order Number: MBR20L45CT/D MBR20L45CTG, MBRF20L45CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC = 141°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 180 A TJ −55 to +150 °C Storage Temperature Tstg *55 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms > 400 > 8000 V Operating Junction Temperature (Note 1) ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance (MBR20L45CTG) (MBRF20L45CTG) Junction−to−Case Junction−to−Ambient Junction−to−Case RqJC RqJA RqJC 1.9 45 2.2 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.50 0.47 0.63 0.62 mA 0.5 170 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%. http://onsemi.com 2 MBR20L45CTG, MBRF20L45CTG TYPICAL CHARACTERISTICS 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 150°C 1 125°C 75°C 0.1 25°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.8 0.7 150°C 1 125°C 75°C 0.1 0.9 25°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1E+00 0.9 1E+00 150°C 150°C 1E−02 1E−01 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 1E−01 1E−02 125°C 1E−03 125°C 1E−03 75°C 1E−04 75°C 1E−04 1E−05 1E−05 25°C 0 5 10 15 20 25 30 35 40 45 50 1E−06 25°C 0 5 10 VR, REVERSE VOLTAGE (V) 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current IF, AVERAGE FORWARD CURRENT (A) 1E−06 10 Figure 4. Maximum Reverse Current 20 dc 15 Square Wave 10 5 0 100 105 110 115 120 125 130 135 140 145 150 155 TC, CASE TEMPERATURE (°C) Figure 5. Current Derating http://onsemi.com 3 45 50 MBR20L45CTG, MBRF20L45CTG TYPICAL CHARACTERISTICS 18 10000 Square Wave 14 C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) 16 12 10 dc 8 6 4 1000 2 R(t), TRANSIENT THERMAL RESISTANCE 0 0 5 10 100 20 15 0 5 10 15 20 25 30 35 Io, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 6. Forward Power Dissipation Figure 7. Typical Capacitance 40 45 100 D = 0.5 10 0.2 0.1 1 0.05 P(pk) 0.01 t1 0.1 t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 DUTY CYCLE, D = t1/t2 0.001 0.1 0.01 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response Junction−to−Ambient for MBR20L45CTG 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 9. Thermal Response Junction−to−Case for MBR20L45CTG http://onsemi.com 4 100 1000 R(t), TRANSIENT THERMAL RESISTANCE MBR20L45CTG, MBRF20L45CTG 10 D = 0.5 1 0.1 0.2 0.1 0.05 0.01 P(pk) t1 0.01 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 10. Thermal Response Junction−to−Case for MBRF20L45CTG http://onsemi.com 5 100 1000 MBR20L45CTG, MBRF20L45CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q U INCHES DIM MIN MAX A 0.617 0.635 B 0.392 0.419 C 0.177 0.193 D 0.024 0.039 F 0.116 0.129 G 0.100 BSC H 0.118 0.135 J 0.018 0.025 K 0.503 0.541 L 0.048 0.058 N 0.200 BSC Q 0.122 0.138 R 0.099 0.117 S 0.092 0.113 U 0.239 0.271 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. Y MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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