MBR40L60CTG Switch-mode Power Rectifier 60 V, 40 A Features and Benefits • • • • • • www.onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 40 A Total (20 A Per Diode Leg) Guard−Ring for Stress Protection This Device is Pb−Free and is RoHS Compliant SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 60 VOLTS 1 2, 4 Applications • Power Supply − Output Rectification • Power Management • Instrumentation 3 4 Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 1 2 3 TO−220 CASE 221A STYLE 6 MARKING DIAGRAM AYWW B40L60G AKA A Y WW B40L60 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 1 1 Publication Order Number: MBR40L60CT/D MBR40L60CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit VRRM VRWM VR 60 V IF(AV) 20 40 A IFSM 240 A Operating Junction Temperature (Note 1) TJ −55 to +150 °C Storage Temperature Tstg −65 to +175 °C > 400 > 8000 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 130°C (Per Leg) (Per Device) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value RqJC RqJA 1.8 70 Typ Max 0.56 0.53 0.75 0.69 0.61 0.58 0.81 0.74 210 95 550 175 Unit °C/W Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) (IF = 40 A, TC = 25°C) (IF = 40 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR Unit V mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Device Order Number MBR40L60CTG Package Type Shipping TO−220 (Pb−Free) 50 Units / Rail www.onsemi.com 2 MBR40L60CTG 100 IF, AVERAGE FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 125°C 10 150°C 85°C 1 TJ = 25°C 0.1 0 125°C 10 1 TJ = 25°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 85°C 150°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E+00 1.0E+00 125°C 1.0E−02 85°C 1.0E−03 125°C 1.0E−02 85°C 1.0E−03 TJ = 25°C 1.0E−05 1.0E−05 10 20 30 40 VR, REVERSE VOLTAGE (V) 50 60 1.0E−06 0 Figure 3. Typical Reverse Current 32 28 SQUARE WAVE 20 16 12 8 4 0 80 90 100 110 120 130 140 20 30 40 VR, REVERSE VOLTAGE (V) 50 60 6 RqJC = 1.8°C/W dc 10 Figure 4. Maximum Reverse Current IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 36 24 TJ = 25°C 1.0E−04 1.0E−04 1.0E−06 0 1.0E−01 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 150°C 150°C 1.0E−01 RqJA = 70°C/W 5 dc 4 3 SQUARE WAVE 2 1 0 0 150 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case per Leg Figure 6. Current Derating, Ambient per Leg www.onsemi.com 3 10000 40 TJ = 150°C 35 TJ = 25°C C, CAPACITANCE (pF) PF, AVERAGE POWER DISSIPATION (W) MBR40L60CTG 30 25 SQUARE WAVE 20 15 dc 10 1000 100 5 0 10 0 5 10 15 20 25 30 35 IO, AVERAGE FORWARD CURRENT (A) 40 0 10 20 Figure 7. Forward Power Dissipation R(t), TRANSIENT THERMAL RESISTANCE 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 8. Capacitance 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 DUTY CYCLE, D = t1/t2 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 9. Thermal Response Junction−to−Case for MBR40L60CT 100 D = 0.5 0.2 10 0.1 0.02 0.05 1 0.01 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 PULSE TIME (sec) Figure 10. Thermal Response Junction−to−Ambient for MBR40L60CT www.onsemi.com 4 100 1000 MBR40L60CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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