MCR8S D

MCR8SDG, MCR8SMG,
MCR8SNG
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
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Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
SCRs
8 AMPERES RMS
400 thru 800 VOLTS
Features
• Sensitive Gate Allows Triggering by Microcontrollers and other
•
•
•
•
•
•
•
•
G
Logic Circuits
Blocking Voltage to 800 V
On−State Current Rating of 8 A RMS at 80°C
High Surge Current Capability − 80 A
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
Immunity to dv/dt − 5 V/msec Minimum at 110°C
These are Pb−Free Devices*
A
MARKING
DIAGRAM
AY WW
MCR8SxG
AKA
1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
K
2
TO−220AB
CASE 221A−09
STYLE 3
3
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave,
50 to 60 Hz)
MCR8SDG
MCR8SMG
MCR8SNG
VDRM,
VRRM
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
IT(RMS)
8.0
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 110°C)
ITSM
80
A
Circuit Fusing Consideration (t = 8.33 ms)
I2t
26.5
A2sec
1
Cathode
PGM
5.0
W
2
Anode
3
Gate
4
Anode
Forward Peak Gate Power
(Pulse Width ≤ 10 ms, TC = 80°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
Value
Unit
A
Y
WW
x
G
AKA
V
400
600
800
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 10 ms, TC = 80°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to 110
°C
Storage Temperature Range
Tstg
−40 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
ORDERING INFORMATION
Device
Package
Shipping
MCR8SDG
TO−220AB
(Pb−Free)
50 Units / Rail
MCR8SMG
TO−220AB
(Pb−Free)
50 Units / Rail
MCR8SNG
TO−220AB
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 5
1
Publication Order Number:
MCR8S/D
MCR8SDG, MCR8SMG, MCR8SNG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
Value
Unit
RqJC
RqJA
2.2
62.5
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−
−
−
−
10
500
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VD = Rated VDRM and VRRM; RGK = 1 kW)
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2)
(ITM = 16 A)
VTM
−
−
1.8
V
Gate Trigger Current (Continuous dc) (Note 4)
(VD = 12 V; RL = 100 W)
IGT
5.0
25
200
mA
Holding Current (Note 3)
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
IH
−
0.5
6.0
mA
Latch Current (Note 4)
(VD = 12 V, IG = 200 mA)
IL
−
0.6
8.0
mA
Gate Trigger Voltage (Continuous dc) (Note 4)
(VD = 12 V; RL = 100 W)
TJ = 25°C
TJ = *40°C
VGT
0.3
−
0.65
−
1.0
1.5
V
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 W)
TJ = 110°C
VGD
0.2
−
−
V
Critical Rate of Rise of Off−State Voltage
(VD = 67% VDRM, RGK = 1 KW, CGK = 0.1 mF, TJ = 110°C)
dv/dt
5.0
15
−
V/ms
Critical Rate of Rise of On−State Current
IPK = 50 A, Pw = 40 msec, diG/dt = 1 A/msec, Igt = 10 mA
di/dt
−
−
100
A/ms
DYNAMIC CHARACTERISTICS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.
3. RGK = 1000 Ohms included in measurement.
4. Does not include RGK in measurement.
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2
MCR8SDG, MCR8SMG, MCR8SNG
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
Anode +
VTM
on state
IH
IRRM at VRRM
+ Voltage
IDRM at VDRM
Reverse Blocking Region
(off state)
Forward Blocking Region
(off state)
Reverse Avalanche Region
P(AV), AVERAGE POWER DISSIPATION (WATTS)
Anode −
TC, CASE TEMPERATURE (°C)
110
105
100
95
90
85
dc
80
30°
90° 120° 180°
60°
75
0
1
2
3
4
5
6
7
8
IT(RMS), RMS ON−STATE CURRENT (AMPS)
15
dc
12
9
180°
90°
60°
6
30°
3
0
0
1
3
2
4
5
6
7
8
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
Figure 1. Typical RMS Current Derating
Figure 2. On−State Power Dissipation
100
100
TYPICAL @ TJ = 25°C
GATE TRIGGER CURRENT ( m A)
IT, INSTANTANEOUS ON−STATE CURRENT (AMPS)
120°
MAXIMUM @ TJ = 110°C
10
MAXIMUM @ TJ = 25°C
1
1.0
1.5
2.0
2.5
3.0
80
70
60
50
40
30
20
10
0
−40 −25 −10
0.1
0.5
90
3.5
5
20
35
50
65
80
95 110
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical On−State Characteristics
Figure 4. Typical Gate Trigger Current versus
Junction Temperature
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3
VGT, GATE TRIGGER VOLTAGE (VOLTS)
MCR8SDG, MCR8SMG, MCR8SNG
IH, HOLDING CURRENT ( m A)
1000
100
10
1
−40 −25 −10
5
20
35
50
65
80
95
110
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−40 −25 −10
5
20
35
50
65
80
95 110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
IL, LATCHING CURRENT ( m A)
1000
100
10
1
−40 −25 −10
5
20
35
50
65
80
95
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Latching Current versus
Junction Temperature
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4
110
MCR8SDG, MCR8SMG, MCR8SNG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
ON Semiconductor and the
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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For additional information, please contact your local
Sales Representative
MCR8S/D