HN2D02FUTW1T1 Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications. • Fast trr, < 3.0 ns • Low CD, < 2.0 pF • Available in 8 mm Tape and Reel Use HN2D02FUTW1T1 to order the 7 inch/3000 unit reel. http://onsemi.com 6 4 1 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current (10 ms) Symbol Value VR 80 85 IF 100 mAdc IFM 240 mAdc IFSM (Note 1) 1.0 mAdc 2 3 SC−88 CASE 419B Unit VRM 5 6 5 4 1 2 3 THERMAL CHARACTERISTICS Symbol Max Unit Power Dissipation Rating PD 300 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to + 150 °C 1. t = 10 ms 2. This is maximum rating for a single diode. Derate by 75 percent when using 2 or 3 diodes. MARKING DIAGRAM R7 M R7 = for Specified Device Code M = Date Code Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 1 1 Publication Order Number: HN2D02FUTW1T1/D HN2D02FUTW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit IR VR = 35 V — 0.1 Adc VR = 75 V — 0.1 Reverse Voltage Leakage Current Forward Voltage VF IF = 100 mA — 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 A 80 — Vdc CD VR = 0, f = 1.0 MHz — 2.0 pF trr (Note 3) IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR — 3.0 ns Diode Capacitance Reverse Recovery Time (Figure 1) 3. trr Test Circuit RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp t A IF trr t 10% RL Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit http://onsemi.com 2 IF = 10 mA VR = 6 V RL = 100 HN2D02FUTW1T1 10 100 I R, REVERSE CURRENT (A) µ 10 TA = 85°C TA = 25°C 1.0 TA = −40°C 0.1 0.2 0.4 0.6 0.8 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 125°C 1.0 TA = 25°C 0 10 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8 40 50 HN2D02FUTW1T1 PACKAGE DIMENSIONS SC−88 (SOT−363) CASE 419B−02 ISSUE N A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. G 6 5 4 1 2 3 DIM A B C D G H J K N S −B− S D 6 PL 0.2 (0.008) M B M INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 N J C H K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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