SFH617A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS, 110 °C Rated FEATURES A 1 4 C C 2 3 E • • • • • • • • • • • • Operating temperature from -55 °C to +110 °C Good CTR linearity depending on forward current Isolation test voltage, 5300 VRMS High collector emitter voltage, VCEO = 70 V Low saturation voltage Fast switching times Low CTR degradation Temperature stable Low coupling capacitance End stackable, 0.100" (2.54 mm) spacing High common mode interference immunity Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 17918-20 APPLICATIONS DESCRIPTION • • • • • The 110 °C rated SFH617A (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. AC adapter SMPS PLC Factory automation Game consoles AGENCY APPROVALS The safety application model number covering all products in this datasheet is SFH617A. This model number should be used when consulting safety agency documents. • UL1577, file no. E52744 • cUL tested to CSA 22.2 bulletin 5A • DIN EN 60747-5-5 (VDE 0884-5) available with option 1 • BSI IEC 60950; IEC 60065 • FIMKO • CQC ORDERING INFORMATION S F H 6 1 7 A - PART NUMBER AGENCY CERTIFIED/PACKAGE UL, BSI, FIMKO, cUL DIP-4 DIP-4, 400 mil, option 6 SMD-4, option 7 SMD-4, option 9 VDE, UL, BSI, FIMKO, cUL DIP-4 DIP-4, 400 mil, option 6 SMD-4, option 7 SMD-4, option 9 # CTR BIN X 0 # # PACKAGE OPTION DIP-4 Option 6 7.62 mm 10.16 mm Option 7 Option 9 > 8 mm 8 mm typ. T TAPE AND REEL CTR (%) 40 to 80 SFH617A-1 SFH617A-1X006 SFH617A-1X007T 40 to 80 SFH617A-1X001 SFH617A-1X016 - 63 to 125 SFH617A-2 SFH617A-2X006 SFH617A-2X009T 63 to 125 SFH617A-2X001 SFH617A-2X016 SFH617A-2X017T SFH617A-2X019T (1) 100 to 200 SFH617A-3 SFH617A-3X006 SFH617A-3X007T 100 to 200 SFH617A-3X001 SFH617A-3X016 SFH617A-3X017T (1) - 160 to 320 SFH617A-4 SFH617A-4X006 160 to 320 SFH617A-4X001 SFH617A-4X016 - Notes • Additional options may be possible, please contact sales office. (1) Also available in tubes; do not add T to end. Rev. 2.4, 31-Aug-15 Document Number: 83740 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH617A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp ≤ 10 μs IFSM 2.5 A LED power dissipation at 25 °C Pdiss 70 mW Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V IC 50 mA tp/T = 0.5, tp ≤ 10 ms ICM 100 mA at 25 °C Pdiss 150 mW Operation temperature Tamb - 55 to + 110 °C Storage temperature range Tstg - 55 to + 150 °C Tsld 260 °C OUTPUT Collector current Collector peak current Ouput power dissipation COUPLER Soldering temperature (1) 2 mm from case, ≤ 10 s Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 60 mA VF 1.35 1.65 V Reverse current VR = 6 V IR 0.01 10 μA VR = 0 V, f = 1 MHz CO 13 Capacitance pF OUTPUT Collector emitter capacitance Collector emitter leakage current VCE = 5 V, f = 1 MHz VCE = 10 V CCE 5.2 SFH617A-1 ICEO 2 SFH617A-2 ICEO SFH617A-3 ICEO SFH617A-4 pF 50 nA 2 50 nA 5 100 nA ICEO 5 100 nA VCEsat 0.25 0.4 CC 0.4 COUPLER Collector emitter saturation voltage Coupling capacitance IF = 10 mA, f = 1 MHz V pF Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 2.4, 31-Aug-15 Document Number: 83740 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH617A www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IF = 10 mA, VCE = 5 V IC/IF IF = 1 mA, VCE = 5 V PART SYMBOL MIN. MAX. UNIT SFH617A-1 CTR 40 TYP. 80 % SFH617A-2 CTR 63 125 % SFH617A-3 CTR 100 200 % SFH617A-4 CTR 160 320 % SFH617A-1 CTR 13 30 % SFH617A-2 CTR 22 45 % SFH617A-3 CTR 34 70 % SFH617A-4 CTR 56 90 % SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED Turn-on time IF = 10 mA, VCC = 5 V, RL = 75 Ω ton 3 μs Rise time IF = 10 mA, VCC = 5 V, RL = 75 Ω tr 2 μs Turn-off time IF = 10 mA, VCC = 5 V, RL = 75 Ω toff 2.3 μs Fall time IF = 10 mA, VCC = 5 V, RL = 75 Ω tf 2 μs IF = 10 mA, VCC = 5 V fCO 100 kHz ton 3 μs μs Cut-off frequency SATURATED IF = 20 mA Turn-on time Rise time Turn-off time Fall time SFH617A-2 ton 4.2 SFH617A-3 ton 4.2 μs IF = 5 mA SFH617A-4 ton 6 μs IF = 20 mA SFH617A-1 tr 2 μs SFH617A-2 tr 3 μs SFH617A-3 tr 3 μs IF = 5 mA SFH617A-4 tr 4.6 μs IF = 20 mA SFH617A-1 toff 18 μs IF = 10 mA IF = 10 mA SFH617A-2 toff 23 μs SFH617A-3 toff 23 μs IF = 5 mA SFH617A-4 toff 25 μs IF = 20 mA SFH617A-1 tf 11 μs SFH617A-2 tf 14 μs SFH617A-3 tf 14 μs SFH617A-4 tf 15 μs IF = 10 mA IF = 10 mA IF = 5 mA Rev. 2.4, 31-Aug-15 SFH617A-1 Document Number: 83740 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH617A www.vishay.com IF Vishay Semiconductors +5V IF IF 0 0 tp IC R G = 50 Ω tp = 0.01 T 100 % 90 % t p = 50 µs Channel I Oscilloscope R L = 1 MΩ C L = 20 pF Channel II 50 Ω 10 % 0 tr RL td ts t on 95 10804-3 tp td tr t on (= td + tr) Fig. 1 - Test Circuit, Non-Saturated Operation IF t +5V I F = 10 mA 0 Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 3 - Switching Times IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 2 - Test Circuit, Saturated Operation SAFETY AND INSULATION RATINGS PARAMETER Climatic classification Pollution degree Comparative tracking index Maximum rated withstanding isolation voltage Tested withstanding isolation voltage Maximum transient isolation voltage Maximum repetitive peak isolation voltage Isolation resistance Output safety power Input safety current Input safety temperature Creepage distance Clearance distance Creepage distance Clearance distance Creepage distance Clearance distance Insulation thickness TEST CONDITION According to IEC 68 part 1 According to DIN VDE 0109 Insulation group IIIa According to UL1577, t = 1 min According to UL1577, t = 1 s According to DIN EN 60747-5-5 According to DIN EN 60747-5-5 Tamb = 25 °C, VIO = 500 V Tamb = 100 °C, VIO = 500 V SYMBOL CTI VISO VISO VIOTM VIORM RIO RIO PSO ISI TS DIP-4 DIP-4 DIP-4, 400 mil, option 6 DIP-4, 400 mil, option 6 SMD-4, option 7 and option 9 SMD-4, option 7 and option 9 DTI VALUE UNIT 55/115/21 2 175 4470 5300 8000 890 ≥ 1012 ≥ 1011 700 400 175 ≥7 ≥7 ≥8 ≥8 ≥7 ≥7 ≥ 0.4 VRMS VRMS Vpeak Vpeak Ω Ω mW mA °C mm mm mm mm mm mm mm Note • As per DIN EN 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Rev. 2.4, 31-Aug-15 Document Number: 83740 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH617A www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.6 Tamb = 0 °C 1.4 ICE0 - Leakage Current (nA) VF - Forward Voltage (V) 100 000 Tamb = 25 °C 1.5 Tamb = - 40 °C 1.3 Tamb = - 55 °C 1.2 1.1 Tamb = 50 °C 1.0 Tamb = 75 °C 0.9 Tamb = 100 °C 0.8 Tamb = 110 °C 10 000 1 10 100 100 VCE = 24 V 10 VCE = 12 V 1 0.1 0.01 0.001 - 60 - 40 - 20 0 20 40 60 80 100 120 IF - Forward Current (mA) Tamb - Ambient Temperature (°C) Fig. 4 - Forward Voltage vs. Forward Current Fig. 7 - Leakage Current vs. Ambient Temperature 1.4 90 70 CTRNorm - Normalized CTR (NS) IF = 30 mA 80 IC - Collector Current (mA) VCE = 40 V 1000 0.7 0.6 0.1 IF = 0 mA IF = 20 mA 60 IF = 15 mA 50 40 IF = 10 mA 30 20 IF = 5 mA 10 0 0 1 2 3 4 5 7 6 VCE = 5 V 1.2 1.0 IF = 5 mA IF = 10 mA 0.8 0.6 0.4 IF = 1 mA 0.2 0 - 60 - 40 - 20 0 8 20 40 60 80 100 120 VCE - Collector Emitter Voltage (NS) (V) Tamb - Ambient Temperature (°C) Fig. 5 - Collector Current vs. Collector Emitter Voltage (NS) Fig. 8 - Normalized CTR (NS) vs. Ambient Temperature 1.4 IC - Collector Current (mA) IF = 25 mA 25 20 IF = 10 mA 15 IF = 5 mA 10 5 IF = 2 mA IF = 1 mA 0 0 0.1 0.2 0.3 0.4 CTRNorm - Normalized CTR (sat) 30 1.2 1.0 VCE = 0.4 V IF = 5 mA IF = 10 mA 0.8 0.6 IF = 1 mA 0.4 0.2 0 - 60 - 40 - 20 0 20 40 60 80 100 120 VCE - Collector Emitter Voltage (sat) (V) Tamb - Ambient Temperature (°C) Fig. 6 - Collector Current vs. Collector Emitter Voltage (sat) Fig. 9 - Normalized CTR (sat) vs. Ambient Temperature Rev. 2.4, 31-Aug-15 Document Number: 83740 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH617A www.vishay.com Vishay Semiconductors 1000 VCE = 10 V 1.2 VCC = 5 V Tamb = 25 °C Tamb = 50 °C Tamb = 0 °C 1.0 Tamb = 75 °C Tamb = - 40 °C 0.8 Tamb = - 55 °C 0.6 Tamb = 100 °C 0.4 Tamb = 110 °C 0.2 0 0.1 1 10 fCTR - CTR Frequency (kHz) CTRNorm - Normalized CTR (NS) 1.4 100 10 1 0.1 100 1 10 100 IF - Forward Current (mA) IC - Collector Current (mA) Fig. 10 - Normalized CTR (NS) vs. Forward Current Fig. 13 - CTR Frequency vs. Collector Current 1000 VCE = 5 V, IF = 10 mA VCE = 0.4 V 1.2 Tamb = 25 °C Tamb = 50 °C Tamb = 0 °C 1.0 Tamb = 75 °C Tamb = - 40 °C 0.8 Tamb = - 55 °C 0.6 Tamb = 100 °C 0.4 Tamb = 110 °C 0.2 0 0.1 1 10 100 ton, toff - Switching Time (μs) CTRNorm - Normalized CTR (sat) 1.4 toff 100 10 ton 1 0.1 0.1 1 10 100 IF - Forward Current (mA) RL - Load Resistance (kΩ) Fig. 11 - Normalized CTR (sat) vs. Forward Current Fig. 14 - Switching Time vs. Load Resistance 0 VCE = 5 V - 20 Phase (deg) - 40 - 60 - 80 - 100 - 120 - 140 1 10 100 1000 f - Frequency (kHz) Fig. 12 - CTR Frequency vs. Phase Angle Rev. 2.4, 31-Aug-15 Document Number: 83740 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH617A www.vishay.com Vishay Semiconductors PACKAGE DIMENISONS in millimeters 4 3 6.5 ± 0.5 Pin 1 identifier 1 2 7.62 ± 0.3 4.58 ± 0.5 0.85 ± 0.1 3.5 ± 0.3 0.5 typ. 0.26 3.3 ± 0.5 2.8 ± 0.5 0.5 ± 0.1 2.54 ± 0.25 i178027-10 7.62 to 9.98 Option 6 Option 7 7.62 typ. 7.62 typ. Option 9 7.62 typ. 3.5 ± 0.3 + 0.25 - 0.3 0.35 3.5 ± 0.3 0.1 ± 0.1 3.5 ± 0.3 0.1 min. 0.6 min. 8 min. 2.7 min. 0.6 min. 10.16 ± 0.3 8.16 ± 0.8 10.16 ± 0.3 R 0.25 11.05 1.52 7.7 11.05 1.78 20802-28 8 min. R 0.25 1.78 1.52 0.76 2.54 0.76 2.54 10.16 typ. PACKAGE MARKING SFH617A-3 V YWW 25 Notes • VDE logo is only marked on option 1 parts. Option information is not marked on the part. • Tape and reel suffix (T) is not part of the package marking. Rev. 2.4, 31-Aug-15 Document Number: 83740 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH617A www.vishay.com Vishay Semiconductors SOLDER PROFILES HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 300 Floor life: unlimited 5s Lead temperature Temperature (°C) 250 235 °C to 260 °C first wave 200 wave ca. 200 K/s 150 100 °C to 130 °C 100 Moisture sensitivity level 1, according to J-STD-020 ca. 2 K/s 2 K/s 50 full line: typical dotted line: process limits second wave Conditions: Tamb < 30 °C, RH < 85 % ca. 5 K/s forced cooling 0 0 50 100 94 8626 150 200 250 Time (s) Fig. 15 - Wave Soldering Double Wave Profile According to J-STD-020 for DIP-8 Devices 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 16 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 for SMD-8 Devices Rev. 2.4, 31-Aug-15 Document Number: 83740 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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