VO617C www.vishay.com Vishay Semiconductors Low Input Current Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS FEATURES A 1 4 C C 2 3 E • • • • • • • • • • 22647 DESCRIPTION The 110 °C rated VO617C feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. Copper lead-frame Operating temperature from - 55 °C to + 110 °C Isolation test voltage, 5300 VRMS High collector emitter voltage, VCEO = 80 V Low saturation voltage Fast switching times Low CTR degradation Low coupling capacitance End stackable, 0.100" (2.54 mm) spacing Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • • The coupling devices are designed for signal transmission between two electrically separated circuits. AC adapters SMPS PLC Factory automation Solar inverter AGENCY APPROVALS • • • • • UL1577, file no. E52744 cUL tested to CSA 22.2 bulletin 5A DIN EN 60747-5-5 (VDE 0884), available with option 1 FIMKO EN 60065 and EN60950-1, file no. FI 27409 CQC GB8898-2001 ORDERING INFORMATION V O 6 1 7 C - PART NUMBER # CTR BIN X 0 # Option 6 # Option 7 > 8 mm 10.16 mm PACKAGE OPTION Option 9 > 8 mm CTR (%) AGENCY CERTIFIED/PACKAGE UL, cUL, BSI, FIMKO, CQC 5 mA 40 to 80 63 to 125 100 to 200 DIP-4 - VO617C-2 - - SMD-4, option 9 - VO617C-2X009T - - 40 to 80 63 to 125 100 to 200 160 to 320 VDE, UL, cUL, BSI, FIMKO, CQC DIP-4 DIP-4, 400 mil, option 6 SMD-4, option 7 160 to 320 - VO617C-2X001 VO617C-3X001 VO617C-4X001 VO617C-1X016 VO617C-2X016 VO617C-3X016 VO617C-4X016 - - VO617C-3X017T1 (1) - Notes • Additional options may be available, please contact the sales office. (1) T1 rotation in tape and reel packing. Document Number: 83463 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 02-Aug-13 VO617C www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Reverse voltage Forward current Forward surge current Power dissipation OUTPUT Collector emitter voltage Emitter collector voltage TEST CONDITION VALUE UNIT VR IF 6 60 2.5 70 V mA A mW Pdiss 80 7 50 100 150 V V mA mA mW VISO Ptot Tamb Tstg Tj Tsld 5300 200 - 55 to + 110 - 55 to + 150 125 260 VRMS mW °C °C °C °C tp ≤ 10 μs at 25 °C IFSM Pdiss VCEO VECO Collector current Ouput power dissipation COUPLER Isolation test voltage (RMS) Total power dissipation Operation temperature Storage temperature range Junction temperature Soldering temperature (1) SYMBOL IC tp ≤ 1 ms at 25 °C t = 1 min 2 mm from case, ≤ 10 s Ptot - Total Power Dissipation (mW) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices (DIP). 250 200 Coupled device 150 Phototransistor 100 50 IR-diode 0 0 25 50 75 100 125 Tamb - Ambient Temperature (°C) Fig. 1 - Total Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Forward voltage Reverse current Junction capacitance OUTPUT Collector emitter leakage current Collector emitter capacitance Collector emitter breakdown voltage Emitter collector breakdown voltage COUPLER Collector emitter saturation voltage Coupling capacitance Cut-off frequency TEST CONDITION SYMBOL IF = 60 mA VR = 6 V VR = 0 V, f = 1 MHz MIN. TYP. MAX. UNIT VF IR Cj 1.1 0.01 9 1.6 10 V μA pF VCE = 10 V VCE = 5 V, f = 1 MHz IC = 100 μA IE = 10 μA ICEO CCE BVCEO BVECO 0.3 2.8 100 nA pF V V IF = 10 mA, IC = 2.5 mA f = 1 MHz IF = 10 mA, VCC = 5 V, RL = 100 Ω VCEsat CIO fctr 0.25 0.3 110 0.4 V pF kHz 80 7 Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Document Number: 83463 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 02-Aug-13 VO617C www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IC/IF IF = 5 mA, VCE = 5 V PART VO617C-1 VO617C-2 VO617C-3 VO617C-4 SYMBOL CTR CTR CTR CTR MIN. 40 63 100 160 TYP. MAX. 80 125 200 320 UNIT % % % % SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER NON-SATURATED Rise time Fall time Turn-on time Turn-off time SATURATED Rise time Fall time Turn-on time Turn-off time TEST CONDITION SYMBOL MIN. TYP. MAX. IC = 2 mA, VCC = 5 V, RL = 100 Ω tr tf ton toff 3 3 6 4 μs μs μs μs IF = 1.6 mA, VCC = 5 V, RL = 1.9 kΩ tr tf ton toff 7 12 9 15 μs μs μs μs VCC = 5 V Input UNIT Input pulse RL VOUT 10 % Output pulse 90 % tr Fig. 2 - Test Circuit tf t off t on Fig. 3 - Test Circuit and Waveforms SAFETY AND INSULATION RATINGS PARAMETER MAXIMUM SAFETY RATINGS Output safety power Input safety current Safety temperature Comparative tracking index INSULATION RATED PARAMETERS Maximum withstanding isolation voltage Maximum transient isolation voltage Maximum repetitive peak isolation voltage Insulation resistance Tamb = 25 °C, VDC = 500 V Isolation resistance Tamb = 100 °C, VDC = 500 V Climatic classification (according to IEC 68 part 1) Environment (pollution degree in accordance to DIN VDE 0109) Standard DIP-4 Internal and external creepage 400 mil DIP-4, SMD-4 option 9 Standard DIP-4 Clearance 400 mil DIP-4, SMD-4 option 9 Insulation thickness SYMBOL VALUE UNIT PSO Isi TS CTI 700 400 175 175 mW mW °C VISO VIOTM VIORM VIORM (1) RIO RIO 5300 8000 565 1140 1012 1011 55/110/21 2 ≥7 ≥8 ≥7 ≥8 0.4 VRMS Vpeak Vpeak Vpeak Ω Ω mm mm mm mm mm Notes • As per DIN EN 60747-5-5, § 7.4.3.8.2), this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. (1) Only for option 6. Document Number: 83463 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 02-Aug-13 VO617C www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 14 Tamb = 110 °C Tamb = 75 °C Tamb = 25 °C Tamb = 0 °C Tamb = - 55 °C 10 IC - Collector Current (mA) IF - Forward Current (mA) 100 1 0.1 IF = 10 mA 12 10 8 6 4 0.8 1.0 1.2 1.4 1.6 0 VF - Forward Voltage (V) IF = 2 mA IF = 35 mA 45 IF = 30 mA 40 35 IF = 25 mA 30 IF = 20 mA 25 20 IF = 15 mA 15 10 IF = 10 mA IF = 1 mA 5 IF = 5 mA 0 0 1 2 3 4 5 6 7 8 0.2 0.3 0.4 9 10 Fig. 7 - Collector Current vs. Collector Emitter Voltage (saturated) NCTR - Normalized CTR (non-saturated) 55 50 0.1 VCE - Collector Emitter Voltage (sat) (V) Fig. 4 - Forward Voltage vs. Forward Current IC - Collector Current (mA) IF = 1 mA 2 0 0.6 1.2 IF = 5 mA 1.0 0.8 0.6 0.4 0.2 0 Fig. 5 - Collector Current vs. Collector Emitter Voltage (NS) Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C - 60 - 40 - 20 0 VCE - Collector Emitter Voltage (non-sat) (V) 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 8 - Normalized Current Transfer Ratio (non-saturated) vs. Ambient Temperature 1.2 IF = 0 mA 1000 VCE = 40 V 100 10 VCE = 24 V 1 0.1 VCE = 12 V 0.01 0.001 NCTR - Normalized CTR (sat) 10 000 ICE0 - Leakage Current (nA) IF = 5 mA IF = 5 mA 1.0 0.8 0.6 0.4 0.2 0 - 60 - 40 - 20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 6 - Leakage Current vs. Ambient Temperature Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C - 60 - 40 - 20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 9 - Normalized Current Transfer Ratio (saturated) vs. Ambient Temperature Document Number: 83463 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 02-Aug-13 VO617C Vishay Semiconductors 0.40 0 VCE = 5 V IF = 10 mA 0.35 - 20 0.30 0.25 0.20 Ic = 2 mA 0.15 0.10 Ic = 1 mA 0.05 RL = 100 Ω - 40 Ic = 5 mA Phase Angle (deg) VCEsat - Collector Emitter Voltage (V) www.vishay.com - 60 - 80 - 100 - 120 RL = 1000 Ω - 140 0.00 - 160 - 60 - 40 - 20 0 20 40 60 80 100 120 1 Tamb - Ambient Temperature (°C) 1000 Tamb = 0 °C 1.2 VCC = 5 V Tamb = - 55 °C FCTR (kHz) Tamb = 25 °C 1.0 0.8 0.6 Tamb = 75 °C 0.4 Tamb = 100 °C Normalized to: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 0.2 0 0.1 1 10 100 10 1 0.1 100 1 IF - Forward Current (mA) 100 Fig. 14 - FCTR vs. Collector Current 1000 1.2 VCE = 0.4 V Normalized to: IF = 5 mA, VCE = 5 V, Tamb = 25 °C Tamb = 0 °C VCE = 5 V, IF = 5 mA Tamb = - 55 °C 0.6 0.4 Tamb = 25 °C 0.2 Tamb = 75 °C Tamb = 100 °C 0 0.1 1 10 ton, toff Switching Time (μs) 0.8 10 IC (mA) Fig. 11 - Normalized CTR (non-saturated) vs. Forward Current 1.0 1000 Fig. 13 - FCTR vs. Phase Angle 1.4 NCTR - Normalized CTR (sat) 100 f - Cut-off Frequency (kHz) Fig. 10 - Collector Emitter Voltage vs. Ambient Temperature (saturated) NCTR - Normalized CTR (NS) 10 100 toff (μs) 10 1 ton (μs) 0.1 100 IF - Forward Current (mA) Fig. 12 - Normalized CTR (saturated) vs. Forward Current 0 5 10 15 20 RL - Load Resistance (kΩ) Fig. 15 - Switching Time vs. Load Resistance Document Number: 83463 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 02-Aug-13 VO617C www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 4 3 6.5 ± 0.5 Pin 1 identifier 1 2 Option 9 Option 6 4.58 ± 0.5 7.62 typ. 7.62 typ. 0.85 ± 0.1 3.5 ± 0.3 3.5 ± 0.3 3.5 ± 0.3 0.1 ± 0.1 1.25 ± 0.1 0.1 min. 0.5 typ. 0.6 min. 3.3 ± 0.5 2.8 ± 0.5 2.7 min. 8.16 ± 0.8 10.16 ± 0.3 0.5 ± 0.1 2.54 ± 0.25 10.16 typ. 0.76 Option 7 R0.25 2.54 7.62 typ. 1.78 8 min. + 0.25 0.35 - 0.3 3.5 ± 0.3 8 min. i178027-25 1.52 11.05 0.6 min. 10.16 ± 0.3 PACKAGE MARKING (example of VO617C-3X016) VO617C-3 V YWW 25 Note • Option information is not marked. Document Number: 83463 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 02-Aug-13 VO617C www.vishay.com Vishay Semiconductors PACKING INFORMATION DEVICE PER TUBE TYPE UNITS/TUBE TUBES/BOX UNITS/BOX DIP-4 100 40 4000 Regular, special, or bar code label Tape slot in core 13" 17999-1 Fig. 16 - Tape and Reel Shipping Medium Ø 1.55 ± 0.05 2 ± 0.1 4 ± 0.1 1.75 ± 0.1 7.5 ± 0.1 16 ± 0.3 8 ± 0.1 0.3 ± 0.05 22536-3 Fig. 17 - Tape Packing for Option 7 and 9 (1000 units per reel) Document Number: 83463 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 02-Aug-13 VO617C www.vishay.com Ø 1.55 ± 0.05 Vishay Semiconductors 12 ± 0.1 2 ± 0.1 4 ± 0.1 1.75 ± 0.1 7.5 ± 0.1 16 ± 0.3 0.3 ± 0.05 22713 Fig. 18 - Tape Packing for Option 7 and 9, T1 rotation (2000 units per reel) Document Number: 83463 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.2, 02-Aug-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000