SFH601 Datasheet

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SFH601
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Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
A
1
6 B
C
2
5 C
NC
3
4 E
• Isolation test voltage (1.0 s), 5300 VRMS
• VCEsat 0.25 (≤ 0.4) V, IF = 10 mA, IC = 2.5 mA
• Built to conform to VDE requirements
• Highest quality premium device
• Long term stability
i179004-11
• Storage temperature, - 55 ° to + 150 °C
i179004-3
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
The SFH601 is an optocoupler with a gallium arsenide LED
emitter which is optically coupled with a silicon planar
phototransistor detector. The component is packaged in a
plastic plug-in case 20 AB DIN 41866.
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
The coupler transmits signals between two electrically
isolated circuits.
• DIN EN 60747-5-5 (VDE 0884-5) available with option 1
• CSA 93751
• BSI IEC 60950; IEC 60065
ORDERING INFORMATION
S
F
H
6
0
1
-
#
X
CTR
BIN
PART NUMBER
0
#
DIP
Option 6
7.62 mm
10.16 mm
Option 7
Option 9
#
PACKAGE OPTION
> 0.7 mm
AGENCY CERTIFIED/PACKAGE
UL, BSI, CSA
DIP-6
> 0.1 mm
CTR (%)
40 to 80
63 to 125
100 to 200
160 to 320
SFH601-1
SFH601-2
SFH601-3
SFH601-4
DIP-6, 400 mil, option 6
SFH601-1X006
SFH601-2X006
SFH601-3X006
SFH601-4X006
SMD-6, option 7
SFH601-1X007
SFH601-2X007T
SFH601-3X007(T)
SFH601-4X007(T)
SMD-6, option 9
SFH601-1X009T
SFH601-2X009
SFH601-3X009
SFH601-4X009(T)
40 to 80
63 to 125
100 to 200
160 to 320
SFH601-1X001
SFH601-2X001
-
SFH601-4X001
VDE, cUL, UL, BSI
DIP-6, option 1
DIP-6, 400 mil, option 6
SFH601-1X016
-
SFH601-3X016
SFH601-4X016
SMD-6, option 7
SFH601-1X017
SFH601-2X017(T)
SFH601-3X017(T)
-
SMD-6, option 9
-
-
SFH601-3X019(T)
-
Note
• For additional information on the available options refer to option information.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
DC forward current
IF
60
mA
Surge forward current
Total power dissipation
t = 10 μs
IFSM
2.5
A
Pdiss
100
mW
Document Number: 83663
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 1.5, 19-Aug-13
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector emitter voltage
VCEO
100
V
Emitter base voltage
VEBO
7
V
IC
50
mA
IC
100
mA
Pdiss
150
mW
t = 1.0 s
VISO
5300
VRMS
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to +100
°C
Tj
100
°C
Tsld
260
°C
OUTPUT
Collector current
t = 1.0 ms
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Isolation resistance
Junction temperature
Soldering temperature
(1)
max. 10 s, dip soldering:
distance to seating plane ≥ 1.5 mm
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
1.25
1.65
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
Breakdown voltage
IR = 10 μA
VBR
Reverse current
Capacitance
6
V
V
VR = 6 V
IR
0.01
VF = 0 V, f = 1 MHz
CO
25
pF
Rthja
750
K/W
Thermal resistance
10
μA
OUTPUT
Collector emitter capacitance
f = 1 mHz, VCE = 5 V
CCE
6.8
pF
Collector base capacitance
f = 1 mHz, VCB = 5 V
CCB
8.5
pF
Emitter base capacitance
f = 1 mHz, VEB = 5 V
CEB
11
pF
Rthja
500
K/W
SFH601-1
ICEO
2
50
SFH601-2
ICEO
2
50
nA
SFH601-3
ICEO
5
100
nA
SFH601-4
ICEO
5
100
nA
IF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
VI-O = 0, f = 1 MHz
CIO
0.6
Thermal resistance
Collector emitter leakage current
VCE =10 V
nA
COUPLER
Saturation voltage collector emitter
Capacitance (input to output)
V
pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83663
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.5, 19-Aug-13
Alternative Device Available, Use CNY17
SFH601
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Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
IF = 10 mA
IC/IF at VCE = 5.0 V
IF = 1 mA
PART
SYMBOL
MIN.
MAX.
UNIT
SFH601-1
CTR
40
TYP.
80
%
SFH601-2
CTR
63
125
%
SFH601-3
CTR
100
200
%
SFH601-4
CTR
160
320
SFH601-1
CTR
13
30
%
SFH601-2
CTR
22
45
%
SFH601-3
CTR
34
70
%
SFH601-4
CTR
56
90
%
MIN.
TYP.
%
Note
• Current transfer ratio and collector emitter leakage current by dash number.
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MAX.
UNIT
NON-SATURATED
Current
VCC = 5 V, RL = 75 Ω
IF
10
mA
Rise time
VCC = 5 V, RL = 75 Ω
tr
2
μs
Fall time
VCC = 5 V, RL = 75 Ω
tf
2
μs
Turn-on time
VCC = 5 V, RL = 75 Ω
ton
3
μs
Turn-off time
VCC = 5 V, RL = 75 Ω
toff
2.3
μs
SATURATED
Current
Rise time
Fall time
Turn-on time
Turn-off time
IF
SFH601-1
IF
20
mA
SFH601-2
IF
10
mA
SFH601-3
IF
10
mA
SFH601-4
IF
0.5
mA
SFH601-1
tr
2
μs
SFH601-2
tr
3
μs
SFH601-3
tr
3
μs
SFH601-4
tr
4.6
μs
SFH601-1
tf
11
μs
SFH601-2
tf
14
μs
SFH601-3
tf
14
μs
SFH601-4
tf
15
μs
SFH601-1
ton
3
μs
μs
SFH601-2
ton
4.2
SFH601-3
ton
4.2
μs
SFH601-4
ton
6
μs
SFH601-1
toff
18
μs
SFH601-2
toff
23
μs
SFH601-3
toff
23
μs
SFH601-4
toff
25
μs
RL = 7 5 Ω
IC
IF
VCC = 5 V
VCC = 5 V
47 Ω
isfh601_01
1kΩ
47 Ω
isfh601_02
Fig. 1 - Linear Operation (without Saturation)
Fig. 2 - Switching Operation (with Saturation)
Document Number: 83663
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Rev. 1.5, 19-Aug-13
Alternative Device Available, Use CNY17
SFH601
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SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
Climatic classification
SYMBOL
MIN.
according to IEC 68 part 1
Comparative tracking index
TYP.
MAX.
UNIT
55/100/21
CTI
175
VIOTM
8000
VIORM
890
399
V
V
PSO
700
mW
ISI
400
mA
TSI
175
°C
Creepage distance
standard DIP-6
7
mm
Clearance distance
standard DIP-6
7
mm
Creepage distance
400 mil DIP-6
8
mm
Clearance distance
400 mil DIP-6
8
mm
Insulation thickness,
reinforced rated
per IEC 60950 2.10.5.1
0.4
mm
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
103
103
5
(TA = - 25 ˚C, VCE = 5.0 V)
IC/IF = f (IF)
5
IC
(%)
IF
IC
(%)
IF
4
VCE = 5.0 V)
4
3
2
102
DC
Pulsbetrieb
Pulse
3
IC/IF = f (IF)
2
102
1
1
5
5
100
10-1
100
10-1
5
5
100
Fig. 3 - Current Transfer Ratio vs. Diode Current
103
103
DC
(TA = 0 °C, VCE = 5.0 V)
Pulsmode
IC/IF = f (IF)
Pulse
4
3
1
5
100
10-1
isfh601_04
5
100
5
101
5
DC
Pulsbetrieb
Pulse
TA = 50 °C, VCE = 5.0 V)
IC/IF = f (IF)
4
3
2
102
2
102
2
IF (mA)
Fig. 4 - Current Transfer Ratio vs. Diode Current
101 2
Fig. 5 - Current Transfer Ratio vs. Diode Current
IC
(%)
IF
IC
(%)
IF
5
5
IF (mA)
isfh601_05
IF (mA)
isfh601_03
100
5
2
101
1
5
100
10-1
isfh601_06
5
100
5
101 2
IF (mA)
Fig. 6 - Current Transfer Ratio vs. Diode Current
Document Number: 83663
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Rev. 1.5, 19-Aug-13
Alternative Device Available, Use CNY17
SFH601
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103
5
DC
Pulsbetrieb
Pulse
Vishay Semiconductors
30
TA = 75 °C, VCE = 5.0 V)
DC
Pulsbetrieb
Pulse
IC/IF = f (IF)
IF = ± 14 mA
IF = ± 12 mA
(%)
4
2
1
5
IF = ± 10 mA
20
Ic (mA)
IC
IF
3
102
IC = f (VCE)
IF = ± 8 mA
IF = ± 6 mA
10
IF = ± 4 mA
IF = ± 1 mA
100
10-1
100
5
isfh601_07
0
101 2
5
IF (mA)
10
15
1.2
25°
50°
75°
4
1.1
3
2
102
VF (V)
IC
(%)
IF
VCE
Fig. 10 - Output Characteristics
DC
Pulsbetrieb
Pulse
5
5
isfh601_10
Fig. 7 - Current Transfer Ratio vs. Diode Current
103
0
IF = ± 2 mA
1
5
1.0
(IF = 10 mA, VCE = 5.0 V)
IC/IF = f (T)
101
- 25
0.9
0
25
50
Fig. 8 - Current Transfer Ratio vs. Diode Current
30
VCE = 40 V
IB = 10 µA
IB = 5 µA
IB = 2 µA
0
isfh601_09
5
VCE
10
Fig. 9 - Transistor Characteristics
15
ICEO (µA)
IC (mA)
IC = f (VCE)
VCE = 10 V
10-1
IB = 30 µA
(IF = 0)
0
ICEO = f (V, T)
(IF = 0)
IB = 40 µA
IB = 20 µA
102
Fig. 11 - Forward Voltage
5
20
101
IF (mA)
100
DC
Pulsbetrieb
Pulse
10
100
isfh601_11
TA(°C)
isfh601_08
10- 1
°C 75
5
10-2
5
10-3
- 25
isfh601_12
0
25
50
TA (°C)
75
100
Fig. 12 - Collector Emitter Off-state Current
Document Number: 83663
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Rev. 1.5, 19-Aug-13
Alternative Device Available, Use CNY17
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1.0
1.0
VCEsat = f (IC)
0.9
0.8
0.7
VCEsat (V)
VCEsat = f (IC)
0.8
IF = 3 x IC
0.7
0.6
VCE sat (V)
0.6
0.5
0.4
0.3
0.4
0.3
0.2
0.2
0.1
0
0.1
100
101
0
102
IC (mA)
isfh601_13
IF = IC
0.5
IF = 2 x IC
IF = 3 x IC
100
isfh601_16
Fig. 13 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-1
104
VCEsat = f (IC)
0.8
IF (mA)
VCEsat (V)
0.7
0.6
0.5
IF = 2 x IC
0.4
103
D=0
0.005
0.01
0.02
0.05
0.1
D=
tp
T
tp
IF
T
102
0.3
IF = 3 x IC
0.2
0.2
0.5
DC
0.1
10
0
100
isfh601_14
101
10- 5
102
10- 4
10- 3
10- 2
10- 1
100
101
tp (s)
isfh601_17
IC (mA)
D = parameter, IF = f(tp)
1
Fig. 17 - Permissible Pulse Load
Fig. 14 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-2
1.0
200
Ptot = f (TA)
VCEsat = f (IC)
0.8
IF = IC
150
Ptot (mW)
0.7
VCE sat (V)
102
5
Fig. 16 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-4
1.0
0.9
5
101
IC (mA)
0.6
0.5
0.4
0.3
IF = 2 x IC
0.2
IF = 3 x IC
Transistor
100
Diode
50
0.1
0
100
isfh601_15
5
101
IC (mA)
5
102
Fig. 15 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-3
0
0
isfh601_18
25
50
75
100
TA (°C)
Fig. 18 - Permissible Power Dissipation for Transistor and Diode
Document Number: 83663
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Rev. 1.5, 19-Aug-13
Alternative Device Available, Use CNY17
SFH601
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120
IF = f (TA)
IF (mA)
90
60
30
0
0
25
50
75
100
TA (°C)
isfh601_19
Fig. 19 - Permissible Forward Current Diode
PACKAGE DIMENSIONS in inches (millimeters)
3
2
1
4
5
6
Pin one ID
6.4 ± 0.1
ISO method A
8.6 ± 0.1
7.62 typ.
1.2 ± 0.1
1 min.
3.555 ± 0.255
18°
4° typ.
2.95 ± 0.5
0.8 min.
0.85 ± 0.05
0.5 ± 0.05
0.25 typ.
3° to 9°
7.62 to 8.81
i178004
2.54 typ.
Option 6
Option 7
Option 9
10.36
9.96
7.62 typ.
9.53
10.03
7.8
7.4
7.62 ref.
0.7
4.6
4.1
0.102
0.249
0.30 typ.
8 min.
0.51
1.02
0.35
0.25
8.4 min.
10.16
10.92
10.3 max.
0.76
0.76
2.54
R0.25
2.54
R0.25
1.78
1.78
18450-16
15° max.
8 min.
8 min.
11.05
1.52
8 min.
11.05
1.52
Document Number: 83663
7
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Rev. 1.5, 19-Aug-13
DIP-6A
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Vishay Semiconductors
DIP-6A
PACKAGE DIMENSIONS in inches (millimeters)
3
2
1
4
5
6
Pin one ID
6.4 ± 0.1
ISO method A
8.6 ± 0.1
1 min.
7.62 typ.
1.2 ± 0.1
3.555 ± 0.255
18°
4° typ.
2.95 ± 0.5
0.8 min.
0.85 ± 0.05
0.5 ± 0.05
3° to 9°
0.25 typ.
7.62 to 8.81
i178004
2.54 typ.
Note
The information in this document provides generic information but for specific information on a product the appropriate product datasheet
should be used.
Rev. 1.2, 24-Aug-15
Document Number: 83263
1
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Revision: 02-Oct-12
1
Document Number: 91000