3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M www.vishay.com Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • UL recognition file number E54214 • Ideal for printed circuit board e4 • High surge current capability • High case dielectric strength • Solder dip 275 °C max. 10 s, per JESD 22-B106 − ~ • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ~ + + ~ ~ − TYPICAL APPLICATIONS Case Style KBPM General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, and telecommunication applications. PRIMARY CHARACTERISTICS Package KBPM MECHANICAL DATA IF(AV) 3.0 A Case: KBPM VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V IFSM 80 A IR 5 μA VF at IF = 3.0 A 1.05 V TJ max. 150 °C Diode variations In-Line Molding compound meets UL 94 V-0 flammability rating Base P/N-E4 - RoHS-compliant, commercial grade Terminals: Silver plated J-STD-002 and JESD22-B102 leads, solderable per Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 V Maximum RMS voltage VRMS 35 70 140 280 420 560 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 V Maximum average forward output rectified current at TA = 55 °C (Fig. 1) IF(AV) 3.0 A Peak forward surge current 50 Hz single half sine-wave superimposed on rated load IFSM 80 A I2t 32 A2s TJ, TSTG - 55 to + 150 °C Rating for fusing (t < 10 ms) Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage drop per diode TEST SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M CONDITIONS 3.0 A Maximum DC reverse current at rated DC blocking voltage per diode TJ = 25 °C Typical junction capacitance per diode 4.0 V, 1 MHz Revision: 27-Jun-13 TJ = 125 °C VF 1.05 UNIT V 5.0 IR CJ 500 25 μA pF Document Number: 88888 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M Typical thermal resistance (1) RJA 30 RJL 11 UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.912 51 600 Anti-static PVC tray 3KBP06M-E4/51 RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 Heat Sink Mounting: 3.0 x 3.0 x 0.11" Thick (7.5 x 7.5 x 0.3 cm) Al. Plate 60 Hz Resistive or Inductive Load 3 With Heat Sink 2 Without Heat Sink 1 Instantaneous Forward Current (A) Average Forward Current (A) 4 20 40 60 80 100 120 140 1 TJ = 125 °C 0.1 TJ = 25 °C 0.01 0.4 0 0 TJ = 150 °C 160 0.5 0.7 0.9 0.8 1.0 1.1 1.2 Fig. 3 - Typical Forward Characteristics Per Diode Fig. 1 - Forward Current Derating Curve 100 Instantaneous Reverse Current (µA) 100 Peak Forward Surge Current (A) 0.6 Instantaneous Forward Voltage (V) Ambient Temperature (°C) 80 60 40 20 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0 1 10 100 Number of Cycles at 60 Hz Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 27-Jun-13 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Forward Characteristics Per Diode Document Number: 88888 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M www.vishay.com Vishay General Semiconductor Junction Capacitance (pF) 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 1 100 10 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style KBPM 0.600 (15.24) 0.560 (14.22) 0.125 x 45° (3.2) 0.460 (11.68) 0.500 (12.70) 0.420 (10.67) 0.460 (11.68) 0.60 (15.2) MIN. 0.034 (0.86) 0.028 (0.76) DIA. 0.200 (5.08) 0.180 (4.57) 0.50 (12.7) MIN. 0.060 (1.52) 0.160 (4.1) 0.140 (3.6) 0.105 (2.67) 0.085 (2.16) Polarity shown on front side of case: positive lead by beveled corner Revision: 27-Jun-13 Document Number: 88888 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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