TND360/D Rev. 0, February 2009 Up to 180 W High Voltage LCD TV Power and Integrated Inverter Supply 12 February 2009 © 2009 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this design package. No licenses to ON Semiconductor’s or any third party’s Intellectual Property is conveyed by the transfer of this documentation. This reference design documentation package is provided only to assist the customers in evaluation and feasibility assessment of the reference design. It is expected that users may make further refinements to meet specific performance goals. 2 Table of Contents Overview..............................................................................................................4 LCD-TV Power Architecture and Evolution ......................................................5 Critical Design Objectives..................................................................................8 PFC Stage ............................................................................................................8 EMI filter ........................................................................................................9 Control Approach.........................................................................................11 Design Procedure ........................................................................................12 Test Results.................................................................................................16 Flyback Stage for Control, Signal & Audio Power .........................................18 NCP1351 variable OFF time PWM controller ..............................................18 ON Mode Operation.....................................................................................20 Cross Regulation Considerations ................................................................21 Flyback Waveforms .....................................................................................22 Standby Mode Considerations.....................................................................23 Higher Standby power capability solution ....................................................26 Configuring the Flyback for other output voltages........................................28 The secondary regulation and safety circuit ................................................32 Flyback safety tests .....................................................................................33 High Voltage Backlight Inverter.......................................................................39 Microsemi LX6503 backlight controller ........................................................40 Fixed frequency zero voltage switching Full Bridge .....................................42 Full Bridge Driver Circuit Description ...........................................................48 Full Bridge Zero Voltage Switching Waveforms...........................................50 High Voltage (HV) Transformer ...................................................................52 Basic Transformer Construction ..................................................................52 CCFL Drive and Current Balancing.............................................................53 Overall Efficiency Performance....................................................................58 Appendix ...........................................................................................................59 Board Photographs......................................................................................61 Schematics of SMPS1 .................................................................................62 Bill of Materials of the HV-LIPS board (SMPS1 Version).............................66 NCP1351 .....................................................................................................74 NCP1606/7 ..................................................................................................74 LX6503 ........................................................................................................74 Magnetics Suppliers ....................................................................................74 References on Energy Standards................................................................75 Schematics of Complete PCB with all Configuration Options ......................76 3 Overview This reference document describes a built-and-tested, GreenPointTM solution for and LCD-TV Integrated Power Supply (LIPS) that combines the main system power with the backlight inverter. In this architecture the inverter is directly powered from a high voltage rail (HV-LIPS) to improve the system power conversion efficiency and simplify the overall architecture by eliminating a power conversion stage. In this reference design, the inverter is configured to power 12 cold cathode fluorescent lamps (CCFL). All the circuitry is resident in on a single PCB as might be found in a 32” LCD-TV. This reference design circuit consists of a single-sided 175 mm x 330 mm printed circuit board designed to fit into the chassis of a LCD-TV. The height is 25 mm. Figure 1 illustrates the basic system architecture. As shown, ON Semiconductor devices are combined with a next generation backlight controller from Microsemi to provide a complete power solution. This design has been engineered to achieve optimum performance compared to traditional LCD-TV power architectures and at the same time simplify the overall bill of materials by selecting a proprietary high efficiency fly-back controller topology that eliminated the need for a dedicated standby power stage and still meets global standby power requirements for television sets. Figure 1: Overall System Block Diagram 4 LCD-TV Power Architecture and Evolution One of the key differentiating factors of a flat TV over a classical TV is the thickness of the cabinet - the thinner the better. This involves several considerations: • • • • The amount of power to be delivered is relatively large: the number of watts per cm3 is much larger compared to the one in a CRT TV. Because the TV will be used in the living room, audible noise can be a problem, and the use of fans is limited. Overall cost in the very competitive environment of the consumer electronics world is critical The panel, the power supply and the audio amplifiers are close to each other; therefore the generation of EMI and susceptibility to EMC could have an impact on picture and sound quality. Mainstream (32”+) Flat TVs power supplies require the generation of several voltage rails to power the various system blocks such as audio, backlighting, and signal processing. The power supply does not generate all the voltages required within the set, instead local linear and DC-DC converters on the signal processing board are used to provide various low voltage rails. It is fairly common for manufacturers to use a universal power supply that supports 90-265 Vac. This allows a single power supply design based on a specific TV size to be used for a series of models for different regions simplifying logistics and reducing development cost. If the LCD-TV is intended for global use and the power is over 75 W, it is necessary to comply with IEC 61000-3-2, the EU standard for harmonic reduction, so an active power factor control stage is used. The largest single power consuming sub-system within the LCD-TV is the backlight. The majority of LCD-TVs today use an array of CCFL lamps as the backlight light source. These lamps are intended to be driven by a high AC voltage and the current within the lamps is regulated to achieve even backlighting. Historically the inverter was a separate module powered from a nominal 24 V dc supply. An example of the classical 24 V dc architecture can be found in earlier LCD-TV reference designs such as TND316/D. While this approach simplified the design of the LCD-TV because the backlighting requirements are tied to the LCD panel and one power supply design could be used for panels from multiple vendors, the approach was inefficient and added an extra power stage. For example, the AC input is boosted to 400 V dc in the PFC stage and then transformed to 24 V dc with a flyback of resonant LLC half bridge stage. The 24 V dc was then provided to the inverter module which converted the low voltage DC voltage into a high voltage (> 1000 V ac) to drive the lamps. This multi-stage conversion process results in significant losses and increased system cost. 5 The HV-LIPS architecture employed in this reference design is intended to improve the overall system efficiency by eliminating the 400 to 24 V dc conversion stage and directly power the inverter from the high voltage PFC rail. This requires the merging of the traditional power supply function within the LCDTV with the inverter in a seamless manner to optimize the overall system solution. This has three primary benefits: y y y Increases overall system efficiency Reduces active power consumption and heat generation which enhances system reliability and reduces component stress Reduces the overall number of parts to improve the overall bill of materials cost The other drivers for this architecture are increased consumer awareness on the cost of energy and new regulatory considerations that are intended to address overall power consumption of TVs and their impact on environment and the energy infrastructure. Historically, standby losses in consumer electronics were the primary concern of governmental and power conservation agencies since these devices are always connected to the AC main and always consuming some power, even in off mode. As a result, there are numerous voluntary and regulatory standards around the globe intended to reduce standby power. Some of the typical requirements are listed below. Region / Country China Korea Program name Requirements for Televisions CECP Energy Saving 3W 3W European Union EU Eco-Label European Union EU Code of Conduct GEEA Energy Star® 1 W or 9 W with an embedded set top box (STB) 3 W with a STB Europe US 1W 1W Table 1: Example Standby Requirements by Region As the screen size of direct view flat TVs increases, so does the ON mode power consumption. As a result, regulatory agencies have become concerned about the cumulative impact on the power grid of ON state power as flat TVs gain market share and consumers switch from CRT and projection TVs to large display direct view technologies such as Plasma and LCD-TV. In the US, the 6 Environmental Protection Agency (EPA) started a process in 2006 to revise the existing voluntary Energy Star standard for TVs to include active power consumption requirements as part of its criteria for qualifying energy efficiency TVs. This standard was revised and went into effect in November 2008 and now incorporates maximum active power requirements as a function of screen size. As part of the specification development process, existing TVs were evaluated to the proposed standards and at the time, less than 30% of the TVs tested on the market meet the active and standby test requirements. The active power limits in the Version 3 Energy Star standard are listed in the table below. As illustrated, there are a series of equations based on screen area and vertical resolution to determine the active power limit. For example, a 42” High Definition TV can consume no more than 208 W out of the box when tested against an internationally approved audio/video test signal set which are meant to represent a common viewing environment. Screen Area Maximum On Mode Power Consumption Maximum On Mode Power Consumption (A expressed in in2) (A expressed in cm2) Non-High Definition TVs (i.e. <= 480 Native Vertical Resolution) PMax = 0.120 * A + 25 All Screen Areas PMax = 0.01860 * A + 25 High Definition and Full High Definition TVs (i.e. > 480 Native Vertical Resolution) A < 680 inch2 (< 4,387 cm2) PMax = 0.200 * A + 32 PMax = 0.03100 * A + 32 680 inch2 <= A < 1045 inch2 (4,387 cm2 <= A < 6,742 cm2) PMax = 0.240 * A + 27 PMax = 0.03720 * A + 27 A >= 1045 inch2 (>= 6,742 cm2) PMax = 0.156 * A + 151 PMax = 0.02418 * A + 151 Table 2: Version 3 Energy Star Active Power Limits Other countries have or are considering changes to their energy regulations to drive the adoption of more power efficient TV products. For example, the Japan Top Runner program takes a holistic approach which considers total energy consumption (kWh/year) on an annual basis assuming 4.5 hours of active use per day. This focuses the attention of TV manufacturers on methods to optimize their system architectures for both active and standby power consumption. Further details of the regional approaches to energy requirements for TVs can be 7 accessed by referring to appendix. Finally TV manufacturers are starting to market the green aspects of their products to highlight and differentiate their offerings and appeal to consumers who are concerned about the rising cost of energy. While improvements in active power go beyond the power supply, and include the display, backlight source, video and audio signal processing, and control architectures, the HV-LIPS architecture in this reference design is designed from the ground up to save power over the traditional architecture. Moreover it is designed to reduce the total system cost at the complete bill of materials level. Critical Design Objectives Input Voltage: Universal input 85-265 V ac, 47-63 Hz System Supply y y • • • • • Active Power Factor Corrected, IEC61000-3-2 Compliant Maximum steady state power 50 W, 60 W Peak 12 V / 4 A Peak 5 V / 2.5 A Peak 24 V - MOSFET gate drive bias Flexibility to be modified to support other voltage/current configurations Standby Pin< 400 mW with 50 mW load (5 V at 10 mA) Inverter Supply • • • • • 100 W Capable Strike voltage > 1500 V ac, Operating Voltage >800 V ac Fixed frequency inverter adjustable between 40-80 kHz Digital and Analog dimming capable Capable of synchronization to video clock source PFC Stage The heart of the High Voltage LIPS architecture is the active PFC front-end boost stage. First, it allows the design to meet the harmonic content requirements of IEC61000-3-2 which applies to power supplies with input power above 75 W. Secondly, it provides a regulated 400 V dc high voltage rail for the inverter section. The inverter utilizes the Microsemi LX6503 backlight control IC which is configured in a fixed frequency resonant full bridge topology. The backlight controller manages the power conversion process and provides all the necessary control functions to regulate the current to an array of CCFL lamps including the strike and dimming functions necessary for the LCD-TV. Beyond powering the backlight, the PFC also provides power to an isolated flyback switch mode power converter which generates all the necessary voltage rails to power the digital and analog circuitry that perform the control, interface, signal processing, and audio amplification functions within the LCD-TV. The 8 power required for this block can vary from 30 – 60 W depending on the set of features and functions that the LCD-TV performances. To simplify and reduce the overall complexity of the power conversion stage, a proprietary high efficiency flyback controller (NCP1351) has been selected which eliminates the need for a dedicated power standby power supply for most LCD-TV applications. The NCP1351 was selected because it utilizes a quasi fixed ON time control scheme which reduces the switching frequency of the flyback converter as the load requirements are reduced. The two additional switches (placed on the secondary) disconnect the main power loads to eliminate parasitic losses in standby mode. In summary, the architecture combines a front end power factor correction stage with an optimized flyback stage which eliminates the need for a dedicated standby power supply and a highly efficient, full featured inverter with current balancing to drive the CCFL lamps which backlight the LCD-TV panel. All these functions are integrated on a single PCB which includes the JIN-current balancers to provide a complete power solution. EMI filter The input stage consists of a common mode filter (L5) combined with a differential filter composed of L1 (150 µH) and filter capacitors C1 and C3 (2 x 470 nF) which have been added to filter the low frequency EMI due to the discontinuous mode PFC. Varistor RV1 is used to suppress high energy pulses and mains surges which may disturb overall operation. Resistors (R15-R20) have been added to discharge C18 in a reasonable time when the mains power is disconnected. This has a minor impact on standby consumption by increasing the power by 59 mW at 230 V ac. A mains voltage is provided to the flyback controller to allow it to start up directly from the line and avoid increased power dissipation during standby. 9 2 BD1 + 1 GBU806 3 C1 0.47uF 450V RV1 C5 Y 1nF C9 L1 150uH 4 C3 0.47uF 450V TVR10471KSY C6 Y 1nF X2 100nF 275V L5 CFS24 - 2mH RV5 eclat RV4 eclat C18 R15 150K R16 150K R17 150K R20 150K R19 AC Line - For PWM start 150K 1 150K 275V 1 R18 X2 1uF 2 J2 A 2 J1 A F1 FUSE 4A 250V (Axial Lead) L FG FG N CN1 4333-W05ST Figure 2: AC Input Stage 10 Control Approach The NCP1606B is a PFC controller designed to operate in variable frequency critical conduction mode (CrM) which is the most appropriate solution for 150 W (< 180 W): • • • The discontinuous operation mode does not require a hyper fast diode with trr < 25 ns (with higher Vf) but allows the use of the latest diodes developed by ON Semiconductor for discontinuous mode PFC circuits. The new MUR550 has a Vf < 0.98V for 5A @ 150°C which provide an improved efficiency for this 520 V diode which provide 20% of margin for the 410 V PFC output. In CrM, the next switching cycle is initiated when the boost inductor current reaches zero. This control method means that the frequency inherently varies with the line input voltage and the output load. For detailed information on the operation of CrM Boost converter for PFC applications, please refer to AND8123 at www.onsemi.com. D1 L1 150uH R4 27K C3 0.47uF 450V 2 11 7 8 L2 1N5406(DO-201) D2 MUR550APF(DO-201) RT1 NTC 2R5 PFC_OUT TF2815 - 150uH R24 68 R2 1M3 1/4W 2 Q1 STP11NK50ZFPN R5 68 8 ZCD VCC DRV Ctrl 7 R25 470 6 CT GND FB CS C7 10nF 630V 3 1 R6 1M3 1/4W 1 + C8 68uF 450V + BC856ALT1(SOT23) C11 100nF 2 C12 3 Q2 390nF R11 3 5 D3 MMSD4148 R8 68 2 IC1 NCP1606B C10 68uF 450V R9 10K R10 1M3 1/4W 56K 1 4 R12 220 + C13 47uF C14 100nF C16 1nF R26 680 C19 220pF R13 24K9 R14 0.10 2 W ZD1 1N4733A 5.1V PFC_GND PFC_VCC Figure 3: PFC Stage Pin 1 (FB) senses the boost output voltage through the resistor divider formed by R2, R6, R10 and R13. (The NCP1606B allows 4 time higher impedance than NCP1606A for the same Over Voltage Protection: thus reducing parasitic standby power consumption). This pin is the input of the error amplifier, whose output is pin 2 (Ctrl). A combination of resistor R11 and capacitors C11 and C12 between those pins form a compensation network that sets the bandwidth of the converter. For good power factor, this bandwidth is generally below 20 Hz. Capacitor C16 is connected to pin 3 (Ct) to set the on time for a given control voltage. The added resistor R25 in series with C16 provides an offset which allow further reduction of Ton min to provide better stability during light load and high 11 mains input voltage. Additional resistors from the input voltage to Ct could improve the power factor performance but in this application it is not necessary. Moreover they would increase power consumption in standby mode. CS (pin 4) provides cycle by cycle over current protection. This is accomplished with an internal comparator which compares the voltage generated by the switch current and Rsense (R14 through divider R12 and R26) to an internal reference. The NCP1606B has a lower current sense threshold of 0.5 V (compare to 1.7 V for the NCP1606A) to reduce Rsense power dissipation. The added capacitor C19 filters any switching spikes which may impact the operation of the current sense input. Zener ZD1 is added to protect R14 in case of short circuit of the power switch Q1 and avoid damage to the controller with an open power connection. Pin 5 (ZCD) senses the demagnetization of the boost inductor. The next driver switching cycle begins when the voltage at this pin rises above 2.1 V (typical) and then drops below about 1.6 V (typical). A resistor (R4) from the zero current detection (ZCD) winding limits the current into this pin. By pulling this pin to ground, the driver pulses are disabled and the controller is placed in a low current standby mode. The NCP1606B features a powerful output driver (pin 7). This driver is capable of switching the gates of large MOSFETs in an efficient manner but to reduce EMI with a long PCB lead trace and high di/dt switching an added PNP transistor Q2 has been added which is placed as close as possible to the power switch Q1. Additionally, the driver incorporates both active and passive pull-down circuitry to prevent the output from floating high when Vcc is off. Pin 8 (Vcc) powers the controller. When Vcc is below its turn on level - Vcc(on), typically 12 V dc - the current consumption of the part is limited to < 50 uA. Vcc is directly supplied from the flyback converter through signal transistor Q108 controlled by the optocoupler PC101 which is OFF in Standby mode: • • • Both Vcc (Flyback and PFC) are compatible The PFC is switching OFF so that the flyback is directly supply by the mains voltage without boost operation in Standby mode This approach improves further standby power performance thanks to the two stage SMPS system Design Procedure The design of a CRM Boost PFC circuit has been discussed in several ON Semiconductor application notes (see appendix). This section will briefly go through the design procedure for a 400 V, 180 W converter based on the NCP1606B PFC controller. A design tool, which gives these equations and results, is available at www.onsemi.com. 12 Step 1: Define the boost parameters Minimum AC Line Voltage VacLL Maximum AC Line Voltage VacHL Line Frequency fLINE Boost PFC Output Voltage Vout Maximum Output Voltage Vout(max) Boost Output Power Pout Minimum Frequency f(min) Estimated Efficiency η 88 264 47-63 400 430 170 90 95 Vrms Vrms Hz V dc V dc W kHz % Step 2: Calculate the Boost inductor and peak currents The inductor’s peak current is greatest at full load and low line. The value is calculated with eq 1: 2 ⋅ 2 ⋅ Pout = 5.8 A (1) Ipk (max) = η ⋅ Vac LL Now, the maximum boost inductor can be calculated: 2 ⋅ Vac LL ⋅ ( Vout − Vac LL ) 2 L≤ = 164μH Vout ⋅ Vac LL ⋅ Ipk (max) ⋅ f (min) 2 (2) A value of 150 µH was selected. The fmin may be considered high but this allows the use a small / cost effective PFC coil without major impact on both efficiency and EMI. Step 3: Size the power components The power components must be properly sized for the necessary current and voltages which they will experience. 1. The Boost inductor, L The inductor’s peak current is greatest at full load and low line. The value is calculated with eq 1: Icoil RMS = 2 ⋅ Pout 3 ⋅ Vac LL ⋅ η = 2.35 A (14) An ER28 core was selected as it is a high volume commonly available product with a total height < 23 mm. The 150 µH is build with 55 turns of 0.10 mm x 70, is able to manage up to 7 A for L > 80% @ 100°C with limited power dissipation thanks to the very good wire. The auxiliary winding for ZCD has 6 turns of 0.22 mm wire. The reference of the coil is JLC2832 and is available from Shenzhen Jewel Electric. 13 2. The Boost Diode, DBOOST D2 Id MAX (rms ) = Pout 4 2⋅ 2 = 1.2 A ⋅ ⋅ π 3 η ⋅ Vac LL ⋅ Vout (15) The MUR550APF, axial type in DO-221 was selected as it has a much lower Vf than standard ultra fast diodes and is specially designed for CrM / DCM PFC, thus improving the boost stage efficiency without cost increase. 3. The MOSFET, Q1 I M (rms) = 4 ⎛ Pout ⎞ ⎟ ⋅⎜ 3 ⎜⎝ η ⋅ VacLL ⎟⎠ 2 ⎡ ⎛ 8 ⋅ 2 ⋅ VacLL ⎞⎤ ⎟⎥ = 2 A ⋅ ⎢1 − ⎜⎜ ⎟ ⎢⎣ ⎝ 3 ⋅ π ⋅ Vout ⎠⎥⎦ (16) The MOSFET will see a maximum voltage equal to the Vout overvoltage level (430 V dc for this example). If 90% derating is used for the MOSFET BVDSS, then a 500 V FET is necessary to give adequate margin. A STP11NK50ZFPN with 11 A capability and an RDSON < 0.52R @ 10 A was selected to minimize power dissipation. This power MOSFET is housed in a TO220FP and is mounted on a heat-sink to improved power dissipation. 4. The sense resistor, RSENSE RSENSE = Vcs(lim it ) = 0.087 Ω Ipeak (17) For the NCP1606B, Vcs(limit) = 0.5 V (typ) To simplify design / procurement issues, a standard 0.1R with resistor divider (R12 & R26) can be used to adjust the current limit to the desired threshold level. PRsense = I M (rms) 2 ⋅ RSENSE = 0.4 W (18) 5. The bulk capacitor, CBULK 32 ⋅ 2 ⋅ Pout 2 2 − (I LOAD (rms) ) = 1.13 A Ic(rms) = 2 9 ⋅ π ⋅ Vac LL ⋅ Vout ⋅η (19) The bulk cap value was calculated to give acceptable ripple voltage while avoiding triggering the output over voltage protection. To avoid expensive low profile Snap-in types and stay below the 25 mm height maximum of this design, two standard capacitors (C08/C10) are used in parallel and mounted flat on the board to achieve the target ripple current while offering a cost effective solution. 14 The capacitors selected are KXG 68µF 450 V 18*20 or 18*25 mm 0.58 A rms from Nippon Chemi-con. Step 4: Supply Vcc to Bias the PFC Generally, the most straightforward way to bias the PFC chip is with a resistor connected between the AC input and Vcc (pin 8) to charge the Vcc cap. For the LCD-TV application, there is a flyback converter that is always on even when the TV is in standby. As a result, the PFC controller is supplied directly from the auxiliary winding of the flyback converter thought and optocoupler which switches OFF the PFC when the TV is powered down and enters standby mode. Q108 BC846ALT1(SOT23) 1 3 R147 100 VCC1 R148 4K7 2 PFC_VCC 3 4 R153 10K PC101B SFH817A R154 100K PFC_GND Figure 4: PFC Bias Control When the TV set must be started, the microprocessor provides an ON signal which drives the optocoupler PC101 on; so that the flyback Vcc is apply to the PFC Vcc through Q108. When the Vcc voltage exceeds the Vcc(on) level (12 V dc typical), the internal references and logic of the NCP1606 turn on. The controller has an under-voltage lockout (UVLO) feature which keeps the part active until Vcc drops below about 9 V dc. This hysteresis is large enough to handle the flyback Vcc variation under normal load variation. Step 5: Limit the Inrush Current The sudden application of the mains to a PFC circuit can result in a large in-rush current and voltage overshoot. To resize the power components to handle this transient event is cost prohibitive. Furthermore, since the PFC is configured in a boost topology, the controller cannot do anything to protect against this since the voltage is applied through the inductor and rectifier to the output capacitor of the boost converter. To address this, a rectifier D1 is added from the input voltage to the output voltage bypassing the inductor and diverting the startup current to the bulk capacitor. The bulk capacitor is then charged to the peak AC line voltage without resonant overshoot and without excessive inductor current. After startup, DBYPASS will be reverse biased and will not interfere with the boost converter. Moreover, to further reduce the in-rush current which can be critical for the mains fuse (limited I2xt), a 2.5R NTC (negative temperature coefficient) 15 thermistor (RT1) is placed in series with the mains connection (before the bridge) to limit the in-rush current. The resistance value drops from a few ohms to a few milliohms as the device is heated by the I2R power dissipation. Alternatively (as used in our application), this NTC can be placed in series with the boost diode. This improves the active efficiency as the resistor only sees the output current-instead of the input current (particularly interesting for low US mains supply). However, in this configuration, NTC resistor may not be able to fully protect the inductor and bulk capacitor against in-rush current during a brief interruption of the mains, such as during line drop out and recovery. Test Results For figures 5-6, the signals illustrated in plots from top to bottom are as follows • • • • STANDBY +5 V PFC VCC PFC-OUT 5V/div 5 V/div 10 V/div 200 V/div 20 ms/div 1 ms/div (expanded scale) Figure 5: Starting phase from Standby to ON 1 s/div Figure 6: Switching OFF from ON to Standby 16 Mains current 0.5 A/div F min 208 kHz (1 µs/div) Vin = 110 V ac, Pout = 75 W Fmax 295 kHz (1 µs/div) Figure 7: Input AC Current, PFC Switch Frequency (Drain Voltage of Q1) Mains current 0.5 A/div Fmin 297 kHz (1 µs/div) Vin = 230 V ac, Pout = 75 W Fmax 450 kHz (1 µs/div) Figure 8: Input AC Current, PFC Switch Frequency (Drain Voltage of Q1) Mains current 1 A/div Fmin 105 kHz (2 µs/div) Vin = 110 V ac, Pout = 180 W Fmax 158 kHz (2 µs/div) Figure 9: Input AC Current, PFC Switch Frequency (Drain Voltage of Q1) Mains current 1 A/div Fmin 158 kHz (2 µs/div) Vin = 230 V ac, Pout = 180 W Fmax 562 kHz (0.5 µs/div) Figure 10: Input AC Current, PFC Switch Frequency (Drain Voltage of Q1) 17 Flyback Stage for Control, Signal & Audio Power With a dedicated dc-ac converter to supply the lamps, the flyback SMPS is used to provide power to all the analog and digital blocks use for control, signal processing and audio amplification. With a limited overall requested power (< 60 W), it is possible to consider a flyback with standby mode without the need of a dedicated standby SMPS which improves the overall cost effectiveness of the solution. To achieve such a feat requires a controller architecture that is optimized for high efficiency at light load conditions. NCP1351 variable OFF time PWM controller The NCP1351 is a variable frequency controller implementing a fixed peak current (quasi-fixed-Ton) together with a variable off time technique. It is tailored for low power applications, mainly off line flyback power supplies below 80 W. Based on a fixed peak current technique, the NCP1351B decreases its switching frequency as the load becomes lighter. As a result, a power supply using this solution naturally offers excellent no-load power consumption, while optimizing the efficiency under other loading conditions. As the frequency decreases, the peak current is gradually reduced to approximately 30% of the maximum peak current to prevent transformer mechanical resonance. The risk of acoustic noise is thus greatly diminished while achieving overall good standby power performance. 18 R100 1M 1/4W AC Line - For PWM start R101 1M 1/4W R102 1M 1/4W T100 ER28L 1 PFC_OUT R104 33K 2W D101 MUR160 R108 0.47R 2W PFC_GND C100 10nF 250V 3 11 P VCC1 4 R112 3K3 PC100B SFH817A 3 R114 0 1 2 C112 470nF R121 2K7 3 IC100 NCP1351B FB Vcc CT Timer CS Latch D104 MMSD4148 R116 100 6 7 C114 100nF D105 BAV21 C142 220uF/35 V 8 C113 100nF R117 47 + 12 6 + C116 10uF/35 V + C115 10uF/50 V R118 10 5 ZD101 1N5929B 22V P 4 C117 270pF GND Drv 5 C118 100pF R125 1K C119 100nF 9 10 P D110 MMSD4148 C121 270pF R129 100k R130 150k 7 8 OPP CKT C140 22pF R134 27 D113 MMSD4148 Q106 STD3NK60ZT4 2 R170 1K Q107 BC856ALT1(SOT23) R136 47k 3 1 P Figure 11: Primary side of the flyback converter A 270 pF capacitor (C117) connected on pin 2 (Ct) defines the maximum frequency without feedback information. An adjustable timer permanently monitors the feedback activity and protects the supply in the presence of a short circuit or overload. The feedback is completely independent of the coupling between transformer windings. Once the timer elapses (capacitor C114 100 nF connected on pin 8 “Latch” reaches 5 V dc), the NCP1351 stops switching and tries to restart. On the NCP1351A, the protection is latched, and on the NCP1351B it has auto-recovery which is optimum for LCD-TV applications. The Latch fault input (pin 7) is available to provide additional protection functions such as over-voltage protection (OVP) by sensing the primary auxiliary fly-back voltage. A fault is detected when pin 7 exceeds 5 V dc. The OVP detect signal is generated when the zener diode ZD101 starts to conduct current indicating the OVP fault. Note that neither the NCP1351A & B will auto-restart when the fault is removed due the latch function on pin 7 as a result the AC power must be disconnected to reset the NCP1351. 19 The internal structure features an optimized arrangement which results in an extremely low start-up current, a fundamental consideration when designing a power supply to achieve low standby mode. The starting resistors R100-101-102 (3 x 1MR) are connected directly to the mains to limit power consumption in standby. To reduce the starting time, the above starting resistors charge a small 10 µF capacitor (C115). Once the SMPS has started up, the voltage from the auxiliary winding supplies the Vcc pin through diode D105. To avoid any startup issues under light switching, a larger capacitor C142 is connected through the isolation diode D104 to allow a smaller capacitor value to start the IC quickly. The negative current sensing technique minimizes the impact of the switching noise on the controller operation and allows the user to select the maximum peak voltage across the current sense resistor R108. Its power dissipation can be optimized and adjusted by R112. Lossless mains over-power-protection is provided through a network of R130, C121, D110 and R129 which is connected to the auxiliary flyback winding. Finally, the bulk input ripple ensures a natural frequency dithering which smoothes the EMI signature. To provide better noise immunity in the PCB layout, an additional RC network R170 & C140 between DRV pin 5 and CS pin 3 provides leading edge blanking (LEB) which avoids instability due to noise on CS. While this may not normally be required with a negative current sense, in this case it improves performance without shortening switching cycles. Due to the negative current sense, the LEB is implemented with positive information from the DRV signal. The feedback pin 1 (FB) operates based on a current signal that allows a direct connection to the optocoupler. C112 and R121 are used to define the regulation loop response time. Although the Driver pin 5 (DRV) is capable of driving directly the Power MOSFET Q106, an additional PNP bipolar transistor Q107, placed very close to the MOS, is used to switch OFF the MOSFET and avoid high di/dt on long PCB tracks thus reducing EMI generation. As illustrated, the 8 pin SOIC based NCP1351 provides all the basic SMPS control functions and give the user the option to implement numerous protection features to ease the design of a rugged and reliable low power switching power supply. ON Mode Operation Since the controller operates in quasi-fixed-Ton the switching frequency does vary with load. For light loads, the flyback converter operates in discontinuous mode (DCM). As the load increases the frequency increases until the controller enters continuous conduction mode (CCM) which is optimal for highest efficiency. The SMT (Switch Mode Transformer) has been designed to operate in both DCM and CCM to maximize performance. In CCM higher inductance is required which increases the number of turns in the transformer, this mode provides better cross regulation due to the lower voltage per turn which allows better adjustment of the multiple output voltages and 20 increase the coupling between all secondary windings and between primary to secondary. This avoids a dead time which improves overall current form factor and reduces overall peak current in the system (MOS, transformer, diodes and capacitors). A possible drawback of approach is the recovery time of secondary rectifier power diodes, but this issue does not exist here since all secondary diodes use schottky technology in view of the output current required. The primary / secondary turn’s ratio has been choosing allow the use of high volume cost effective 600 V MOSFET. The transformer has a primary inductance of 2.5 mH which allows it to be in DCM for low power and enter CCM around 35 W output. The primary current is around 1.6 A for 60 W. Build on an EER28L, the transformer design consists of the following: y y y y Primary has 2 x 55 turns Auxiliary Vcc has 26 turns 5V secondary has 9 turns 12V secondary build on top of 5V has 9 turns The reference of the transformer is BCK-28-1050 and is available from Shenzhen Jewel Electric. Cross Regulation Considerations Achieving good cross regulation is a design challenge in LCD-TV applications as the tolerances are tight, typically +/- 5% and the dynamic operation can vary widely due to the high dynamic range of the audio amplification and the variety of signal processing power load depending on the input video source. Below is the typical output voltage and load range for the baseline reference design (SMPS1). • • +5V from 0 to 2.5A +12V from 0 to 4A To improve the overall cross regulation performance, the +5V diode is connected in the ground (GND) of the winding with +12 V on top of the 5 V winding. The drawback of that is that both the +5V and +12V current go through both the 5 V diode and winding (increasing power loses mainly in the +5V diode), the advantage of this configuration is that the 12 V only sees 7 V of variation. An additional advantage of this construction is that the reverse voltage of the 12 V diode is limited by the same difference. Note the transformer was designed with a low turns ratio thus reducing the effective current but increasing the reverse voltage of the diode. In the reference design, a 100 V is used to ensure adequate design margin and avoid the possibility of any reliability issues. This also simplified procurement as the same T0-220 MBR20100CTG diode is used in both outputs. 21 Flyback Waveforms Drain voltage 200 V/div Drain current 1 A/div Figure 11: 25 kHz Operation (DCM) PFC = 400 Vdc, 5 V@ 0.5 A and 12 V @ 0.5 A Drain voltage 200 V/div Drain current 1 A/div Figure 12: 30 kHz Operation (CCM) PFC = 400 Vdc, 5 V@ 1 A and 12 V @ 2 A Drain voltage 200 V/div Drain current 1 A/div Figure 13: 43.8 kHz Operation (CCM) PFC = 400 V dc, 5 V@ 2 A and 12 V @ 4 A 22 5 V diode D111, Vrr = 40 V Max 10 V/div 10 µs / div 12 V diode D107, Vrr = 52 V Max Figure 14: 17 W load: 5 V@ 1 A and 12 V @ 1 A (DCM mode) 5 V diode D111, Vrr = 35 V Max 10 V/div 4 µs / div 12 V diode D107, Vrr = 50 V Max Figure 15: 52 W output: 5 V @ 2 A and 12 V @ 3.5 A (CCM mode) Standby Mode Considerations The architectural approach used in the NCP1351 is optimized to achieve optimal performance for light load efficiency. As a result, a dedicated standby flyback converter is not required in this reference design. In standby mode, there is limited power required to keep the microprocessor and control circuitry biased when the LCD-TV is switched off. To achieve this low standby performance, it is necessary to have additional switches on the secondary side to disconnect both 5 V dc (Q113) and 12 V dc (Q114) so that only the 5 V dc standby power rail remains connected. Those two switches are supply with VS4 from a charge pump (CC103, D100, ZD100 and C101) to avoid an additional winding on the transformer T100. This available higher voltage allows the use of NMOS switches instead of PMOS switches for the high side switches power rails. Avoiding PMOS switches reduces cost and solved additional safety issues in the event of an overload or output short circuit since the PMOS switches could go out of saturation and enter 23 the linear region resulting in increased power dissipation and possible overheating. T100 ER28L C103 10nF 250V 1 F100 0.47 1/2W VS4 D100 BAV21 ZD100 1N5929B 15V + C101 10uF/50V J103 A J100 A + C106 1000uF/16V R113 7.5K 1/4W 2 1 11 2 3 1 VS3 VS2 1 L101 1 2 + 3 C109 1000uF/16V 10uH 2 Q114 3 2 NTD3055-094T4G DPAK +12V R119 10K + C110 1000uF/16V 1 12 6 + R120 20K Vref D107 MBR20100CTG (TO220) 5 Q103 BC846BDW SOT363 C143 4.7nF R124 470 +12V C111 330uF/16V STB D108 MMSD4148 R122 4K7 R127 2K2 J104 2 1 2 1 C122 1000uF/16V + L102 10uH 2 2 Q113 3 NTD14N03R DPAK +5V R131 10K + C123 1000uF/16V 1 7 8 +5V VS1 3 +5VSB +5VSB* + C138 330uF/16V D111 MBR20100CTG (TO220) 9 10 1 + C126 330uF/16V Figure 16: Secondary side rectification of the Flyback converter The charge pump voltage VS4 is always available (even in Standby mode). There is no need for a switch to disconnect in Standby as the charge pump provides a fixed amount of energy per cycle and thanks to the very low frequency operation in Standby, the power is very limited, VS4 is very low and does not have a appreciable impact on overall Standby power efficiency. 24 D124 0R STB +5VSB* R158 2K2 R159 2K2 1 R157 1K STANDBY PC101A SFH817A D121 MMSD4148 2 R161 100K Q111 BC846ALT1(SOT23) 6.3V R163 4K7 Q112 BC846ALT1(SOT23) R166 4K7 VS1-OVP +5VSB* ZD103 1N4733A 5V1 (DO-41) R165 470 R167 470 R168 470 C137 10nF Figure 17: Secondary side Standby / ON control of the Flyback The system microprocessor generates an open collector “STANDBY” signal that pulls R159 low when the system is in standby. When the STANDBY signal is released, Q111 is switched on to drive optocoupler PC101 which allows the PFC controller to be biased on (as explain in PFC part). The state of Q111 also controls signal “STB” which goes up in Standby. The STB is applied to diode D108 which provides a higher voltage than the regulated one on comparator Q103 which drives down the gate of Q114 to switch OFF the +12 V. The ‘STB” going down in ON mode, allowing the +12 V to be switch ON as a supply from the charge pump VS4. The +5 V switch Q113, is directly drive by the +12 V. Typical Standby performance < < < < 0.3 W 0.4 W 0.5 W 1W (230 V ac) (230 V ac) (230 V ac) (230 V ac) / / / / 0.2 W 0.3 W 0.4 W 0.9 W (110 V ac) (110 V ac) (110 V ac) (110 V ac) no load 5 V dc @ 10 mA (50 mW) 5 V dc @ 20 mA (100 mW) 5 V dc @ 96 mA (480 mW) Note that the standby performance is achieved without the need of a costly relay to disconnect the rest of the supply where additional parasitic power losses occur. This standby performance is below the levels required to achieve < 1 W standby regulatory requirements. Note that further improvements could be achieved with modifications of the clamping network. To protect the MOSFET and prevent the voltage to be higher than the BVdss, the existing RC network (R104 & C100) could be replaced by a 200 V TVS to clamp the overshoot. This will reduce the 25 standby power, as there is no power loss in the clamping network under no-load / light load conditions. If ultra low standby is required then a dedicated flyback could be added which would increase the overall system cost. 90 V ac 50 mW output 3.76 kHz 90 V ac 500 mW output 12.5 kHz 230 V ac 50 mW output 2.9 kHz 230 V ac 500 mW output 9.35 kHz Figure 18: Flyback switching waveforms under different load conditions Higher Standby power capability solution In standby, the SMPS is operating in the audio range. As a result depending on the transformer construction and mechanical design there is the possibility of some audible noise. The most sensitive range for most people is in the 7 – 13 kHz range. This specific design has been implementation for a nominal standby load of 50-75 mW so that the frequency in standby is < 5 kHz. If the required standby power is higher, the converter may work in the critical audible range. To avoid this issue, we can change the current limit in standby mode to reduce the energy transferred by cycle so that frequency increases above the sensitive range (>15 kHz) to provide the overall requested power. This increased switching frequency does have a minor negative impact on efficiency in standby. The section describes how the standby current and frequency can be adapted to avoid the most critical 7 – 13 kHz range in standby. 26 R100 1M 1/4W AC Line - For PWM start R101 1M 1/4W R102 1M 1/4W T100 ER28L 1 PFC_OUT R104 33K 2W D101 MUR160 R108 1R 2W PFC_GND C100 10nF 250V 3 11 P VCC1 4 R112 2K2 PC100B SFH817A 3 R114 0 1 2 C112 470nF R121 2K7 3 IC100 NCP1351B FB Vcc CT Timer CS Latch D104 MMSD4148 R116 100 6 7 D105 BAV21 C142 220uF/35 V 8 C113 100nF R117 47 C114 100nF + 12 6 + C116 10uF/35 V + C115 10uF/50 V R118 10 5 ZD101 1N5929B 22V P 4 C117 270pF GND Drv 5 C118 100pF R125 1K C119 100nF 9 10 P D110 MMSD4148 C121 270pF R129 100k R130 150k 7 8 OPP CKT C140 R134 27 22pF D113 MMSD4148 Q106 STD3NK60ZT4 2 R170 1K 1 Q107 BC856ALT1(SOT23) R136 47k 3 R169 33K P Q108 BC846ALT1(SOT23) 1 3 R147 100 VCC1 R148 4K7 2 PFC_VCC 3 R153 10K 4 PC101B SFH817A R154 100K PFC_GND Figure 19: Modifications of the Flyback to increase standby frequency The Rsense resistor R108 is increased from 0.47R to 1R which provides more voltage information and reduces the current (typically 1/2) in standby mode. To maintain the same operating current in ON mode, a positive current from R139 is generated when PFC_VCC is on which will compensate for the larger negative voltage developed by the larger sense resistance R108: The variation of this voltage between both ON and standby mode allows easy configuration. The changes were minor as R112 was reduced from 3K3 to 2K2 and R139 (33 K) was added. This provides up to 60 W power capability in ON mode with the same 27 current limit. The standby operating frequency is now 16.6 kHz with 160 mA in the Flyback Power MOS which is an increase from the 7 kHz in the original solution. This changes was implemented and tested and the results were excellent despite a small impact on efficiency (+ 50 mW on mains input compare to previous lower frequency mode). 200 V/div, 200 mA/div, Figure 20: 10 µs/div 200 V/div, 200 mA/div Switching Waveforms with 400 mW output, Pin = 1 W Vin = 230 Vac, Fsw = 16.6 kHz 100 V/div, 200 mA/div, Figure 21: 1 µs/div 10 µs/div Switching Waveforms with 400 mW output, Pin = 810 mW Vin = 110 V ac, Fsw = 27 kHz Configuring the Flyback for other output voltages The required voltage rails and currents needed for the LCD-TV signal processing, audio and standby power are driven by the system architecture. As a result the reference design incorporates sufficient flexibility to support multiple output configurations with simple bill of material changes. The NCP1351B flyback 28 design includes flexibility to support up to 4 unique voltage rails. The standard configuration (SMPS1) that the reference design uses has a 5 V dc and 12 V dc output as well as a 24 V dc Driver rail. The table lists numerous alternate configurations that can be realized to support different power schemes including a variety of different audio amplifier output rails range from 12 to 24 V dc. The below table provides most of the possible solutions. In all cases, the overall power must be limited to < 60 W and < 4 A for both VS1 and VS2 and < 1.5A for the VS3 output. The current on V Dr is limited to approximately 5 mA according to the charge pump components used. SMPS1 SMPS2 SMPS3 SMPS4 SMPS5 SMPS6 SMPS7 SMPS8 SMPS9 V Dr VS3 24V 36V 26V 24V 36V 24V ON 14V ON 12V ON 24V ON 24V 28V 15V ON 24V 36V 24V ON VS2 12V ON 12V ON 12V ON 5V ON 12V ON 12V ON 12V ON 5V 5V 5V 5V 3V3 3V3 Standby Standby 12V 12V 5V VS1 ON + ON + ON + ON + ON + LDO LDO ON + ON + from Standby Standby Standby Standby Standby Standby Standby from 12V 12V Table 3: Standard and alternative voltage configurations 29 T100 ER28L C103 10nF 250V 1 F100 0.47 1/2W C105 1nF 500V 10uH 2 2 Q100 3 C108 1nF 500V 2 VS2 C109 1000uF/16V L101 1 10uH 2 2 3 D102 MMSD4148 R110 NA Q102 Q114 NTP18N06G(TO220) NTD3055-094T4G DPAK +12V R119 10K + C110 1000uF/16V + R120 20K C111 330uF/16V Vref Q103 BC846BDW SOT363 D107 MBR20100CTG (TO220) R124 D108 MMSD4148 R122 4K7 470 J104 1 2 1 1 + + C123 1000uF/16V L102 1 F101 1 NA + C138 330uF/16V Q104 NTP18N06G(TO220) Q113 NTD14N03R DPAK 3 10uH 2 2 R131 10K + C124 1000uF/16V 1 0.47 1/2W +5V +5V + C126 330uF/16V R132 NA Vref R128 100 1/2W Q105 BC846BDW SOT363 R135 NA STB R133 NA 1 C125 100nF D112 MMSD4148 IC102 LM7805C IN GND C120 1nF 500V +5VSB* J102 NA OUT 3 7 8 C122 1000uF/16V +5VSB J105 2 VS1 1 2 2 D111 MBR20100CTG (TO220) 3 2 R127 2K2 J101 NA +12V STB C143 4.7nF R126 NA 9 10 +24V R113 7.5K 1/4W 3 5 C104 220uF/50V STB C144 4.7nF R111 NA C106 1000uF/16V + 1 + R107 NA 1 6 R106 NA 1 1 Q101 BC846BDW SOT363 J100 NA + D106 MUR420 12 +14V or +24V NTD14N03R DPAK Vref 2 1 J103 NA R115 100 1/2W L100 1 VS3 D103 MUR420 11 + C101 10uF/50V 2 3 +30V R103 NA ZD100 1N5929B 15V R109 100 1/2W F102 0.47 1/2W VS4 D100 BAV21 2 +5VSB C139 100nF Figure 22: Schematic illustrating range of flexibility in configuring the secondary side rectification of the flyback converter SMPS 1 to 5 are similar designs with 2 or 3 output voltages with the added Driver output rail to drive all NMOS switches. If VS1 has only one switch Q104 for the standby, both VS2 and VS3 support a linear regulator (function explained below) on top of the discrete switch used for the standby. The third output VS3 is of particular interest when a higher voltage rail is required to power a dedicated audio amplifier. The VS4 has a limited current capability (charge pump solution) but if necessary, the voltage can be push up to 35 V to allow 30 V for tuner through the resistive drop on fuse F102. To be able to manage the strong load variation due to the wide audio amplifier dynamic behavior, the 12 V dc (VS2 of SMPS1) has been designed as a simple discrete regulator to avoid possible cross regulation issues: an additional discrete comparator forces the switch to operate in linear mode (not full saturated) when 30 the load becomes so small that the voltage can rise up toward the upper regulation limit. As a result of the transformer design and this discrete circuitry, the 12 V dc output of the SMPS configuration offers excellent load and cross regulation. R113 7.5K 1/4W VS4 VS2 L101 1 + 2 2 Q114 3 NTP18N06G(TO220) +12V R119 10K + C110 1000uF/16V 1 C109 1000uF/16V 10uH + R120 20K C111 330uF/16V Vref Q103 BC846BDW SOT363 C143 4.7nF R124 470 +12V STB R122 4K7 D108 MMSD4148 Figure 23: +12 V Discrete switch and linear regulator The dual transistor Q103 is use as an amplifier to compare information from the +12 V output to the Vref from the TL431 (IC101). This allows regulation on the +12V rail and forces the MOSFET to stay full saturated as much as possible under any condition. The MOSFET is housed in a DPAK so it has good power handling given the maximum current of the output rail. Finally an additional integrated linear regulator IC102 has been planned for SMPS6/7 to allow a simple low current standby supply from the VS1 (adjustable from 5 to 12 V). A modification of the regulation point (R161) in standby (see Figure 24) can reduce the VS1 supply voltage lower to reduce power dissipation across IC102 and improve standby efficiency. VS1 / 5 Von VS2 / 12 Von VS4 / P 230 V~ I 12 Von 0.1 0.5 1 1.5 2 3 4 ON with 0.32A on 5VStby I 5 Von 0.1 5.23 / 5.23 12.63 / 12.43 26.09 / 6.799 5.27 / 5.27 12.54 / 12.4 26.02 / 12.27 5.28 / 5.28 12.52 / 12.36 26.06 / 20 5.29 / 5.29 12.52 / 12.33 26.14 / 27.57 5.29 / 5.29 12.51 / 12.27 26.18 / 35 5.27 / 5.27 12.46 / 12.13 26.36 / 49.65 5.29 / 5.29 12.49 / 12.03 26.67 / 65.64 0.5 5.23 / 5.23 12.65 / 12.42 25.91 / 6.8 5.27 / 5.27 12.55 / 12.39 25.85 / 12.35 5.28 / 5.28 12.53 / 12.36 25.95 / 20.13 5.29 / 5.29 12.53 / 12.32 26.03 / 27.73 5.29 / 5.28 12.5 / 12.26 26.13 / 35.03 5.27 / 5.27 12.46 / 12.12 26.2 / 49.88 5.29 / 5.29 12.48 / 12.02 26.64 / 66.19 1 5.18 / 5.07 12.85 / 12.44 25.93 / 12.3 5.25 / 5.14 12.68 / 12.42 25.89 / 18.77 5.27 / 5.16 12.63 / 12.4 25.91 / 26.59 5.27 / 5.17 12.6 / 12.36 26.01 / 33.88 5.26 / 5.16 12.56 / 12.3 26.05 / 41.17 5.28 / 5.17 12.57 / 12.21 26.26 / 56.73 5.3 / 5.19 12.6 / 12.12 26.61 / 72.69 1.5 5.17 / 5 12.92 / 12.45 25.89 / 16.33 5.24 / 5.07 12.74 / 12.43 25.84 / 22.66 5.27 / 5.09 12.68 / 12.41 25.86 / 30.21 5.26 / 5.09 12.62 / 12.37 25.94 / 37.49 5.26 / 5.09 12.61 / 12.33 25.96 / 45 5.28 / 5.11 12.61 / 12.25 26.13 / 60.34 5.3 / 5.12 12.64 / 12.15 26.72 / 77.07 2 5.13 / 4.91 13 / 12.47 26.2 / 19 5.24 / 5.01 12.78 / 12.45 26.06 / 25.7 5.26 / 5.04 12.71 / 12.43 26.08 / 33.18 5.25 / 5.03 12.64 / 12.38 26.05 / 40.43 5.26 / 5.04 12.64 / 12.35 26.05 / 48.08 5.28 / 5.06 12.66 / 12.28 26.27 / 63.79 5.29 / 5.06 12.65 / 12.16 26.83 / 80.5 2.5 5.12 / 5.07 13.13 / 12.33 26.93 / 23.25 5.23 / 4.96 12.84 / 12.31 26.69 / 28.73 5.26 / 4.99 12.76 / 12.29 26.63 / 36.23 5.24 / 4.96 12.68 / 12.26 26.6 / 44.37 5.26 / 4.97 12.69 / 12.25 26.6 / 51.55 5.29 / 5.01 12.72 / 12.24 26.69 / 67.45 5.28 / 4.99 12.67 / 12.11 27.11 / 83.81 Table 4: +5V and +12V Output Performance over Load 31 The secondary regulation and safety circuit VS1 R137 220 +5VSB* 1 VS2 PC100A SFH817A 2 R138 1K R142 16K2 R144 6K19 C130 470nF R149 0 3 Vref 1 2 IC101 TL431ACLPRPG 1%(TO92) R172 4K7 R164 100K R155 2K49 D124 0R STB +5VSB* R158 2K2 R159 2K2 1 R157 1K STANDBY PC101A SFH817A D121 MMSD4148 2 R161 100K Q111 BC846ALT1(SOT23) Q112 BC846ALT1(SOT23) R166 4K7 6.3V R163 4K7 VS1-OVP +5VSB* ZD103 1N4733A 5V1 (DO-41) R165 470 R167 470 R168 470 C137 10nF Figure 24: +12V Secondary regulation and safety circuitry The regulation loop is controlled by a TL431 (IC101) and optocoupler PC100. To reduce consumption as much as possible in standby, the regulation circuit is supply by VS1 (5 V). Note the PCB has been designed with flexibility to allow regulation from any of the output voltages. In the standard configuration, SMPS1, both 5 V and 12 V are regulated with resistor dividers adjusted to have 2/3 on 5 V and 1/3 on 12 V. To compensate for voltage drops due to output filters and cables, the regulation point (reference pin 1 of IC101) is modified with resistor 32 R161. This has no impact during standby but during ON mode, R161 is in parallel with R155 to increase all output voltages. The secondary safety circuit provides Over Voltage Protection in the event of an open regulation loop. If the +5 V Standby output exceeds 6.3 V (nom) (5.1 (ZD103) + 1.2 (Vbe of Q102 following the resistor divider), the overall control circuit recognized the fault and forces the supply into STANDBY thus disconnecting the load, avoiding damage to the signal processing and reducing the power which helps to further increase the voltage to easily detect the issue on the primary and switch OFF the NCP1351 with the OVP and Latch protection (ZD101). To provide full design flexibility, OVP on each output voltage has been planned on the PCB with extra zener diodes (ZD104 on VS2 and ZD105 on VS3). The high performance of the transformer (CCM) combined with the NMOS switches, does not affect the series impedance during an output short circuit providing rugged short circuit protection. The primary Over Power Limitation time will be controlled by the timer and the converter will stay OFF until the next restart (for the auto-recovery NCP1351B). Flyback safety tests The following plots illustrate operation under unusual fault conditions that the power supply must handle during safety testing that are meant to simulate a possible failure in the field. A) + 12 V Output short circuit Figure 25 illustrates the switching behavior when a short is created on the 12 V output. The top waveform on the right is the 12 V output and it is being loaded from 1-8A (scale 5A/div). The next waveform is the drain voltage of Flyback MOSFET Q106 (scale 500 V/div). The bottom two waveforms are the 5 V Standby (5 V/div) and the drain current of Flyback MOSFET Q106 (1A/div). The plot to the left is a longer time frame and it clearly shows that the 45 ms fault timer being activated to disable operation. The third plot on the bottom shows an expanding view of the drain voltage and drain current of Q106 showing the current is limited in a cycle by cycle basis. 33 10 ms/div 10 µs /div 10 µs /div Figure 25: + 12 V Output short circuit behavior B) + 5 V Output short circuit Figure 26 illustrates the switching behavior when a short is created on the 5 V output. The top waveform on the right is the 5 V output and it is being loaded from 1-8A (scale 5A/div). The next waveform is the drain voltage of Flyback MOSFET Q106 (scale 500 V/div). The bottom waveform is the drain current of Flyback MOSFET Q106 (1A/div). The plot to the left is a longer time frame and it clearly shows that the 45 ms fault timer being activated to disable operation. In this plot the bottom waveform is the 12 V out and it clearly shows the output decaying after the timer is activated. The plot on the bottom shows an expanding view of the drain voltage and drain current of Q106 showing the current is limited in a cycle by cycle basis. 34 10 ms/div 20 µs/div 10 µs /div Figure 26: + 5 V Output short circuit behavior C) PFC behaviors with + 12 V or + 5 V Output short circuit Figure 27 illustrates the switching behavior of the PFC when either the 12 V or 5 V rail is shorted. The top waveform on the right is the 12 V output and it is being loaded from 1-8A (scale 5A/div). The next waveform is the drain voltage of Flyback MOSFET Q106 (scale 500 V/div). The bottom waveforms consist of the drain voltage of the PFC MOSFET Q1 (500 V/div) and the gated Vcc bias to the PFC stage that is controlled from the 5 V Standby output. The plot to the left is a longer timeframe view and shows the power supply trying to restart from Standby. As illustrated, after the first fault event is detected, the PFC is never restarted as the PFC Vcc will not rise up to the Vcc start level thanks to the coupling of the transformer. 35 1 s/div 10 ms/div Figure 27: PFC behavior with + 12 V or + 5 V Output short circuit D) Over Voltage Protection Operation The following test illustrates how the system protection operates if the regulation fails open. The first section illustrates the protection operation in the event that the fault occurs after the power supply has starting (in ON mode) and operating under normal conditions. When the regulation loop is opened in ON mode, the output voltages rise up. After 1.5 ms, the 5 V Standby reaches 7 V (typ) and the secondary Over Voltage Protection switches the system into Standby to protect the overall signal processing and the audio amplifier and speed up the primary OVP: This effect of this is demonstrated in Figure 28a and 28b. • • • • Both the 12 V and 5 V output start falling Both VS1 and VS2 rise as the load is removed The Vcc of the PFC decays after the “ON/OFF” optocoupler switches OFF After an ~ 2 ms, the primary Over Voltage Protection is activated and the NCP1351 controller immediately switches OFF the Power MOS For figures 28a, the signals illustrated in the plots (top to bottom) are as follows: y y y y VS2 (+12 V before switch Q114) +12 V +5 V VS1 (+5 V before switch Q113) – 10 V/div – 10 V/div – 5 V/div – 5 V/div 36 100 ms/div 2 ms/div (expanded scale) Figure 28a: Output voltage behavior for OVP event (Open regulation loop) For figures 28b, the signals illustrated in the plots (top to bottom) are as follows: y y y y 100 ms/div VS2 (+12 V before switch Q114) Vcc PFC Vcc Flyback Drain of Flyback MOSFET(Q106) – 10 V/div – 10 V/div – 5 V/div – 500 V/div 2 ms/div (expanded scale) Figure 28b: Output voltage of Vcc for OVP event (Open regulation loop) The other case occurs if the feedback loop is open at startup. In this scenario both output voltages will rise up. After ~ 7 ms (reference is now the starting point), the 5 V Standby reaches 7 V dc (typ) and the secondary Over Voltage Protection switches the system into Standby: • Both 12 V and 5 V output are going down (additional delay for the 5 V “supply” a longer time by the 12 V), 37 • • • Both VS1 and VS2 go up as the output power has been reduced The Vcc of the PFC is not going up as the “ON/OFF” optocoupler has been switched OFF before the PFC has been able to turn on normally After an additional ~ 4 ms, the primary Over Voltage Protection is activated and the NCP1351 controller immediately switches OFF the Power MOS Note, as seen in Figure 29, the time is longer than for the “ON” mode test above. This is due to the time required to charge the primary Vcc capacitors. As a result, the secondary rectified voltage reach a higher level before the system stops (Up to 19 V dc for VS2 and 9 V dc for VS1). 2 ms/div Figure 29a: PFC behavior for OVP event (Same signals as Fig 28a) 2 ms/div Figure 29b: PFC behavior for OVP event (Same signals as Fig 28b) Regardless of the source of the over voltage protection fault, when this is detected the NCP1351 enters a latched state. To exit this fault, the primary AC 38 power has to be removed resulting in a “mains reset”. This provides a very robust safety mechanism. High Voltage Backlight Inverter The high voltage inverter can be implemented using a half or full bridge topology. The decision on the topology is based on several considerations. With a half bridge topology, if it is operating in a fixed frequency - highly desirable in LCD-TV applications to avoid interference between the backlight and video signal - hard switching of the MOSFET devices is inevitable which causes excessive loss in the MOSFETs and generates severe EMI that must be dealt with to comply with regulatory requirements. PFC output 1 2 4 5 11 10 9 8 6 7 PFC_GND Figure 30: Example of Half Bridge Inverter Power Stage In addition to the high switching losses of the power MOSFETs, 4 additional ultrafast diodes have to be incorporated to eliminate possible switching oscillation and avoid the risk of cross conduction due to the large stored magnetic energy and poor reverse recovery behavior of the MOSFET body diodes. To avoid these disadvantages a full bridge topology is employed for the backlight inverter power stage. This offers numerous advantages compared to the half bridge: • • • • • • • • Zero Voltage Switching with fixed operating frequency Reduced EMI and power losses Reduced MOSFET switching stress and heat dissipation Improved lamp current form factor (much closer to sinusoidal waveform) No need for additional power diodes across the bridge Half the current in the MOSFETs and transformer Easier to implement primary side Over Current Protection Similar cost thanks to the elimination of the fast recovery diodes and reduced heat sinking. Moreover because the controller is operating at a fixed frequency, it is possible to synchronize the switching frequency to the video frequency and avoid any possibility of the backlight subsystem interference interacting with the video image. 39 Microsemi LX6503 backlight controller The LX6503 is a high performance CCFL controller intended for LCD-TV and other multi-lamp LCD display systems. It is particularly optimized to be a cost effective solution for the High Voltage Inverter architecture. The controller provides a pair of push-pull PWM drive signals with sufficient capacity to drive a push-pull, half bridge or full bridge CCFL inverter with the addition of simple external circuit. An on-chip regulator supplies both the operating voltage for the output gate drive and bias to the internal control circuitry. This allows direct connection of the controller to the system supply - up to 27 V without an external regulator. In addition the controller offers a versatile synchronization capability that allows the user to synchronize both the frequency and phase of the lamp current to an external signal coming from the video processor (or other controller). The lamp current regulation circuit comprises a simple and robust control loop design with excellent regulation accuracy and dynamic response at transient conditions. Furthermore a soft-start feature provides more reliable lamp strike and allows effective control of the possible inverter start-up surge current and lamp current/voltage overshoot. Lamp dimming operation is also well architected to facilitate convenient and flexible digital or analog dimming control with synchronization capability. In addition, reliable fault detection and protection functions are facilitated including open lamp protection, over voltage, short circuit and over current protection. Programmable strike and protection timing and fault indication are also incorporated to provide robust operation. The device is housed in a wide body SOIC-16 surface mount package. +12V C307 F301 0.47 1/2W 47uF + Output Drive A C308 1uF C311 4.7uF vdd R332 75K R333 750K R334 750K IC300 LX6503-IDW C312 220pF C315 C318 Output Drive B 1 1uF 2 3 10nF 4 R343 10K R344 10K 6 A_DIM 7 R348 4K7 AOUT C_T GND BOUT BRT_D SS/FLT BRT_A COMP ENABLE 8 ENABLE VDD C_R C_B 5 PWM_DIM VIN ISNS SYNC VSNS 16 15 14 13 Current regulation information 12 R345 10K 11 10 Open Lamps Protection 9 R351 2K GND Current information C319 SYNC_IN D313 100nF C321 R355 R356 C322 R353 100pF 20K 10K 1nF 10K C323 R357 100K 2.2nF C324 R358 R359 C325 47pF 18K 22K 10nF 3 C326 R354 R360 C327 10nF 2K 33K 690pF D314 VSNS1 BAT54SWT1 D315 2 2 1 2 BAV70LT1 R361 220 R362 220 Over Voltage Protection 3 1 1 R363 R364 22K 22K 3 VSNS2 CN306 4324-2S 1 LAMP 2 1 2 RTN BAT54SWT1 Figure 31: LX6503 Schematic and Control Signals 40 A typical application circuit is illustrated in Figure 31. A built in regulator is connected to pin 1 (VIN) to step down the input voltage to the internal operating voltage VDD (pin 16). The VIN of the device can range from 6 to 27 V dc. In this application, the VIN is directly supply from the +12 V dc through fuse resistor F301 to protect the system in the event of a short circuit. C307 and C308 provide low impedance filtering. VDD supplies both output gate drivers and the internal control circuitry. The nominal operating voltage of VDD is 5.25 +/- 0.25V. Internal UVLO function is provided to protect the system from under voltage operation. An external low ESR capacitor C311 with lowest possible trace impedance to VDD and GND pin provides good noise decoupling for the internal circuitry. The main operating signals are described as following: y The operating frequency of the inverter is defined by the RC components connected to the C-R (pin 2). A saw tooth oscillating waveform with 2.5 V peak and 0.5 V valley is generated at this pin by the internal oscillator. y The lamp strike time and fault timing are programmable based on the components connected to C_T (pin 3). A 5 µA charging current source is connected to this pin internally from VDD. y Digital dimming can be controlled directly by a PWM signal applied on the BRT_D (pin 5). Alternatively, a DC control signal ranging from 0.5 - 2.5 V can also set the dimming duty from 0 to 100% with the frequency defined by the capacitor on C_B (pin 4). y In addition, brightness can also be controlled by an analog dimming input on BRT_A (pin 6). A DC voltage from 0.5 - 1.5 V sets the lamp current from zero to maximum. y ENABLE (pin 7) controls the on/off operation of the inverter. The voltage range from 2 - 4 V also sets the strike frequency of the inverter. y SYNC (pin 8) allows frequency synchronization with another backlight controller in the system or to the video scanning clock signal to eliminate possible frequency related interference. y VSNS (pin 9) is voltage sense input for voltage regulation and over voltage protection. y ISNS (pin 10) is current sense input for lamp current regulation and open lamp, over current detection. y COMP (pin 11) is the output of the error amplifier. The error amplifier is a voltage controlled current source (GM) type which can normally provide robust regulation control with simple compensation. 41 y SS/FLT (pin 12) serves the function of soft start, strike frequency ramp and low pass filter function for the synchronization control. During strike mode the ramp signal of this pin controls the soft start of the inverter and the strike frequency sweeping. When synchronization is operating in run mode, the capacitor at this pin provides a low pass filter function for the synchronization loop. y AOUT (pin 15) and BOUT (pin 13) are the gate driver outputs with source and sink current capability of 0.6 A. Fixed frequency zero voltage switching Full Bridge VIN QAH AOH AOL QBH BOH BOL A B QAL AOL QBL AOH BOL BOH T0 T1 T2T3 T4 T5 T6T7 T8 Figure 32: Operating Waveform of Full Bridge T1~T2 T0~T1 VIN VIN AOH BOH A AOH A B BOL BOH AOL B BOL AOL (a) (b) 42 T2~T3 A AOH AOL (e) T7~T8 T6~T7 VIN VIN VIN AOL BOL (d) T5~T6 AOH BOH A (f) AOL AOH BOH BOL BOH B A B A B BOL B BOL (c) AOH BOH A B AOL BOL AOH BOH A B AOL VIN VIN BOH AOH T4~T5 T3~T4 VIN AOL (g) BOL (h) Figure 33: Operating State Of Full Bridge Figure 32 shows a full bridge circuit and the gate drive waveform on the 4 MOSFETs derived from the LX6503 controller. One important feature should be noted is that the drive signals of high side and low side power switches of the same bridge arm, i.e. AOH, AOL or BOH, BOL, are complementary to each other by neglecting the dead time. With such a feature the stored magnetic energy in the transformer primary winding can be used to push the switching node to the opposite DC rail when a device is turned off, which essentially creates a zero voltage condition across the counterpart device to be turned on next. If the stored magnetic energy is large enough to sustain such condition till the end of the dead time when the counterpart device is turned on, a zero voltage switching operation will be successfully obtained. The detailed operation is described as follows: Starting from the period from T0 to T1 as indicated in Figure 32, drive signals BOH and AOL turns the diagonal devices QBH and QAL on and the transformer primary winding current flows in the direction as indicated in Figure 33a. At T1 QBH is turned off by BOH and the magnetic energy stored in the leakage inductance and transformer magnetization charges up the body capacitance of 43 QBH and discharges the body capacitance of QBL, and eventually pushes the switching node B below the ground level. Once this transition is complete the body diode of QBL becomes forward biased to clamp node B near ground level and the current start circulating between QAL and the body diode of QBL as indicated in Figure 33b. During this period the decay of the circulating current is minimal because the rate of decay is inversely proportional to the voltage across the transformer winding which is mainly the body diode forward drop. It should be noted that it is not granted that the potential of switching node B can always be pushed below ground level. If the stored magnetic energy is not large enough to fully charge/discharge the body capacitance of QBH and QBL, switching node B cannot be pushed below ground level and it will start oscillating and eventually settle at the mid point level of the DC input. It should also be noted that the time for the switching node B to swing to ground level is dependent on the value of the MOSFET body capacitance, the transformer leakage inductance, and the amplitude of the current at T1 instant. Higher current level and LC value will result in a shorter swing time. After the dead time T2-T1, QBL is turned on by BOL and the primary current continues to circulate through QAL and QBL if it is not yet extinguished, as shown in Figure 28c. Such condition remains through out the period between T2 and T3 during which the voltage across the transformer primary winding is nearly zero. At the moment of T3, QAL is turned off by AOL and the circulating current starts to charge the body capacitance of QAL and discharge the body capacitance of QAH. If the remaining energy is sufficient to complete the charge /discharge it will eventually push the switching node A above the positive DC rail VIN and force the body diode of QAH to conduct. Node A will then be clamped at near VIN level and the circulating current will continue to flow through the new path of QAH body diode, DC input source, and QBL. Here it should be particularly noted that during this period from T3 to T4 the decay of the circulation current is much faster because the voltage across the transformer primary winding has to rise to slightly higher than the DC input voltage in order to maintain the continuous inductive current flow. If the remaining magnetic energy is large enough to maintain the forward bias of QAH body diode and keep the continuous current circulation till AOH goes high, a successful soft switching is obtained to turn on QAH at zero voltage condition. If the remaining magnetic energy is not large enough, however, it may enter the situation that the circulation current extinguishes before full charge/discharge of the MOSFET body capacitance and the switching node A will not be able to swing up to VIN level, or after node A swings above VIN the circulation current extinguishes before AOH comes on and the potential of node A swings back down. Under either circumstance a zero voltage condition across QAH cannot be obtained to realize a soft switching operation. The above situation is more likely at light load under narrow PWM duty cycle, and low transformer leakage inductance conditions, which generally results in 44 less stored magnetic energy. Another important factor to successful soft switching is the dead time setting. If the dead time is too long, the inductive circulation current cannot hold its continuity before AOH comes on and hence decay to zero before QAH is turned on. As such the dead time should have an upper limit. On the other hand, when a power switch is turned off, like QBH at T1 and QAL at T3, it takes a certain time for the switching node potential to swing to the opposite DC rail. The swing time could have a wide range with different designs depending on the values of the transformer primary leakage inductance, the MOSFET body capacitance, and transformer primary current level etc. Theoretically the switching node potential swing is part of the resonance cycle at the switching transition. The frequency of the resonance is determined by the transformer primary leakage inductance, the MOSFET body capacitance and other minor parasitic parameters, and the theoretical free resonance peak voltage (Here the free resonance peak means the peak voltage value at the ¼ resonance cycle point if there is no clamping to the DC rail by the MOSFET body diode) which is determined by the L, C, R parameters of the resonance tank and the transformer primary current level. Higher resonance frequency and higher free resonance peak voltage will result in shorter time for the switching node to swing to the opposite DC rail and vise versa. From this point the dead time also needs to be long enough to allow full swing of the switching node potential under a wide range of operating conditions. If the dead time is too short it may enter the situation that the power MOS is turned on before its VDS is pushed to zero by the switching node swing and thus soft switching cannot be realized. Taking account of the above points, a reasonable dead time range for practical CCFL inverter applications lies in the range of about 130 to 400 ns. In actual application designs as indicated above under specific light load conditions, zero voltage switching might not occur. Under such circumstances, measures have to be taken in the design to ensure successful soft switching operation. One approach is to increase the transformer magnetizing current or the primary leakage inductance. This will increase the stored magnetic energy to maintain the continuity of the inductive current during dead time. Another approach is to increase or decrease the effective dead time of the power switches externally to get the desired switching control timing according to the particular inverter power circuit parameters. At T4, QAH is turned on by AOH. If the current flowing in the direction as shown in Figure 33d has not decayed to zero at this moment, it will keep flowing until it decays to zero and then reverse the direction as shown in Figure 33e. The following events evolve as shown in Figure 33f,g,h and so on continues the switching operation of the next commutation process that essentially repeats the same transitions as described above. A typical set of actual waveforms of AOL, BOL, AOH and BOH from the reference design is shown in figures 34-38. 45 Yellow-AOL; Blue-BOL; Purple-AOH; Green-BOH Figure 34: Gate Drive output waveforms Figure 35: Dead time between AOL (yellow) and AOH (purple): 280 ns 46 Figure 36: Dead time between AOL (yellow) and AOH (purple): 280 ns Figure 37: Dead time between BOL (blue) and BOH (green): 280 ns 47 Figure 38: Dead time between BOL (blue) and BOH (green): 280 ns Full Bridge Driver Circuit Description In a HV-LIPS configuration, the power MOSFETs for the full bridge are located on the primary side and the inverter controller is located on the secondary side across the isolation boundary. The output drive signals employ a push-pull signal format to drive two isolation transformers for the full bridge. The isolation transformer provides two isolation functions: the safety isolation between the primary and secondary, and isolation between the high side and low side MOSFET. Therefore the output signals from the drive transformer can be coupled to the power MOSFETs without the need of level shift function. The remaining function for soft switching full bridge drive is the dead time insertion. Figure 39 illustrates the drive circuit of one arm of the full bridge that incorporates the dead time function. 48 F3000.47R 1W PFC_OUT D301 BAV21 2 R303 2K21 3 4 D303 C328 1uF 450V 3 2 C300 1 470 nF M300 NTGD4167C R304 56 Q300 6 BAT54SWT1 1 T303 2 4 R310 5 R308 422 BCK-13-021T 10K 9 HV Transformer 10 6 7 STD3NK50ZT4 (DPAK) R318 1K5 Q302 C304 Q304 NTA4153N 1uF D306 BAV21 R322 R320 C316 10K 1nF 100K PFC_GND Output Drive B Output Drive A Figure 39: Full Bridge Zero Voltage Switching Driver Circuit Since winding 6-7 and 9-10 of T303 have the same phase, MOSFET Q302 is switched ON after the positive going edge from winding 6-7 with a delay time controlled by R318 and C316 together with the gate capacitance of Q302. In the meanwhile, the NMOS (bottom) of driver M300 is switched ON immediately by the positive going edge from winding 9-10 and thus turning OFF MOSFET Q300 quickly. During this time, C300 is also charged to replenish energy for the drive circuit of Q300. When the voltage of both windings drops to zero, the NMOS driver Q304 comes on to quickly turn off MOSFET Q302: this is done without delay as the discharge loop is a low impedance path. Simultaneously, the NMOS of driver M300 is switched OFF (without delay) while the PMOS of M300 is switched ON with a delay defined by R303 and the input capacitor of its gate. In such an operating manner the switching OFF of the Power MOSFETs Q300 and Q302 is fast and without any deliberate delay while the switching ON of Q300 and Q302 always has delay. The result is a controlled dead time which prevents shoot through and facilitate zero voltage switching operation of the power switches. With zero voltage switching of the full bridge operation, there is no reverse recovery process for the body diode. Therefore ultra fast Power MOSFETs or external fast recovery diodes are not required. Another advantage of full bridge is that the current of the power MOSFETs and transformer primary winding is half of the half bridge. In the reference design, STD3NK500ZT4 500 MOSFETS are used which are rated at 3 A with an RDSON of less than 3.3R at 49 2.3 A. In a half bridge design MOSFETs of RDSON of 1.65R would have to be used to obtain similar conduction loss. Moreover, due to the low switching losses in this implementation, surface mount DPAK packaging can be used without additional heat sinks. Full Bridge Zero Voltage Switching Waveforms For figures 40-43, the top waveform is the current in the primary of the transformer (1 A/div) and the bottom two waveforms are the voltage on bout sides of the HV Transformer (500 V/div). 1 ms/div Figure 40: 285 Hz Burst 20 µs/div Figure 41: Burst mode soft-start 50 4 µs/div Figure 42: Standard Inverter Drive Cycle (52 kHz) 20 µs/div Figure 43: Burst mode soft-stop 51 High Voltage (HV) Transformer The HV transformer provides two voltages in the opposite phase (+ and -) to supply the lamps. With such outputs the voltages to the lamps is interleaved in a way that the adjacent lamps are always connected to opposite voltages. Such wiring arrangement will result in the smallest and localized HV electric field and thus minimizes the interference to the LCD panel. In addition, such a configuration can also drive U-shape lamps which will further reduce the overall backlight system cost. In fact, dual phase voltage is the most common approach on the market, and this transformer design offers very competitive cost compared with two transformers or multi-transformer approach. The high voltage transformer is designed to work in the frequency range of about 40 kHz to 80 kHz with a primary inductance of around 1.8 mH. It is build on a UP34 core and is capable of providing up to 120 W output, which is more than the power requirement of most 32” applications (about 95 W). So it would also be able to drive a 37” without any problem and possibly up to 42” in future while the efficiency of the CCFL backlight systems continually improve and the power consumption reduce further. The turn ratio has been optimized to get the required voltage / power for the lamps with the target duty cycle. In actual applications, the inverter will operate at higher duty cycle with smaller turns ratio which normally results in better lamp current waveform and better inverter efficiency. But with the reduced headroom of the output voltage there would a chance that the maximum output voltage is not enough to ignite the lamps during strike operation. On the other hand, larger turns ration provides more strike headroom but the inverter efficiency and lamp current form factor will suffer. In this reference design a balancer network has been employed to balance the lamp current. The balancer network has an intrinsic mechanism to help lamp strike. In this sense it allows to use smaller turns ratio for the transformer to get better inverter efficiency and the lamp current waveform. Basic Transformer Construction • The turn ratio is 3.76 with 125 turns for the primary and 470 for each secondary with a primary inductance of 1.8 mH • For reduced losses, the primary wire is a 0.10 mm x 16 while the secondary wire is single 0.15 mm • To avoid isolation issues which could impact reliability, the secondary is split with a multi-slot bobbin construction with care to avoid crossing wires • The leakage inductance from the secondary is 19.2 mH for each secondary winding with the primary shorted The reference of the transformer is PIT 125050-3551 GP and is available from Taipei Multipower Products (TMP) in Taiwan. 52 C306 100 nF 1 2 T309 11 10 9 8 4 5 6 7 PIT125050-3551 GP C309 C310 5pF 5pF C329 C330 R366 R337 R338 120 120 150 3 120 1 R365 2 5pF R367 R368 R339 R340 120 120 150 120 D311 BAV70LT1 5pF VSNS2 C313 5.6nF VSNS1 C314 5.6nF R345 10K Figure 44: Schematic for both current and voltage sensing The current and voltage sensing from the transformer is illustrated in Fig. 39. The resistor banks of R355, R366, R337, R338 and R367, R368, R339, R340 at the secondary winding return terminals convert the transformer current to voltage signals. It essentially forms a full wave rectification circuit in combination with D311 to obtain the current sense information of both positive and negative cycles. The transformer output voltage is sensed by the two capacitor divider strings connected to the two HV output terminals. The voltage sense signal from VSNS1 and VSNS2 are fed to the VSNS pin of the controller after rectification. This information is used for voltage regulation as well as over voltage protection. CCFL Drive and Current Balancing The specific characteristics of CCFL lamps require special techniques to drive them. The two most important functions required for successful CCFL operation are the lamps strike and lamp current balancing because of the following: • The CCFL lamp requires a high voltage, normally about 1.5 to 2 times of its normal operating voltage to make the initial gas breakdown inside the lamp to start the normal operating cycle. This process is called strike (or kick off, ignition etc.). Further, because the lamp operating voltage is much lower than strike voltage, in multi-lamp parallel operation the voltage could be clamped by the first striked lamps and the remaining lamps may not be able to strike successfully. y Due to the very low dynamic impedance characteristics of CCFL, the lamps will enter a “run away” situation, i.e. the current is concentrated to one or a few lamps with lower operating voltage and the other lamps have no current, when the lamps are put in parallel directly. 53 For to above reasons, lamp strike and current balancing have to be considered carefully in order to get a reliable operation of the backlight system. The Jin Balancer solution employed in this reference design can provide excellent lamp current balancing function and in the meanwhile guarantees reliable lamp strike in combination with the frequency sweeping strike technique. The Jin Balancer technique is based on the electro-magnetic coupling mechanism of the balancing transformer network that generates additional correction voltage to the lamps to equalize the lamp current. The basic configuration of the balancer network is shown in Figure 45. The serial loop of the balancer secondary windings equalizes the primary side current and provides coupling mechanism between the lamp circuits. With such coupling mechanism if a lamp is not stricken, the energy from the stricken lamps will be automatically coupled to the balancer primary winding of the un-stricken lamp circuit to increase the voltage across the lamp and help it to strike. As can be seen from Figure 45 the wiring configuration of the balancer network is uniform regardless the number of lamps. In addition, one type of balancer transformer can fit with almost all the lamp sizes. These features make the Jin balancer solution very flexible in CCFL inverter applications. Apart from the balancing function, the signal from the secondary winding loop can also be used to detect open lamp condition. When a lamp is open, the voltages in the primary and secondary winding of the corresponding balancer rise sharply, because of the significant increase of the magnetic flux in the balancer core due to the disappearance of the primary current. With such an indicator, open lamp detection can be easily accomplished by monitoring the voltage signal from the balancer secondary. Because the primary and secondary winding of the balancer are electrically isolated, the detection function can be easily implemented with low voltage, low cost components in all types of lamp configuration regardless whether the balancers are placed at low voltage or high voltage side of the lamp, or whether the lamps are driven from single side or differentially. Another advantage of this solution is that the lamp current balancing is largely governed by the balancer turns ratio but not the absolute value of the winding inductance. Therefore the solution is insensitive to manufacturing tolerances such as differences in core assembly, or parameter changes during operation such as inductance change with temperature etc. 54 Figure 45: JIN balance Approach As illustrated in figure 45, each balancer transformer has 2 windings: • • a “primary” winding connected in series with the lamp and a “secondary” winding connected in series with all other secondary windings as a closed loop. The general requirements for the current balancing transformer are listed below. In this specific 32” HV-LIPS application a single PCB is used to house the whole power circuitry including power supply, inverter, and balancer network. As such the balancer transformers uses a through-hole configuration to fit the assembly process. If the design is to be scaled up to a larger panel size, the balancer board might be separated from the main power board. In that case the balancer transformers would be configured in an alternative surface mount packaging. • • • • • • • • Core EFD1215 Primary: 39 µH +- 30% Secondary (high voltage in series with the lamp): 625 mH +/-30% Turns ratio: 1/125 Isolation: winding to core > 1.5 kV, winding to winding > 2.5 kV Size: 20.9 x 13.3 x 7.8 mm Through hole The reference of the balancer transformer is PBT-07087-1322 GP from TMP Taiwan The below schematic illustrates how the balancer and sensing circuitry are configured to drive four lamps. The resistor divider network from the balancer secondary winding provides the monitor information for open lamp detection. The analog signals from the divider network are OR’ed by the diode D302 and 55 D305 and fed to the controller to monitor the lamp status during both the strike and run operations. T300 PBT-07087-1322G 1 7 High Voltage LAMP1 CN300 4 R300 4k7 D302 R306 3k3 R307 3k3 2 1 2 T301 PBT-07087-1322G 1 7 R302 4k7 1 3 6 LAMP2 4 6 SM02B-BHSS-1-TB T302 PBT-07087-1322G 1 7 BAV70LT1 LAMP3 Open Lamps information CN301 4 R312 4k7 D305 1 3 1 2 2 6 T305 PBT-07087-1322G 1 7 R313 4k7 R316 3k3 R317 3k3 1 2 1 2 LAMP4 4 6 SM02B-BHSS-1-TB BAV70LT1 High Voltage 180° phase Figure 46: Configuration of Balancer and Open Lamp Monitor A classic approach for a 32” backlight subsystem is described below. • • • • 12 single lamps All lamps are connected together to a common ground The current sense for the system in on the ground wire All lamps are driven “in phase” from a single output high voltage transformer The GreenPoint design has been developed to take advantage of the evolution of lamp configurations and improve the overall system performance and flexibility. • • • Provide 2 interleaved + and – phase output to minimize the field interference to the panel, since adjacent lamps are driven with opposite phase voltage and the high voltage field is largely localized. Provide 2 interleaved + and – phase output to allow for U shape lamp applications with a virtual ground on the other side of the screen Employ current sensing for overall lamp current regulation on the high voltage transformer side instead of the “ground” side of the lamp. Figure 47 illustrates a U shape lamp solution that cuts the number of current balancers in half. Moreover it is important to see that this approach could be use for 2 straight lamps connected together in an equivalent U lamp like arrangement 56 (pseudo U-Shape). This only requires minor panel configuration changes to change the lamp connection on the other side of the panel. T307 PBT-07087-1322G 1 7 High Voltage U shape LAMP1 CN302 4 R301 4k7 D303 1 3 2 1 2 1 2 R303 4k7 SM02B-BHSS-1-TB R308 3k3 R309 3k3 BAV70LT1 Open Lamps information 6 1 T303 PBT-07087-1322G 7 U shape LAMP2 CN303 4 6 1 2 1 2 High Voltage 180° phase SM02B-BHSS-1-TB Figure 47: HV-LIPS current balancing for U shape lamps 57 Overall Efficiency Performance The focus of the reference design was to provide excellent parametric performance coupled with a high efficiency architecture that operated all the power conversion stages in a low loss manner. Some typical performance data is described in the following table where the flyback and PFC stage were loaded at various test load conditions. The inverter efficiency has been estimated because precise output power measurement directly on the high voltage lamps is difficult and not accurate enough. The PFC efficiency is > 95% over full range of line input at typical load condition and the peak efficiency of the flyback converter under a typical load configuration of 37 W is 78%. This is quite good considering that there are some additional losses in both 5 V and 12 V output based on the cross regulation technique that was used to assure tight regulation accuracy for the 5V and 12 V rails. The efficiency of the inverter is optimized thanks to the full bridge zero voltage switching topology that minimizes the switching losses. A testimony of this is the fact that the full bridge MOSFETs uses surface mount DPAK device and does not require any additional heat sinking. FLYBACK Output V x I 12,25 x 0,3 4,97 x 1,8 12.20 x 2 4.94 x 2.5 11.94 x 4 4.95 x 2.5 PFC INVERTER Pout Pin η Pin Pout 12.6 17 74% 100.8 117.8 36.8 46.9 78% 100.8 147.7 60.1 78.2 77% 100.8 179 Complete board Pin η Total η * 230V => 120.7 98% 89% 110V => 123 96% 87% 230V => 150.8 98% 87% 110V => 154.3 96% 85% 230V => 182.6 98% 85% 110V => 188 95% 82% * Total η = (P out Flyback + 94% Pin inverter) / Pin PFC Inverter η is estimated to be 94% (Ouput power on lamps is very difficult to mesure). Summary This complete GreenPoint reference design supports the emerging High Voltage LIPS architecture which powers the inverter directly from the PFC stage thus eliminating a complete power stage. Moreover due to the high efficiency proprietary architecture of the NCP1351 flyback controller, the need and expense associated with a dedicated standby supply is eliminated thus further simplify the solution. The architecture illustrated in this reference design has a high degree of flexibility to support a variety of voltage/current configurations with minor changes to the schematic and components used. Finally thanks to the use of an advanced backlighting controller with a zero voltage switching full bridge topology, the inverter power can be easily scaled up to support a variety of LCDTV sizes up to 42”. Authors: Jean-Paul Louvel and Bernie Weir Special appreciation to Dr. Xiao Ping Jin at Microsemi for his contributing to this document and strong support during the development of this reference design. 58 Appendix The appendix consists of the following sections: y y y y y y Photographs of complete board Schematics of SMPS1 Bill of Material of SMPS1 Supporting Device Literature that is available Relevant Global Energy conservation standards Schematics of complete design supporting alternative power configurations 59 Bottom View of SMPS1 60 Top View of SMPS1 Schematics of SMPS1 The following four pages contain the schematics for the SMPS1 implementation (see Table 3) of the GreenPoint HV-LIPS design. 61 5 4 3 2 1 1N5406(DO-201) 2 D1 BD1 GBU806 L1 150uH RT1 D2 4 3 D RV1 7 8 L2 D TF2815 - 150uH R24 68 TVR10471KSY Q1 STP11NK50ZFPN R5 68 C6 Y 1nF IC1 NCP1606B C9 PFC_OUT 27K C3 0.47uF 450V X2 100nF 275V D3 MMSD4148 ZCD DRV 7 8 VCC Ctrl 2 Q2 C12 L5 CFS24 - 2mH 3 RV5 eclat RV4 eclat R25 470 6 CT GND FB 1 CS 4 390nF R11 + R6 1M3 1/4W C8 68uF 450V 1 + BC856ALT1(SOT23) C11 100nF C C7 10nF 630V 1 R8 68 5 R2 1M3 1/4W 3 C5 Y 1nF R4 NTC 2R5 MUR550APF(DO-201) 2 C1 0.47uF 450V 11 2 - Schematic of Greenpoint Reference Board (SMPS1 Configuration) 2 3 + 1 C10 68uF 450V R9 10K R10 1M3 1/4W 56K C R12 220 + C18 X2 1uF 275V C13 47uF C14 100nF R26 680 C19 220pF R13 24K9 R14 0.10 2 W C16 1nF ZD1 1N4733A 5.1V PFC_GND R15 150K R16 150K R17 150K PFC_VCC R20 150K R19 AC Line - For PWM start 150K 1 150K 1 R18 2 J2 A B 2 J1 A B F1 FUSE 4A 250V (Axial Lead) L FG FG N CN1 4333-W05ST A A ON Model Name Size Engineer Subject 5 4 Schematic for HV-LIPS Greenpoint Reference Board (SMPS1) 3 2 ON SEMICONDUCTOR TWN S.E.C. ON-MICRO-LIPS-32" B Dale Tittensor EMI/ PFC PCB Revision Date Reviewer Sheet 1 Pilot 3 2009.02.12 Jean-Paul Louvel 1 of 4 5 4 R100 1M 1/4W R101 1M 1/4W 3 R102 1M 1/4W 2 T100 ER28L AC Line - For PWM start C103 10nF 250V F100 0.47 1/2W VS4 D100 BAV21 1 PFC_OUT R104 33K 2W C100 10nF 250V ZD100 1N5929B 15V + C101 10uF/50V Schematic of Greenpoint Reference Board (SMPS1 Configuration) 1 3 11 P 1 VCC1 1 FB D104 MMSD4148 R116 100 Vcc R117 47 VS2 D105 BAV21 R118 10 12 6 1 + CT Timer 3 CS Latch 2 Q114 3 2 NTD3055-094T4G DPAK +12V + C114 100nF C115 10uF/50 V 7 R120 20K +12V C111 330uF/16V Vref C116 10uF/35 V + + R119 10K C110 1000uF/16V + C142 220uF/35 V 8 C113 100nF R121 2K7 10uH + C109 1000uF/16V 3 2 L101 1 2 6 1 3 2 4 IC100 NCP1351B R114 0 R113 7.5K 1/4W C106 1000uF/16V R112 3K3 PC100B SFH817A D J100 A + J103 A 2 PFC_GND VS3 D101 MUR160 R108 0.47R 2W D C112 470nF 1 D107 MBR20100CTG (TO220) 5 Q103 BC846BDW SOT363 STB C143 4.7nF ZD101 1N5929B 22V R124 D108 MMSD4148 R122 4K7 470 P 4 C117 270pF GND Drv 5 R127 2K2 R125 1K C119 100nF J104 C118 100pF 2 1 D111 MBR20100CTG (TO220) P +5V 9 10 R129 100k 3 R130 150k 7 8 R134 27 22pF D113 MMSD4148 R169 NI 10uH 2 2 C122 1000uF/16V + 2 + NTD14N03R DPAK +5V R131 10K C123 1000uF/16V 1 Q113 3 + C C126 330uF/16V Q106 STD3NK60ZT4 C127 Y 1nF 2 C140 L102 1 OPP CKT R170 1K VS1 C121 270pF 1 D110 MMSD4148 C +5VSB +5VSB* + C138 330uF/16V Q107 BC856ALT1(SOT23) R136 47k 3 1 R137 220 VS2 +5VSB* 1 P PC100A SFH817A PFC_VCC R138 1K R142 16K2 R144 6K19 2 R147 100 VCC1 C130 470nF R149 0 B R148 4K7 2 B Q108 BC846ALT1(SOT23) 1 3 4 Vref 3 3 R153 10K IC101 TL431ACLPRPG 1%(TO92) R172 4K7 1 R164 100K 2 PC101B SFH817A R154 100K R155 2K49 D124 PFC_GND 0R STB +5VSB* R158 2K2 R159 2K2 1 R157 1K STANDBY PC101A SFH817A R161 100K 6.3V D121 MMSD4148 VS1-OVP R163 4K7 2 A A +5VSB* ZD103 1N4733A 5V1 (DO-41) Q111 BC846ALT1(SOT23) R165 470 Q112 BC846ALT1(SOT23) Schematic for HV-LIPS Greenpoint Reference Board (SMPS1) R166 4K7 R167 470 R168 470 C137 10nF ON Model Name Size Engineer Subject 5 4 3 2 ON SEMICONDUCTOR TWN S.E.C. ON-MICRO-LIPS-32" B Dale Tittensor SMPS PCB Revision Date Reviewer Sheet 1 Pilot 3 2009.02.12 Jean-Paul Louvel 2 of 4 5 4 3 2 1 Schematic of Greenpoint Reference Board (SMPS1 Configuration) D D CN311 4324-11S 1 2 3 4 5 6 7 8 9 10 11 +30V +12V +12V +12V +5V +5V +5V C C CN309 4324-10S 10 9 8 7 6 5 4 3 2 1 +5VSB +5VSB STB PWM_DIM A_DIM ENABLE SYNC_IN SYNC_OUT B B A A ON Model Name Size Engineer Subject 5 4 Schematic for HV-LIPS Greenpoint Reference Board (SMPS1) 3 2 ON SEMICONDUCTOR TWN S.E.C. ON-MICRO-LIPS-32" B Dale Tittensor CONNECTORS PCB Revision Date Reviewer Sheet 1 Pilot 3 2009.02.12 Jean-Paul Louvel 4 of 4 10 9 8 7 6 5 4 3 2 1 F3000.47R 1W PFC_OUT H D301 T300 PBT-07087-1322G 1 7 D300 H CN300 Schematic of Greenpoint Reference Board (SMPS1 Configuration) BAV21 M300 NTGD4167C 2 R303 2K21 BAV21 3 R304 56 4 2 C300 1 470 nF Q300 2 C301 1 470 nF 2 STD3NK50ZT4 (DPAK) T304 2 10 6 R312 4k7 D305 7 STD3NK50ZT4 (DPAK) STD3NK50ZT4 (DPAK) 1K5 6 Q302 R316 3k3 R317 3k3 2 Q303 R319 1K5 T305 PBT-07087-1322G 1 7 R313 4k7 1 3 R318 SM02B-BHSS-1-TB CN301 4 4 7 LAMP1 LAMP2 6 9 10 6 4 1 2 T302 PBT-07087-1322G 1 7 10K 9 1 2 R311 5 R309 422 BCK-13-021T 10K 2 4 BAV70LT1 1 R310 5 R308 422 BCK-13-021T R306 3k3 R307 3k3 3 6 BAT54SWT1 1 T303 Q301 6 T301 PBT-07087-1322G 1 7 R302 4k7 1 3 STD3NK50ZT4 (DPAK) 6 BAT54SWT1 R300 4k7 D302 D304 3 G 4 R305 56 4 D303 C328 1uF 450V 2 R301 2K21 3 M301 NTGD4167C 4 BAV70LT1 1 1 2 1 2 LAMP3 LAMP4 G SM02B-BHSS-1-TB 6 T306 PBT-07087-1322G 7 C305 C304 Q304 NTA4153N 1uF F 1uF R320 C316 10K 1nF Q305 NTA4153N CN302 R321 C317 10K 1nF 4 6 R323 D306 BAV21 R322 D307 BAV21 100K 100K R324 4k7 D308 R326 3k3 R327 3k3 1 PFC_GND T307 PBT-07087-1322G 1 7 R325 4k7 3 2 4 1 2 1 2 LAMP5 LAMP6 F SM02B-BHSS-1-TB 6 T308 PBT-07087-1322G 1 7 BAV70LT1 CN303 4 +12V E C307 C306 100 nF F301 0.47 1/2W 47uF 1 2 T309 R328 4k7 D309 11 10 R329 4k7 R330 3k3 R331 3k3 1 3 + 9 8 C308 1uF 2 4 5 4 BAV70LT1 6 7 C311 4.7uF 1 vdd R333 750K 1uF 2 3 C318 10nF 4 VDD C_R AOUT C_T GND C_B R343 10K 5 5pF 5pF C329 C330 5pF 5pF BOUT BRT_D SS/FLT BRT_A COMP 15 R365 R366 R337 R338 14 120 120 150 120 R344 10K 6 A_DIM 7 ENABLE R348 4K7 8 ENABLE ISNS SYNC VSNS R367 R368 R339 R340 120 120 150 120 VSNS2 C313 5.6nF 12 R335 4k7 D310 VSNS1 1 R346 4k7 9 D312 C320 100pF D313 C 2 BAV70LT1 2 R357 R355 R356 C322 R353 20K 10K 1nF 10K C323 C324 R358 R359 C325 C326 R354 R360 C327 47pF 18K 22K 10nF 10nF 2K 33K 690pF 100K 2.2nF D314 VSNS1 B 2 1 1 3 R363 R364 22K 22K CN306 4324-2S 1 1 2 2 VSNS2 BAT54SWT1 R347 4k7 4 1 2 LAMP11 LAMP12 SM02B-BHSS-1-TB C 6 B ON ON SEMICONDUCTOR TWN S.E.C. Model Name Size Engineer Subject 8 1 2 LAMP RTN A 9 6 BAV70LT1 Note: 1. Input Voltage 400V. 2. Output 100W to 200W. 3. ENABLE active above 1.5V. 4. Analog dimming input (A_DIM) 1 to 4VDC, or equivalent PWM signal. 5. PWM dimming input (PWM_DIM) 1 to 4VDC, Controls duty cycle from 0 TO 100%, Above 4V goes into continuous operation. 6. T2 and T3 about EE15 size, 25:38+38. 7. T1 about 108:360 10 T313 PBT-07087-1322G 7 R362 220 3 BAT54SWT1 LAMP9 LAMP10 R361 220 D315 2 1 2 SM02B-BHSS-1-TB 6 T314 PBT-07087-1322G 1 7 R350 3k3 R352 3k3 1 3 1 3 100pF 1 2 CN305 4 R349 1K R351 2K C321 4 BAV70LT1 C314 5.6nF 6 D R341 3k3 R342 3k3 1 3 R345 10K 10 100nF E T311 PBT-07087-1322G 7 D311 BAV70LT1 C319 LAMP7 LAMP8 SM02B-BHSS-1-TB 11 SYNC_IN 1 2 6 T312 PBT-07087-1322G 1 7 R336 4k7 2 13 1 2 CN304 16 3 PWM_DIM VIN 1 1 C315 C310 4 IC300 LX6503-IDW C312 220pF D C309 R334 750K 2 R332 75K PIT125050-3551 GP 6 T310 PBT-07087-1322G 1 7 7 Schematic for HV-LIPS Greenpoint Reference Board (SMPS1) 6 5 4 3 2 ON-MICRO-LIPS-32" B Dale Tittensor INVERTER PCB Revision Date Reviewer Sheet Pilot 3 2009.02.12 Jean-Paul Louvel 3 of 4 1 A Bill of Materials of the HV-LIPS board (SMPS1 Version) Designator Package / Dimensions Component Type Value Rating BD01 Bridge Rectifier 8A-600V 8A-600V BD01A Screw BD01B Heat-sink C001,C003 CFS 470 nF 450V Radial 15mm MES474K450VDC C005,C006 Y Cap 1 nF 400V / 4KV Radial 10mm 5SE102MT402A97E Joey Electronics SUCCESS C007 Ceramic Cap 10 nF 630V Radial 5mm 10nF 1KV SUCCESS 450V Radial 7.5mm D18x20mm Horizontal insertion:H < 20mm C008,C010 Electrolytic 105°C Reference Supplier GBU806 Taiwan Semiconductor M3*8 70 mm 68 uF YUAN FENG Industrial Co,LTD. Nippon Chemi Con EKXG451ELL680MM25S HQX104K275I04SANYAY Shanghai Ultra Tech (UTX) EKMG500ELL470MF11D Nippon Chemi Con HQX105K275N04SANYAY Shanghai Ultra Tech (UTX) C009 X2 Cap 100 nF 275V Radial 15mm C011 Ceramic Chip Cap 100 nF 10V 805 C012 Ceramic Chip Cap 390 nF 10V 805 C013 Electrolytic 105°C 47 uF 25V Radial 5mm D8mm C014 Ceramic Chip Cap 100 nF 16V 805 C016 Ceramic Chip Cap 1 nF 10V 805 C018 CPMX-X2 1 uF 275V Radial 22.5mm C019 Ceramic Chip Cap 220 pF 10V 805 C100 Ceramic Cap 10 nF 250V Radial 5mm 10nF 250V C101 Electrolytic 105°C 10 uF 25V Radial 5mm EKY-500ELL100ME11D C103 Ceramic Cap 10 nF 250V Radial 5mm 10nF 250V C106,C109,C110 Electrolytic 105°C Low Z 1000 uF 16V Radial 5mm D8mm EKY-160ELL102MH20D Nippon Chemi Con C111 Electrolytic 105°C Low Z 330 uF 16V Radial 5mm D8mm EKY-160ELL331MHB5D Nippon Chemi Con C112 Ceramic Chip Cap 470 nF 10V 805 C113,C114 Ceramic Chip Cap 100 nF 16V 805 C115,C116 Electrolytic 105°C 10 uF 35V Radial 5mm D5 EKY-500ELL100ME11D Nippon Chemi Con C117 Ceramic Chip Cap 270 pF 10V 805 Nippon Chemi Con C118,C119 Ceramic Chip Cap 100 pF 10V 805 C121 Ceramic Chip Cap 270 pF 25V 805 C122,C123 Electrolytic 105°C Low Z 1000 uF 16V Radial 5mm D8mm EKY-160ELL102MH20D Nippon Chemi Con C126 Electrolytic 105°C Low Z 330 uF 16V Radial 5mm D8mm EKY-160ELL331MHB5D Nippon Chemi Con 66 C127 CCS-Y1 1 nF 400V / 4KV Radial 10mm 5SE102MT402A97E SUCCESS C130 Ceramic Chip Cap 470 nF 10V 805 C137 Ceramic Chip Cap 10 nF 10V 805 C138 Electrolytic 105°C Low Z 330 uF 16V Radial 5mm D8mm KY 16VB330 8*12 Nippon Chemi Con C140 Ceramic Chip Cap 22 pF 10V 805 C142 Electrolytic 105°C 220 uF 35V Radial 5mm D8mm C143 Ceramic Chip Cap 4.7 nF 25V 805 EKY-350ELL221MH15D Nippon Chemi Con C300,C301 Ceramic Chip Cap 470 nF 16V 805 C304,C305 Ceramic Chip Cap 1 uF 10V 805 C306 CFS 100 nF 450V C307 Electrolytic 105°C 47 uF 16V Radial 15mm MES104K450VDC Radial 5mm D5 EKMG500ELL470MF11D Joey Electronics Nippon Chemi Con C308 Ceramic Chip Cap 1 uF 16V 805 C309,C310 Ceramic Cap 5 pF 2 kV Radial 5mm C311 Ceramic Chip Cap 4u7 10V 805 8NPO5R0D302A76E SUCCESS C312 Ceramic Chip Cap 220 pF 10V 805 C313,C314 Ceramic Chip Cap 5n6 16V 805 C315 Ceramic Chip Cap 1 uF 10V 805 C316,C317 Ceramic Chip Cap 1 nF 16V 805 C318 Ceramic Chip Cap 10 nF 10V 805 C319 Ceramic Chip Cap 100 nF 10V 805 C320,C321 Ceramic Chip Cap 100 pF 10V 805 C322 Ceramic Chip Cap 1 nF 10V 805 C323 Ceramic Chip Cap 2n2 10V 805 C324 Ceramic Chip Cap 47 pF 10V 805 C325,C326 Ceramic Chip Cap 10 nF 10V 805 C327 Ceramic Chip Cap 680 pF 10V 805 C328 CFS 1 uF 450V Radial 15mm MES105K450VDC C329,C330 Ceramic Cap 5 pF 2 kV 8NPO5R0D302A76E Joey Electronics SUCCESS CN001 Connector 4333-W05ST 5A 250V Radial 5mm Radial 15mm with 2 ext. pins 4333-W05ST LEAMAX Enterprise CN300-CN305 HV Lamp Connector SM02B-BHSS-1TB 2pins Radial 12.5mm 01040023028 SUNDA CN306 Signal connector 4324-2S Straight 2pins Radial 2.5mm 4324-2S LEAMAX Enterprise 67 CN309 Signal connector 4324-10S CN311 Signal connector 4324-11S D001 Diode 1N5406 D002 Diode D003 D100 Straight 10pins Straight 11pins Radial 2.5mm 4324-10S LEAMAX Enterprise Radial 2.5mm 4324-11S LEAMAX Enterprise 3A-600V DO-201 TOP Manual Axial 22.5mm 10mm High Preformed 1N5406 ON Semiconductor MUR550APF 5A-520V DO-201 TOP Manual Axial 22.5mm 10mm High Preformed. MUR550APF ON Semiconductor Diode MMSD4148 0.2A-100V SOD-123 MMSD4148 ON Semiconductor Diode BAV21 0.2A 250V DO-35 Axial 12.5mm BAV21 PANJIT D101 Diode Ultra Fast MUR160 1A 600V DO-41 Axial 12.5mm MUR160 ON Semiconductor D104 Diode MMSD4148 0.2A 100V SOD-123 MMSD4148 ON Semiconductor D105 Diode BAV21 0.2A 250V DO-35 Axial 12.5mm BAV21 PANJIT D107 Diode, Dual Schottky MBR20100CTG 20A 100V TO-220AB MBR20100CTG ON Semiconductor D107A Screw M3*8 D107B Heat-sink 40mm D107C Insulator SLTO-220 JUNHO YUAN FENG Industrial Co,,LTD. D108,D110 Diode MMSD4148 0.2A 100V SOD-123 MMSD4148 ON Semiconductor D111 Diode, Dual Schottky MBR20100CTG 20A 100V TO-220AB MBR20100CTG ON Semiconductor D111A Screw M3*8 D111B Heat-sink 40mm D111C Insulator SLTO-220 JUNHO D113,D121 Diode MMSD4148 MMSD4148 ON Semiconductor D124 Carbon Chip Resistor 0R D300,D301 Diode BAV21 0.2A 250V DO-35 Axial 12.5mm BAV21 PANJIT D302 Dual Signal Diode BAV70LT1 0.2A 75V SOT-23 BAV70LT1 ON Semiconductor D122 0.2A 100V SOD-123 YUAN FENG Industrial Co,,LTD. 0R / Jumper 1206 D303,D304 Dual Schottky diode BAT54SWT1 0.2A 30V SOT323 BAT54SWT1 ON Semiconductor D305 Dual Signal Diode BAV70LT1 0.2A 75V SOT-23 BAV70LT1 ON Semiconductor D306,D307 Diode BAV21 0.2A 250V DO-35 Axial 12.5mm BAV21 PANJIT D308-D313 Dual Signal Diode BAV70LT1 0.2A 75V SOT-23 BAV70LT1 ON Semiconductor D314,D315 Dual Schottky diode BAT54SWT1 0.2A 30V SOT323 BAT54SWT1 ON Semiconductor 68 F001 Fuse 4A 250V Axial 5x20mm UBM-A004 F100 LV Fuse resistance 0.47R 1/2W 250V Radial 5mm D10 FKN 050 J R47 FK CONQUER Synton-Tech Corporation. F300 HV Fuse resistance 0.47R 1W 450V Radial 5mm D10 FRN 100S J R47 FK Synton-Tech Corporation. F301 LV Fuse resistance 0.47R 1/2W 250V Radial 5mm D10 FKN 050 J R47 FK Synton-Tech Corporation. IC001 PFC Controller NCP1606B SOIC-8 NCP1606B ON Semiconductor IC100 QFTon Controller NCP1351B SOIC-8 NCP1351B ON Semiconductor IC101 Voltage Ref. TL431ACLPRPG TO-92 TL431ACLPRPG ON Semiconductor IC300 Inverter Controller LX6503-IDW SOIC-16 LX6503-IDW Microsemi J001 Jumper Axial 12.5mm J002 Jumper Axial 12.5mm J100 Jumper Axial 12.5mm J103 Jumper Axial 12.5mm J104 Jumper L001 Diff. Mode Filter 130uH TOP Manual JLC2030 Shenzhen Jewel Electric. L002 PFC Coil TF2815 - 150uH TOP Manual JLC2832 Shenzhen Jewel Electric. L005 Common Mode Filter CFS24 - 2mH 2.5A TOP Manual JLB24103 Shenzhen Jewel Electric. L101,L102 Inductance filter 10uH 5A Radial 5mm JLC0895 M300.M301 Dual N+P MOS Driver NTGD4167C 2A 30V TSOP-6 NTGD4167C Shenzhen Jewel Electric. ON Semiconductor PC100,PC101 Opto-coupler SFH817A DIP-4 SFH817A SHARP Q001 Power MOS STP11NK50ZFP 11A 500V TO220FP STP11NK50ZFP STMicroelectronics Q001A Screw M3*8 Q001B Heat-sink 70mm Q002 PNP transistor BC856ALT1 SOT-23 BC856ALT1 ON Semiconductor Q103 Dual NPN BC846BDW SOT-363 BC846BDW ON Semiconductor Q106 Power MOS STD3NK60ZT4 DPAK STD3NK60ZT4 STMicroelectronics Q107 PNP BC856ALT1 SOT-23 BC856ALT1 ON Semiconductor Q108,Q111,Q112 NPN BC846ALT1 SOT-23 BC846ALT1 ON Semiconductor 1% Axial 12.5mm 4A 600V YUAN FENG Industrial Co,,LTD. Q113 NMOS NTD14N03R 14A 30V DPAK NTD14N03R ON Semiconductor Q114 NMOS NTD3055-094T4G 12A 60V DPAK NTD3055-094T4G ON Semiconductor Q300-Q303 Power MOS STD3NK50ZT4 3A 500V DPAK STD3NK50ZT4 STMicroelectronics NTA4153N-SC75 ON Semiconductor Q304,Q305 Signal NMOS NTA4153N-SC75 1A 20V SC75 R002 Carbon Film Resistor 1M3 1% 1/4W Axial 12.5mm 69 R004 Carbon Chip Resistor 27K 805 R005 Carbon Chip Resistor 68 R006 Carbon Film Resistor 1M3 1% R008 Carbon Chip Resistor 68 R009 Carbon Chip Resistor 10K R010 Carbon Film Resistor 1M3 1% R011 Carbon Chip Resistor 56K 805 R012 Carbon Chip Resistor 220 805 R013 Carbon Chip Resistor 24K9 1% R014 Wirewound Resistor 0.10 5% R015-R020 Carbon Film Resistor 150K 805 R024 Carbon Chip Resistor 68 805 R025 Carbon Chip Resistor 470 805 R026 Carbon Chip Resistor 680 805 R100,R101,R102 Carbon Film Resistor 1M 1/4W Axial 12.5mm R104 Metal Film Resistor 33K 5% 2W TOP Manual Axial 22.5mm 10mm High Preformed. R108 Wirewound Resistor 0.47R 5% 2W TOP Manual Axial 22.5mm R112 Carbon Chip Resistor 3K3 R113 Carbon Film Resistor 7K5 1/4W Axial 12.5mm R114 Carbon Chip Resistor 0R 805 R116 Carbon Chip Resistor 100 805 R117 Carbon Chip Resistor 47 805 R118 Carbon Chip Resistor 10 805 R119 Carbon Chip Resistor 10K 805 R120 Carbon Chip Resistor 20K 805 R121 Carbon Chip Resistor 2K7 805 R122 Carbon Chip Resistor 4K7 805 R124 Carbon Chip Resistor 470 805 R125 Carbon Chip Resistor 1K 805 R127 Carbon Film Resistor 2K2 R129 Carbon Chip Resistor 100K 805 1/4W Axial 12.5mm 805 805 1/4W Axial 12.5mm 805 2W TOP Manual Axial 22.5mm 805 1/4W Axial 12.5mm 805 70 R130 Carbon Chip Resistor 150K 805 R131 Carbon Chip Resistor 10K R134 Carbon Film Resistor 27 R136 Carbon Chip Resistor 47K 805 R137 Carbon Chip Resistor 220 805 R138 Carbon Chip Resistor 1K 805 R142 Carbon Chip Resistor 16K2 1% 805 R144 Carbon Chip Resistor 6K19 1% 805 R147 Carbon Chip Resistor 100 805 R148 Carbon Chip Resistor 4K7 805 R149 Carbon Chip Resistor 0R 805 R153 Carbon Chip Resistor 10K R154 Carbon Film Resistor 100K R155 Carbon Chip Resistor 2K49 1% 805 R157 Carbon Chip Resistor 1K 805 R158,R159 Carbon Chip Resistor 2K2 805 R161 Carbon Chip Resistor 100K 805 R163 Carbon Chip Resistor 4K7 805 R164 Carbon Chip Resistor 100K 805 R165 Carbon Chip Resistor 470 805 R166 Carbon Chip Resistor 4K7 805 R167,R168 Carbon Chip Resistor 470 805 R170 Carbon Chip Resistor 1K 805 R172,R300 Carbon Chip Resistor 4K7 805 R301 Carbon Chip Resistor 2k21 1% 805 R302 Carbon Chip Resistor 4K7 805 R303 Carbon Chip Resistor 2k21 1% 805 R304,R305 Carbon Chip Resistor 56 805 R306,R307 Carbon Chip Resistor 3K3 805 R308,R309 Carbon Chip Resistor 422 805 R310,R311 Carbon Chip Resistor 10K 805 R312,R313 Carbon Chip Resistor 4K7 805 805 1/4W Axial 12.5mm 805 1/4W Axial 12.5mm 71 R316,R317 Carbon Chip Resistor 3K3 805 R318,R319 Carbon Chip Resistor 1K5 805 R320,R321 Carbon Chip Resistor 10K 805 R322,R323 Carbon Chip Resistor 100K 805 R324,R325 Carbon Chip Resistor 4K7 805 R326,R327 Carbon Chip Resistor 3K3 805 R328,R329 Carbon Chip Resistor 4K7 805 R330,R331 Carbon Chip Resistor 3K3 805 R332 Carbon Chip Resistor 75K 805 R333,R334 Carbon Chip Resistor 750K 805 R335,R336 Carbon Chip Resistor 4K7 805 R337 Carbon Chip Resistor 120 805 R338,R339 Carbon Chip Resistor 150 805 R340 Carbon Chip Resistor 120 805 R341,R342 Carbon Chip Resistor 3K3 805 R343-R345 Carbon Chip Resistor 10K 805 R346-R348 Carbon Chip Resistor 4K7 805 R349 Carbon Chip Resistor 1K0 805 R350 Carbon Chip Resistor 3K3 805 R351 Carbon Chip Resistor 2K0 805 R352 Carbon Chip Resistor 3K3 805 R353 Carbon Chip Resistor 10K 805 R354 Carbon Chip Resistor 2K0 805 R355 Carbon Chip Resistor 20K 805 R356 Carbon Chip Resistor 10K 805 R357 Carbon Chip Resistor 100K 805 R358 Carbon Chip Resistor 18K 805 R359 Carbon Chip Resistor 22K 805 R360 Carbon Chip Resistor 33K R361,R362 Carbon Film Resistor 220 805 1/4W Axial 12.5mm R363,R364 Carbon Chip Resistor 22K 805 R365-R368 Carbon Chip Resistor 120 805 72 RT001 Thermistor 2R5 3W TOP Manual Rad 7.5mm RV001 Varistor TVR10471KSY TOP Manual Rad 7.5mm TVR10471KSY Thinking Electronic T100 Switch Mode Transformer Flyback EER28L TOP Manual BCK-28-1050 Shenzhen Jewel Electric. T300-T302,T305T308, T310-T314 Current Balance Transformer PBT-07087-1322G TOP Manual PBT-07087-1322G Taipei Multipower Products (TMP) T303,T304 Drive Transformer TOP Manual BCK-13-021TC T309 Inverter. HV Transformer TOP Manual PIT125050-3551 AG ZD001 Diode, Zener BCK-13-021TC PIT125050-3551 AG 1N4733A 5.1V 5% DO-41 Axial 12.5mm 1N4733A Shenzhen Jewel Electric. Taipei Multipower Products (TMP) ON Semiconductor ZD100 Diode, Zener 1N5929B 15V 5% DO-41 Axial 12.5mm 1N5929B ON Semiconductor ZD101 Diode, Zener 1N4746A 22V 5% DO-41 Axial 12.5mm 1N4746A ON Semiconductor ZD103 Diode, Zener 1N4733A 5.1V 5% DO-41 Axial 12.5mm 1N4733A ON Semiconductor Notes: Resistor tolerances are +/- 5% unless noted otherwise Capacitor tolerances are +/- 10% unless noted otherwise Electrolytic capacitor tolerances are +/- 20% unless noted otherwise 470V SCK 15 2R5 8 M S Y Thinking Electronic 73 NCP1351 • Datasheet • AND8288 NCP1351 Evaluation Board Documentation • Modeling the NCP1351 NCP1606/7 • NCP1606 Data Sheet • NCP1607 Data Sheet • AND8123 Power Factor Correction Operating in Critical Conduction Mode • AND8353 Implementing Cost Effective & Robust Power Factor Correction with NCP1607 • AND8154 Universal Adapter Power Supply with Active PFC • AND8016 Design of Power Factor Correction Circuits • PFC Handbook LX6503 • Data Sheet • Backlight Design for large LCD-TV Screens Article Magnetics Suppliers • TMP – HV Inverter Transformer and Balancers • Jewel – Flyback Transformer and PFC Inductor 74 References on Energy Standards CSC (China) • http://www.cecp.org.cn EU Eco-label (Europe) http://ec.europa.eu/environment/ecolabel/product/pg_television_en.htm EU Code of Conduct (Europe) • http://www.eup-network.de/product-groups/ Group for Energy Efficient Appliances (Europe) • http://www.efficient-appliances.org/Criteria.htm Top Runner (Japan) • http://www.eccj.or.jp/top_runner/index.html • http://www.eccj.or.jp/top_runner/e_0710.html Energy Saving Label (Korea) • http://www.kemco.or.kr/ Energy Star • http://www.energystar.gov/ • http://www.energystar.gov/index.cfm?fuseaction=find_a_product.showProductGroup&pgw_code=TV • http://www.energystar.gov/index.cfm?c=tv_vcr.pr_crit_tv_vcr Standby Considerations • http://standby.lbl.gov 75 Schematics of Complete PCB with all Configuration Options The following four pages contain the schematics for the complete PCB with all possible options (see Table 3) of the GreenPoint HV-LIPS design for details on the alternate configurations. 76 5 4 3 2 1 1N5406(DO-201) 2 D1 BD1 GBU806 L1 150uH RT1 D2 4 7 6 8 7 L2 L3 R3 100K RV1 C5 Y 1nF R22 100K X2 100nF 275V Q1 STP11NK50ZFPN R5 68 R7 100K IC1 NCP1606B C9 D TF2815 - 150uH PQ3252 - 150uH R24 68 TVR10471KSY C6 Y 1nF PFC_OUT 27K 5 ZCD D3 MMSD4148 Q2 7 R21 100K L5 L4 CFS24 - 2mH CFS28 - 5mH Ctrl 2 C12 3 RV5 eclat C VCC CT R23 100K RV4 eclat R25 470 6 GND FB 1 CS 4 C8 68uF 450V 390nF R11 + 1 R9 10K + R6 1M3 1/4W 1 BC856ALT1(SOT23) C11 100nF 8 C7 10nF 630V 1 R8 68 DRV R2 1M3 1/4W 2 R4 C10 68uF 450V 3 R1 100K C4 1uF 450V 2 3 C3 0.47uF 450V NTC 2R5 MUR550APF(DO-201) 3 - D C2 1uF 450V 11 9 2 C1 0.47uF 450V 2 3 + 1 Q3 STD5NK52ZD 56K R10 1M3 1/4W C R12 220 + X2 1uF 275V C18 C13 47uF C14 100nF C15 NA R26 680 C19 220pF R13 24K9 C17 NA R14 0.10 2 W C16 1nF ZD1 1N4733A 5.1V PFC_GND R15 150K R16 150K R17 150K PFC_VCC R18 150K R20 150K R19 AC Line - For PWM start 150K 1 B 1 B 2 RV2 eclat J2 NA 2 J1 NA L6 RV3 eclat CHOKE (EMI Choke) C20 X2 100nF 275V F1 FUSE 4A 250V (Axial Lead) A A L 5 FG FG N CN1 ON 4333-W05ST Model Name Size Engineer Subject 4 Schematic of Complete PCB with alternative configurations 3 2 ON SEMICONDUCTOR TWN S.E.C. ON-MICRO-LIPS-32" B Dale Tittensor EMI/ PFC PCB Revision Date Reviewer Sheet 1 PCB 3 2009.02.12 Jean-Paul Louvel 1 of 4 5 4 R100 1M 1/4W R101 1M 1/4W 3 R102 1M 1/4W 2 T100 ER28L AC Line - For PWM start C103 10nF 250V F102 0.47 1/2W VS4 D100 BAV21 1 PFC_OUT +30V R103 NA C100 10nF 250V ZD100 1N5929B 15V R109 100 1/2W IC100 NCP1351B D105 BAV21 CT Timer CS Latch 1 VS2 L101 1 12 + Drv NTP18N06G(TO220) NTD3055-094T4G DPAK 3 +12V + C114 100nF C115 10uF/50 V 7 C116 10uF/35 V + ZD101 1N5929B 22V 5 Q103 BC846BDW SOT363 R124 470 J104 +5VSB 2 R129 100k R130 150k 7 8 OPP CKT R134 27 22pF D113 MMSD4148 R169 NI 10uH 2 + + C123 1000uF/16V 1 2 C124 1000uF/16V C +5V + R131 10K C126 330uF/16V R132 NA Vref C120 1nF 500V R128 100 1/2W STB R133 NA D112 MMSD4148 R135 NA C127 Y 1nF Q107 BC856ALT1(SOT23) IC102 LM7805C R136 47k 1 3 1 + +5VSB* +5V Q104 NTP18N06G(TO220) Q113 NTD14N03R DPAK 3 Q105 BC846BDW SOT363 Q106 STD3NK60ZT4 2 C140 2 C122 1000uF/16V 0.47 1/2W J102 NA 1 L102 1 3 + C138 330uF/16V NA F101 1 J105 VS1 C121 270pF 1 R127 2K2 D111 MBR20100CTG (TO220) 9 10 D110 MMSD4148 D108 MMSD4148 R122 4K7 2 P +12V STB C143 4.7nF J101 NA C C111 330uF/16V R126 NA R125 1K C119 100nF R120 20K Vref 3 D107 MBR20100CTG (TO220) 5 + R119 10K C110 1000uF/16V C118 100pF R170 1K 2 + C109 1000uF/16V 2 C117 270pF GND 2 1 4 Q102 Q114 10uH + C142 220uF/35 V 8 2 P R123 NA NA R113 7.5K 1/4W 2 3 C106 1000uF/16V 6 C113 100nF R121 2K7 D D102 MMSD4148 R110 R111 NA D106 MUR420 R118 10 +24V STB C144 4.7nF 2 C108 1nF 500V 1 2 Q101 BC846BDW SOT363 C125 100nF R137 220 VS2 P 2 OUT +5VSB C139 100nF +5VSB* C141 470nF 1 R171 1K IN GND Vcc R117 47 C104 220uF/50V 3 FB D104 MMSD4148 R116 100 6 + R107 NA 1 1 NTD14N03R DPAK 3 1 R114 0 3 1 R112 3K3 2 2 4 VCC1 Q100 2 R106 NA J100 NA + J103 NA R115 100 1/2W 10uH +14V or +24V Vref 11 P PC100B SFH817A L100 1 VS3 D103 MUR420 3 D C107 NA C105 1nF 500V D101 MUR160 R108 0.47R 2W PFC_GND + C101 10uF/50V 1 R104 33K 2W C112 470nF F100 0.47 1/2W 1 PC100A SFH817A B Q108 BC846ALT1(SOT23) 1 3 PFC_VCC 2 R147 100 VS3 R138 1K VCC1 C130 470nF R149 0 R140 NA R142 16K2 R143 NA R144 6K19 R141 NA B C132 2 R148 4K7 C133 C131 NA C134 NA NA NA 4 Vref 3 3 R145 NA R153 10K IC101 TL431ACLPRPG 1%(TO92) R172 4K7 D124 MMSD4148 1 2 PC101B SFH817A R154 100K STB R155 2K49 D122 MMSD4148 + R173 100K PFC_GND R164 100K D125 MMSD4148 C128 470uF/6.3V +5VSB* R158 2K2 1 R157 1K 6.3V R160 1K R159 2K2 R161 100K STANDBY PC101A SFH817A 2 A VS2 VS2-OVP ZD104 1N4733A 13V (DO-41) 27V R163 4K7 D121 MMSD4148 +5VSB* VS1-OVP ZD103 1N4733A 5V1 (DO-41) 13V D123 MMSD4148 A VS3 VS3-OVP ZD105 1N4733A 27V (DO-41) Q111 BC846ALT1(SOT23) R165 470 Q112 BC846ALT1(SOT23) Schematic of Complete PCB with alternative configurations R166 4K7 R167 470 R168 470 C137 10nF ON Model Name Size Engineer Subject 5 4 3 2 ON SEMICONDUCTOR TWN S.E.C. ON-MICRO-LIPS-32" B Dale Tittensor SMPS PCB Revision Date Reviewer Sheet 1 PCB 3 2009.02.12 Jean-Paul Louvel 2 of 4 5 4 3 2 1 CN310 4324-4S 4 4 3 3 2 2 1 1 +24V +24V D D CN311 4324-11S 1 2 3 4 5 6 7 8 9 10 11 +30V +12V +12V +12V +5V +5V +5V C C CN309 4324-10S 10 9 8 7 6 5 4 3 2 1 +5VSB +5VSB STB PWM_DIM A_DIM ENABLE SYNC_IN SYNC_OUT B B A A ON Model Name Size Engineer Subject 5 4 Schematic of Complete PCB with alternative configurations 3 2 ON SEMICONDUCTOR TWN S.E.C. ON-MICRO-LIPS-32" B Dale Tittensor CONNECTORS PCB Revision Date Reviewer Sheet 1 PCB 3 2009.02.12 Jean-Paul Louvel 4 of 4 10 9 8 7 6 5 4 3 2 1 F3000.47R 1W PFC_OUT H D301 T300 PBT-07087-1322G 1 7 D300 H CN300 3 C301 1 470 nF 6 T303 T315 T316 BCK-13-021T PRT-203030-1622 GP TF-1613-1 7 2 4 9 C302 5 10 1 6 NA 9 4 2 7 R314 3 2 STD3NK50ZT4 (DPAK) 1 R310 5 R308 422 T304 T317 T318 10K BCK-13-021T PRT-203030-1622 GP TF-1613-1 7 2 4 9 C303 5 10 1 6 NA 9 4 2 7 R315 1K5 4 R312 4k7 D305 R313 4k7 R316 3k3 R317 3k3 1 3 STD3NK50ZT4 (DPAK) NA R318 Q302 2 6 CN301 10K STD3NK50ZT4 (DPAK) NA SM02B-BHSS-1-TB J301 NA R311 5 R309 422 2 Q303 R319 1K5 LAMP1 LAMP2 T302 PBT-07087-1322G 1 7 BAV70LT1 6 BAT54SWT1 1 G Q301 T301 PBT-07087-1322G 1 7 J302 NA 4 1 2 1 2 3 STD3NK50ZT4 (DPAK) 470 nF 1 BAT54SWT1 R306 3k3 R307 3k3 1 2 6 T305 PBT-07087-1322G 1 7 J304 NA 4 BAV70LT1 1 1 2 2 Q300 C300 R302 4k7 1 1 2 R300 4k7 D302 D304 2 C328 1uF 450V R305 56 4 D303 C331 1uF 450V 2 3 R304 56 4 6 1 2 LAMP3 LAMP4 G SM02B-BHSS-1-TB J303 NA 1 BAV21 R301 2K21 3 4 1 2 R303 2K21 M301 NTGD4167C 2 BAV21 M300 NTGD4167C 6 T306 PBT-07087-1322G 7 C305 C304 Q304 NTA4153N 1uF F 1uF R320 C316 10K 1nF Q305 NTA4153N CN302 R321 C317 10K 1nF 4 6 1 2 R324 4k7 D308 R325 4k7 R326 3k3 R327 3k3 1 PFC_GND 3 2 T307 PBT-07087-1322G 1 7 J306 NA 4 1 2 LAMP5 LAMP6 F SM02B-BHSS-1-TB J305 NA 1 100K 100K 1 D307 BAV21 2 R322 2 R323 D306 BAV21 6 T308 PBT-07087-1322G 1 7 BAV70LT1 CN303 R330 3k3 R331 3k3 1 3 + 9 8 C308 1uF 2 4 5 J308 NA 4 BAV70LT1 6 7 C311 4.7uF 1 vdd C334 5pF 5pF 5pF 5pF C333 C329 C330 C335 5pF 5pF 5pF 5pF 4 C_T GND C_B 5 BOUT SS/FLT BRT_A COMP C317 R365 R366 R337 R338 14 NC 120 120 150 120 R344 10K 6 A_DIM 7 ENABLE R348 4K7 8 ENABLE ISNS SYNC VSNS C316 R367 R368 R339 R340 NC 120 120 150 120 VSNS2 C313 5.6nF 12 VSNS1 R346 4k7 9 D312 C320 100pF D313 C 2 BAV70LT1 2 R357 R356 C322 R353 20K 10K 1nF 10K C323 C324 R358 R359 C325 C326 R354 R360 C327 47pF 18K 22K 10nF 10nF 2K 33K 680pF 100K 2.2nF D314 VSNS1 B 2 1 1 3 R363 R364 22K 22K CN306 4324-2S 1 1 2 2 VSNS2 BAT54SWT1 LAMP11 LAMP12 C 6 B ON ON SEMICONDUCTOR TWN S.E.C. Model Name Size Engineer Subject 8 1 2 SM02B-BHSS-1-TB J311 NA LAMP RTN A 9 J312 NA 4 1 2 BAV70LT1 Note: 1. Input Voltage 400V. 2. Output 100W to 200W. 3. ENABLE active above 1.5V. 4. Analog dimming input (A_DIM) 1 to 4VDC, or equivalent PWM signal. 5. PWM dimming input (PWM_DIM) 1 to 4VDC, Controls duty cycle from 0 TO 100%, Above 4V goes into continuous operation. 6. T2 and T3 about EE15 size, 25:38+38. 7. T1 about 108:360 10 6 T314 PBT-07087-1322G 1 7 R362 220 3 BAT54SWT1 D 6 R361 220 D315 2 R347 4k7 R350 3k3 R352 3k3 1 3 1 3 LAMP9 LAMP10 CN305 4 R349 1K 100nF 1 2 SM02B-BHSS-1-TB J309 NA T313 PBT-07087-1322G 1 7 BAV70LT1 C314 5.6nF R345 10K 10 C319 R355 J310 NA 4 1 2 D311 BAV70LT1 R351 2K 100pF T312 PBT-07087-1322G 1 7 1 R341 3k3 R342 3k3 1 3 6 11 SYNC_IN C321 R336 4k7 2 13 3 BRT_D D310 16 15 R335 4k7 2 AOUT E T311 PBT-07087-1322G 7 2 10nF R343 10K PWM_DIM VDD C_R SM02B-BHSS-1-TB J307 NA 6 CN304 1 3 VIN 1 1uF 2 C318 C310 4 IC300 LX6503-IDW 1 C315 C309 R334 750K C312 220pF D C332 2 R333 750K 2 R332 75K PIT125050-3551 GP LAMP7 LAMP8 1 D309 11 10 2 T309 1 2 1 1 2 1 F301 0.47 1/2W 47uF R329 4k7 1 2 1 C307 R328 4k7 6 T310 PBT-07087-1322G 1 7 2 E C306 100 nF 2 4 +12V 7 Schematic of Complete PCB with alternative configurations 6 5 4 3 2 ON-MICRO-LIPS-32" B Dale Tittensor INVERTER PCB Revision Date Reviewer Sheet PCB 3 2009.02.12 Jean-Paul Louvel 3 of 4 1 A