isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3544 DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 5 ps TYP. ·High Gain Bandwidth Product fT= 2 GHz TYP. @ IE= 5mA, VCE= 10V ·Low Feedback Capacitance; Cre = 0.55 pF TYP. APPLICATIONS ·Designed for use as UHF oscillator and mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.25 W TJ Junction Temperature 125 ℃ -55~125 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3544 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA 0.5 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 0.1 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 50 Current-Gain—Bandwidth Product IE= -5mA ; VCE= 10V 1.3 Feedback Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz Base Time Constant VCE= 10V,IE = -5mA,f = 31.9 MHz VCE(sat) fT Cre rbb’ • CC PARAMETER hFE Classifications Marking M L K hFE 50-100 70-140 120-250 isc Website：www.iscsemi.cn 2 250 2.0 GHz 0.55 1.0 pF 5 15 ps INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC3544 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3544 S-PARAMETER VCE = 10 V, IC = 5 mA , ZO = 50Ω S21 S11 Freque. S12 S22 MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.423 -78.0 7.244 107.7 0.047 64.7 0.780 -21.6 400 0.244 -107.9 3.756 84.2 0.062 58.8 0.744 -24.2 600 0.196 -131.7 2.686 69.2 0.088 58.0 0.721 -31.5 800 0.187 -154.3 2.037 55.8 0.099 56.7 0.718 -40.0 1000 0.175 -171.7 1.784 44.9 0.124 58.2 0.726 -49.6 1200 0.171 166.5 1.428 36.1 0.149 58.0 0.756 -58.9 1400 0.174 147.7 1.308 26.2 0.179 57.2 0.774 -67.2 1600 0.204 129.8 1.105 15.6 0.203 56.7 0.742 -75.7 VCE = 10 V, IC = 10 mA , ZO = 50Ω S21 S11 Freque. S12 S22 MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.281 -100.6 8.206 98.9 0.060 74.9 0.712 -21.5 400 0.220 -128.0 4.067 79.0 0.650 65.6 0.712 -22.6 600 0.218 -151.2 2.892 65.6 0.088 62.0 0.708 -29.8 800 0.181 -172.8 2.175 53.4 0.101 62.2 0.694 -38.6 1000 0.182 169.5 1.882 43.0 0.131 61.6 0.711 -48.0 1200 0.190 150.8 1.503 34.6 0.154 61.9 0.732 -58.1 1400 0.202 133.4 1.370 24.4 0.187 62.3 0.761 -66.6 1600 0.241 120.0 1.150 14.7 0.208 62.1 0.735 -74.9 isc Website：www.iscsemi.cn 4