isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR93A DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 35 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 175 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR93A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN ICBO Collector Cutoff Current VCB= 5V; IE= 0 hFE DC Current Gain IC= 30mA ; VCE= 5V 40 Current-Gain—Bandwidth Product IC= 30mA ; VCE= 5V; f= 500MHz 4.5 COB Output Capacitance Cre fT TYP. MAX UNIT 0.05 μA 6 GHz IE= 0 ; VCB= 5V; f= 1MHz 0.7 pF Feedback Frequency IE= 0 ; VCB= 5V; f= 1MHz 0.6 pF NF Noise Figure IC= 5mA ; VCE= 8V; f= 1GHz 1.9 dB NF Noise Figure IC= 5mA ; VCE= 8V; f= 2GHz 3 dB isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification BFR93A isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn BFR93A 4 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification BFR93A isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn BFR93A 6 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification BFR93A