isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3127 DESCRIPTION ·Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3127 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 20 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 12 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 0.5 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 10 μA hFE DC Current Gain IC= 20mA ; VCE= 5V 30 Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V 3.5 COB Output Capacitance IE= 0 ; VCB= 5V;f= 1.0MHz 0.9 PG Power Gain IC= 20mA ; VCE= 5V;f= 900MHz 10.5 dB NF Noise Figure IC= 5mA ; VCE= 5V;f= 900MHz 2.2 dB fT isc Website：www.iscsemi.cn 2 200 4.5 GHz 1.5 pF INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC3127 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC3127 4 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC3127 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC3127 6