MMFTN138 MMFTN138 N-Channel Logic Level Enhancement Mode Field Effect Transistor N-Kanal Logikpegel Feldeffekt-Transistor - Anreicherungstyp N N Version 2015-06-19 Type Code 1 1.3±0.1 3 2.4 ±0.2 0.4 +0.1 -0.05 Power dissipation – Verlustleistung +0.1 1.1 -0.2 2.9 ±0.1 2 1.9±0.1 Dimensions - Maße [mm] 1=G 2=S 3=D 360 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMFTN138 Drain-Source-voltage – Drain-Source-Spannung VDSS 50 V Drain-Gate-voltage (RGS < 20 KΩ ) Drain-Gate-Spannung VDGR 50 V VGSS VGSS ± 20 V ± 40 V Power dissipation – Verlustleistung Ptot 360 mW Drain current continuos – Drainstrom (dc) ID 220 mA Peak Drain current – Drain-Spitzenstrom IDM 880 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS 150°C -55…+150°C Gate-Source-voltage Gate-Source-Spannung © Diotec Semiconductor AG dc tP < 50 µs http://www.diotec.com/ 1 MMFTN138 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung ID = 250 µA V(BR)DSS 50 V Drain-Source leakage current – Drain-Source-Leckstrom VDS = 50 V VDS = 30 V IDSS 500 nA 100 nA IGSS ± 100 nA Gate-Source leakage current – Gate-Source-Leckstrom VGS = ± 20 V Gate-Source threshold voltage – Gate-Source Schwellspannung VGS = VDS, ID = 1 mA VGS(th) 0.8 V 1.6 V Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 10 V, ID = 220 mA VGS = 4.5 V, ID = 220 mA RDS(on) Forward Transconductance – Übertragungssteilheit VDS = 10 V, ID = 220 mA gFS 3.5 Ω 6Ω 0.12 S Input Capacitance – Eingangskapazität VDS = 25 V, f = 1 MHz Ciss 60 pF Coss 25 pF Crss 10 pF Output Capacitance – Ausgangskapazität VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 25 V, f = 1 MHz Turn-On Delay Time – Einschaltverzögerung VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω td(on) 8 ns tr 12 ns td(off) 16 ns tf 22 ns Turn-On Rise Time – Anstiegszeit VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω Turn-Off Delay Time – Ausschaltverzögerung VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω Turn-Off Fall Time – Abfallzeit VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 350 K/W Marking - Stempelung MMFTN138 = JD Drain-Source Diode Maximum Ratings and Characteristics (Tj = 25°C) Grenz- und Kennwerte (Tj = 25°C) Min. Typ. Max. Maximum Continuos Source Current IS 220 mA Maximum Pulse Source Current ISM 880 mA VGD 1.4 V Drain-Source Diode Forward Voltage IS = 440 mA 2 http://www.diotec.com/ © Diotec Semiconductor AG