DIOTEC MMFTN138

MMFTN138
MMFTN138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
N-Kanal Logikpegel Feldeffekt-Transistor - Anreicherungstyp
N
N
Version 2011-01-24
Power dissipation – Verlustleistung
1.1
2.9 ±0.1
0.4
Plastic case
Kunststoffgehäuse
1
1.3±0.1
2.5 max
3
Type
Code
360 mW
2
1.9
Dimensions - Maße [mm]
1=G
2=S
3=D
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMFTN138
Drain-Source-voltage – Drain-Source-Spannung
VDSS
50 V
Drain-Gate-voltage (RGS < 20 KΩ )
Drain-Gate-Spannung
VDGR
50 V
VGSS
VGSS
± 20 V
± 40 V
Power dissipation – Verlustleistung
Ptot
360 mW
Drain current continuos – Drainstrom (dc)
ID
220 mA
Peak Drain current – Drain-Spitzenstrom
IDM
880 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
150°C
-55…+150°C
Gate-Source-voltage
Gate-Source-Spannung
© Diotec Semiconductor AG
dc
tP < 50 µs
http://www.diotec.com/
1
MMFTN138
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung
ID = 250 µA
V(BR)DSS
50 V
Drain-Source leakage current – Drain-Source-Leckstrom
VDS = 50 V
VDS = 30 V
IDSS
500 nA
100 nA
IGSS
± 100 nA
Gate-Source leakage current – Gate-Source-Leckstrom
VGS = ± 20 V
Gate-Source threshold voltage – Gate-Source Schwellspannung
VGS = VDS, ID = 1 mA
VGS(th)
0.8 V
1.6 V
Drain-Source on-state resistance – Drain-Source Einschaltwiderstand
VGS = 10 V, ID = 220 mA
VGS = 4.5 V, ID = 220 mA
RDS(on)
Forward Transconductance – Übertragungssteilheit
VDS = 10 V, ID = 220 mA
gFS
3.5 Ω
6Ω
0.12 S
Input Capacitance – Eingangskapazität
VDS = 25 V, f = 1 MHz
Ciss
60 pF
Coss
25 pF
Crss
10 pF
Output Capacitance – Ausgangskapazität
VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance – Rückwirkungskapazität
VDS = 25 V, f = 1 MHz
Turn-On Delay Time – Einschaltverzögerung
VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω
td(on)
8 ns
tr
12 ns
td(off)
16 ns
tf
22 ns
Turn-On Rise Time – Anstiegszeit
VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω
Turn-Off Delay Time – Ausschaltverzögerung
VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω
Turn-Off Fall Time – Abfallzeit
VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 350 K/W
Drain-Source Diode
Maximum Ratings and Characteristics (Tj = 25°C)
Grenz- und Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Maximum Continuos Source Current
IS
220 mA
Maximum Pulse Source Current
ISM
880 mA
VGD
1.4 V
Drain-Source Diode Forward Voltage
IS = 440 mA
2
http://www.diotec.com/
© Diotec Semiconductor AG