Si7501DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Foot Case Nch RT1 5.5748 5.5748 N/A 1.5135 Case Pch 1.5135 RT2 13.8102 13.8102 N/A 1.3841 1.3841 RT3 10.8883 10.8883 N/A 242.3000 m 242.3000 m RT4 50.8287 50.8287 N/A 3.1601 3.1601 Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Foot Case Nch Case Pch CT1 631.1120 u 631.1120 u N/A 8.2586 m 8.2586 m CT2 109.2818 m 109.2818 m N/A 342.2478 u 342.2478 u CT3 12.3623 m 12.3623 m N/A 381.1755 m 381.1755 m CT4 1.5044 1.5044 N/A 4.0445 m 4.0445 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 69242 Revision: 26-Jul-07 www.vishay.com 1 Si7501DN_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Foot Case Nch RF1 5.9160 5.9160 N/A 1.8857 Case Pch 1.8857 RF2 14.0773 14.0773 N/A 2.0984 2.0984 RF3 12.5242 12.5242 N/A 1.7408 1.7408 RF4 48.4825 48.4825 N/A 575.1000 m 575.1000 m Junction to Ambient Nch Ambient Pch Foot Case Nch Case Pch CF1 553.9215 u 553.9215 u N/A 314.6453 u 314.6453 u CF2 10.6933 m 10.6933 m N/A 2.5415 m 2.5415 m CF3 125.2665 m 125.2665 m N/A 1.3227 m 1.3227 m CF4 1.4092 1.4092 N/A 5.4056 m 5.4056 m Thermal Capacitance (Joules/°C) Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 69242 Revision: 26-Jul-07 Si7501DN_RC Vishay Siliconix Document Number: 69242 Revision: 26-Jul-07 www.vishay.com 3 Si7501DN_RC Vishay Siliconix www.vishay.com 4 Document Number: 69242 Revision: 26-Jul-07