Si4532ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch RT1 19.5392 25.3899 N/A 13.5271 12.1190 RT2 7.1560 8.3098 N/A 5.9620 2.8132 RT3 30.9052 37.8506 N/A 18.6111 15.7090 RT4 51.8296 32.7340 N/A 11.8230 14.2911 Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch CT1 7.2584 m 14.1554 m N/A 3.0188 m 2.9834 m CT2 332.3182 u 1.3923 m N/A 321.7206 u 171.2325 u CT3 52.8205 m 96.4726 m N/A 9.5061 m 15.8368 m CT4 1.4020 2.5086 N/A 102.0017 m 161.0789 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74697 Revision: 08-May-07 www.vishay.com 1 Si4532ADY_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Case Foot Nch RF1 7.4669 7.5414 N/A 9.9556 Foot Pch 5.9982 RF2 20.3767 32.2037 N/A 26.7385 18.3288 RF3 32.2020 35.9884 N/A 10.9191 11.0877 RF4 49.7231 28.7179 N/A 2.6699 9.5210 Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch CF1 252.3032 u 864.8301 u N/A 321.8448 u 439.5991 u CF2 5.1236 m 9.4280 m N/A 2.9098 m 3.4656 m CF3 39.2085 m 95.7015 m N/A 58.1570 m 28.0161 m CF4 1.4272 3.0037 N/A 460.3757 m 211.0121 m Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 74697 Revision: 08-May-07 Si4532ADY_RC Vishay Siliconix Document Number: 74697 Revision: 08-May-07 www.vishay.com 3 Si4532ADY_RC Vishay Siliconix www.vishay.com 4 Document Number: 74697 Revision: 08-May-07