SUD50NP04-62_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Foot Case Nch RT1 4.9688 3.5658 N/A 2.4284 Case Pch 2.0566 RT2 15.3066 15.6366 N/A 3.1136 1.3376 RT3 6.0388 6.0849 N/A 1.5031 1.2648 RT4 26.6858 24.7127 N/A 954.9000 m 641.0000 m Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Foot Case Nch Case Pch CT1 477.6660 u 856.2567 u N/A 3.3533 m 32.2810 m 526.8787 u CT2 1.1178 1.1426 N/A 255.1478 u CT3 74.1354 m 103.5303 m N/A 57.2747 m 6.5959 m CT4 3.9928 4.2571 N/A 57.0590 m 575.3941 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 69604 Revision: 10-Sep-07 www.vishay.com 1 SUD50NP04-62_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Foot Case Nch Case Pch RF1 5.2104 3.9518 N/A 3.0440 1.5179 RF2 7.0752 7.2019 N/A 2.2956 1.5066 RF3 23.4423 22.5672 N/A 1.7619 2.0423 RF4 17.2721 16.2791 N/A 898.5000 m 233.2000 m Junction to Ambient Nch Ambient Pch Foot Case Nch Case Pch CF1 508.0078 u 927.7765 u N/A 229.1409 u 448.7527 u CF2 72.9500 m 105.3962 m N/A 1.3147 m 5.0665 m CF3 857.6415 m 822.8737 m N/A 15.9676 m 30.3608 m CF4 5.2195 5.3905 N/A 46.8118 m 2.1610 Thermal Capacitance (Joules/°C) Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 69604 Revision: 10-Sep-07 SUD50NP04-62_RC Vishay Siliconix Document Number: 69604 Revision: 10-Sep-07 www.vishay.com 3 SUD50NP04-62_RC Vishay Siliconix www.vishay.com 4 Document Number: 69604 Revision: 10-Sep-07