Si4565ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch RT1 30.1975 19.0317 N/A 11.4489 10.8612 RT2 8.3530 7.7577 N/A 3.8410 1.9400 RT3 18.4271 27.4635 N/A 10.5686 10.6540 RT4 62.9203 55.2920 N/A 6.2115 6.6268 Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch CT1 41.2307 m 12.5425 m N/A 6.7258 m 6.4312 m CT2 903.4913 u 2.8727 m N/A 672.1725 u 888.8493 u CT3 21.6919 m 51.0766 m N/A 62.6461 m 33.7175 m CT4 1.0988 1.1785 N/A 314.2587 m 412.9533 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74604 Revision: 09-May-07 www.vishay.com 1 Si4565ADY_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Case Foot Nch RF1 10.1617 8.5596 N/A 4.7348 Foot Pch 4.4306 RF2 32.6061 33.1975 N/A 13.7295 16.4030 RF3 17.4742 17.8116 N/A 9.4271 5.2435 RF4 59.5756 50.2002 N/A 4.0459 3.7900 Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch CF1 966.0238 u 1.4090 m N/A 636.8346 u 1.5704 m CF2 13.2845 m 8.7029 m N/A 5.4097 m 5.6339 m CF3 53.3988 m 130.1823 m N/A 64.5661 m 161.0177 m CF4 1.1056 1.1716 N/A 7.9990 m 12.5709 m Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 74604 Revision: 09-May-07 Si4565ADY_RC Vishay Siliconix Document Number: 74604 Revision: 09-May-07 www.vishay.com 3 Si4565ADY_RC Vishay Siliconix www.vishay.com 4 Document Number: 74604 Revision: 09-May-07