Si1067X Datasheet

Si1067X
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
ID (A)
0.150 at VGS = - 4.5 V
1.06
0.166 at VGS = - 2.5V
1.0
0.214 at VGS = - 1.8V
0.49
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
6.0
APPLICATIONS
• Load Switch for Portable Devices
SC-89 (6-LEADS)
S
D
1
6
D
2
5
D
G
3
4
S
X
XX
YY
D
Marking Code
Lot Traceability
and Date Code
G
Part # Code
D
Top View
P-Channel MOSFET
Ordering Information: Si1067X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipationa
TA = 25 °C
TA = 25 °C
TA = 70 °C
V
- 1.06b, c
ID
- 0.85b, c
IDM
-8
IS
- 0.2b, c
A
0.236b, c
PD
W
0.151b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Symbol
t 5 s
Steady State
RthJA
Typical
Maximum
440
530
540
650
Unit
°C/W
Notes:
a. Maximum under steady state conditions is 650 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Document Number: 74322
S10-2542-Rev. D, 08-Nov-10
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Si1067X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
V
- 32.07
ID = - 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.95
V
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
- 10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS =  5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1.06 A
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductance
gfs
3.02
- 0.45
-8
µA
A
0.125
0.150
VGS = - 2.5 V, ID = - 1.0 A
0.138
0.166
VGS = - 1.8 V, ID = - 0.49 A
0.165
0.214
VDS = - 10 V, ID = - 1.06 A
4.0

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
375
VDS = - 10 V, VGS = 0 V, f = 1 MHz
tr
pF
VDS = - 10 V, VGS = - 5 V, ID = - 1.06 A
6.5
9.3
6.0
9.1
VDS = - 10 V, VGS = - 4.5 V, ID = - 1.06 A
0.76
nC
2.23
f = 1 MHz
td(on)
td(off)
82
62
VDD = - 10 V, RL = 19.74 
ID  - 0.76 A, VGEN = - 4.5 V, Rg = 1 
tf
8.8
13.2
14
21
22
33
48
72
17
25.5

ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
8
IS = - 0.63 A
IF = - 0.7 A, dI/dt = 100 A/µs
A
0.8
1.2
V
12.8
19.2
nC
4.5
6.8
7.3
ns
5.5
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74322
S10-2542-Rev. D, 08-Nov-10
Si1067X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
8
VGS = 5 V thru 2.5 V
I D - Drain Current (A)
I D - Drain Current (A)
1.5
VGS = 2 V
6
4
VGS = 1.5 V
TC = 25 °C
1.0
TC = 125 °C
0.5
2
TC = - 55 °C
VGS = 1.0 V
0
0.0
1.0
2.0
3.0
0.0
0.0
4.0
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics Curves vs. Temperature
800
0.3
0.24
600
VGS = 1.8 V
0.18
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.4
VGS = 2.5 V
0.12
VGS = 4.5 V
Ciss
400
200
0.06
Coss
Crss
0
0
0
2
4
6
0
8
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.4
5
VGS = 4.5 V, ID = 1.06 A
ID = 1.06 A
VGS = 2.5 V, ID = 1.0 A
4
VDS = 10 V
3
2
VDS = 16 V
1.2
(Normalized)
R DS(on) - On-Resistance
VG S - Gate-to-Source Voltage (V)
12
1.0
VGS = 1.8 V, ID = 0.89 A
0.8
1
0
0
2
4
6
8
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74322
S10-2542-Rev. D, 08-Nov-10
150
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Si1067X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.28
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
I D = 1.06 A
1
TJ = 150 °C
TJ = 25 °C
0.1
0.01
0
0.21
TA = 125 °C
0.14
TA = 25 °C
0.07
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
- 21
0.8
0.7
- 22
ID = 250 µA
BVDSS (V)
VGS(th) (V)
0.6
ID = 250 µA
0.5
- 23
- 24
0.4
- 25
0.3
0.2
- 50
- 25
0
25
50
75
100
125
- 26
- 50
150
- 25
0
25
50
75
100
TJ - Temperature (°C)
Temperature (°C)
Threshold Voltage
BVDSS vs. Temperature
125
150
10
Limited by R DS(on)*
I D - Drain Current (A)
1 ms
1
10 ms
100 ms
0.1
1s
10 s
DC
0.01
TA = 25 °C
Single Pulse
BVDSS Limited
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74322
S10-2542-Rev. D, 08-Nov-10
Si1067X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
0.01
PDM
t1
t2
1. Duty Cycle, D =
0.001
t1
t2
2. Per Unit Base = RthJA = 540 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74322.
Document Number: 74322
S10-2542-Rev. D, 08-Nov-10
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Revision: 02-Oct-12
1
Document Number: 91000