Si1072X Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) Qg (Typ.) 0.093 at VGS = 10 V 1.3a 1.2 5.41 0.129 at VGS = 4.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D D 5 2 V D XX YY Marking Code Lot Traceability and Date Code G 3 4 S Part # Code Top View Ordering Information: Si1072X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipationa L = 0.1 mH TA = 25 °C TA = 25 °C TA = 70 °C 1.03b, c A 6 IAS 8 EAS 3.2 mJ b, c IS A 0.2 0.236b, c PD W 0.151b, c TJ, Tstg Operating Junction and Storage Temperature Range V 1.3b, c ID IDM Pulsed Drain Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Symbol t 5 s Steady State RthJA Typical Maximum 440 530 540 650 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. Document Number: 73892 S10-2542-Rev. E, 08-Nov-10 www.vishay.com 1 Si1072X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V 30.4 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 85 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs VDS = 5 V, VGS = 10 V - 1.86 1 6 µA A VGS = 10 V, ID = 1.3 A 0.077 0.093 VGS = 4.5 V, ID = 1.2 A 0.107 0.129 VDS = 15 V, ID = 1.3 A 15 mS b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time 280 VDS = 15 V, VGS = 0 V, f = 1 MHz 55 VDS = 15 V, VGS = 10 V, ID = 1.3 A 5.5 8.3 2.7 4.1 35 VDS = 15 V, VGS = 4.5 V, ID = 1.3 A td(off) 1.1 nC 0.8 f = 1 MHz td(on) tr pF VDD = 15 V, RL = 13.6 ID 1.1 A, VGEN = 10 V, Rg = 1 3.5 4.6 7 11 12 18 12 18 tf 6 9 td(on) 13 20 31 47 9 14 6 9 6 A 0.8 1.2 V 11.2 17 nC 4.5 6.8 tr td(off) VDD = 15 V, RL = 15.5 ID 0.97 A, VGEN = 10 V, Rg = 1 tf ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IS = 0.7 A IF = 1.2 A, dI/dt = 100 A/µs 7.5 ns 3.7 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73892 S10-2542-Rev. E, 08-Nov-10 Si1072X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 6 3.0 VGS = 10 V thru 5 V 5 2.4 I D - Drain Current (A) I D - Drain Current (A) VGS = 4 V 4 3 2 1.8 1.2 TC = 125 °C 0.6 1 VGS = 2 V 25 °C VGS = 3 V - 55 °C 0 0.0 0.0 1 0.5 2.0 1.5 2.5 0 1 VDS - Drain-to-Source Voltage (V) 0.15 300 C - Capacitance (pF) R DS(on) - On-Resistance ( ) 400 VGS = 4.5 V VGS = 10 V 0.10 100 0.00 0 3 4 5 6 7 Ciss 8 Coss Crss 0 6 ID - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 10 ID = 1.3 A VDS = 15 V 1.4 6 VDS = 24 V 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 200 0.05 2 4 Transfer Characteristics Curves vs. Temp. 0.20 1 3 VGS - Gate-to-Source Voltage (V) Output Characteristics 0 2 VGS = 10 V ID = 1.3 A 1.2 VGS = 4.5 V ID = 1.2 A 1.0 0.8 2 0 0 1 2 3 4 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73892 S10-2542-Rev. E, 08-Nov-10 5 6 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1072X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 0.20 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 1.3 A 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 0.001 0 0.2 0.4 0.6 0.8 0.16 TA = 125 °C 0.12 TA = 25 °C 0.08 0.04 0.00 1 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs. Temperature 5.0 2.6 ID = 250 µA 2.4 4.0 Power (W) V GS(th) (V) 2.2 2.0 3.0 2.0 1.8 1.0 1.6 1.4 - 50 - 25 0 25 50 75 100 125 150 0.0 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 10 100 µs I D - Drain Current (A) Limited by R DS(on)* 1 ms 1 10 ms 100 ms 0.1 1s 10 s 0.01 DC BVDSS Limited TA = 25 °C Single Pulse 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73892 S10-2542-Rev. E, 08-Nov-10 Si1072X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Notes: 0.01 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 ° C/W 0.001 3. TJM - TA = PDMZthJA(t) Single Pulse 0.0001 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73892. Document Number: 73892 S10-2542-Rev. E, 08-Nov-10 www.vishay.com 5 Package Information Vishay Siliconix SC89: 6Ć LEADS (SOTĆ563F) 2 3 E1/2 D 4 ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ A 6 2 aaa e1 5 C 2X 4 E/2 E E1 3 2X aaa ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ B D 4 C ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ 1 5 e 2 B 4 L1 L A 2X 3 bbb C 6X b ccc ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎ M C A–B D A1 A1 SEE DETAIL “A” MILLIMETERS Dim Min Max NOTES: 2. 2 3. 3 Dimensions in millimeters. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. Note Symbol Tolerances Of Form And Position A 0.56 0.60 aaa 0.10 A1 0.00 0.10 bbb 0.10 b 0.15 0.30 ccc 0.10 c 0.10 0.18 D 1.50 1.70 E 1.55 1.70 Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. E1 1.20 BSC e 0.50 BSC 44. Datums A, B and D to be determined 0.10 mm from the lead tip. e1 1.00 BSC Terminal numbers are shown for reference only. L 0.35 BSC 5. 5 L1 0.20 BSC 6. 6 These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Document Number: 71612 25-Jun-01 6 DETAIL “A” ÎÎÎÎÎÎ ÎÎÎÎÎÎ 1. SECTION B-B C 2, 3 2, 3 ECN: E-00499—Rev. B, 02-Jul-01 DWG: 5880 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1