Si1071X Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 0.167 at VGS = - 10 V 0.96 - 30 0.188 at VGS = - 4.5 V 0.90 0.244 at VGS = - 2.5 V 0.79 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 3.25 APPLICATIONS • Load Switch for Portable Devices SC-89 (6-LEADS) 1 6 D D 2 5 D G 3 4 S S Marking Code Z XX YY D Lot Traceability and Date Code G Part # Code Top View D P-Channel MOSFET Ordering Information: Si1071X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa TA = 25 °C TA = 25 °C TA = 70 °C V - 0.96b, c ID - 0.76b, c IDM -8 IS - 0.2b, c A 0.236b, c PD W 0.151b, c TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Symbol t 5 s Steady State RthJA Typical Maximum 440 530 540 650 Unit °C/W Notes: a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. Document Number: 74321 S10-2542-Rev. C, 08-Nov-10 www.vishay.com 1 Si1071X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V - 32.07 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 nA VDS = - 30 V, VGS = 0 V, TJ = 85 °C - 10 µA Gate-Source Leakage IDSS Zero Gate Voltage Drain Current a ID(on) On-State Drain Current VDS = 5 V, VGS = - 10 V VGS = - 10 V, ID = - 0.96 A Drain-Source On-State Resistancea RDS(on) Forward Transconductance gfs 3.02 - 0.7 - 1.45 -8 V A 0.139 0.167 VGS = - 4.5 V, ID = - 0.9 A 0.147 0.177 VGS = - 2.5 V, ID = - 0.79 A 0.195 0.244 VDS = - 15 V, ID = - 0.96 A 4.25 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time 315 VDS = - 15 V, VGS = 0 V, f = 1 MHz pF 45 VDS = - 15 V, VGS = - 4.5 V, ID = - 0.96 A VDS = - 15 V, VGS = - 10 V, ID = - 0.96 A 4.43 6.64 8.87 13.3 0.83 nC 1.57 f = 1 MHz td(on) tr 60 VDD = - 15 V, RL = 19.74 ID - 0.76 A, VGEN = - 10 V, Rg = 1 9.8 14.7 3.8 5.7 12 18 18 27 tf 7 10.5 td(on) 13 20 25 38 36 54 14 21 8 A 0.8 1.2 V nC td(off) tr td(off) VDD = - 15 V, RL = 20.27 ID - 0.74 A, VGEN = - 4.5 V, Rg = 1 tf ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time Body Diode Reverse Recovery trr 12.7 19.05 Qrr 5.7 8.6 Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IS = - 0.63 A IF = - 0.7 A, dI/dt = 100 A/µs 8.9 ns 3.8 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74321 S10-2542-Rev. C, 08-Nov-10 Si1071X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 8 2.0 VGS = 10 V thru 4 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 6 VGS = 3 V 4 VGS = 2 V 2 TC = 25 °C 1.2 0.8 TC = 125 °C TC = - 55 °C 0.4 0 0.0 VGS = 1 V 0.6 1.2 1.8 2.4 0.0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Curves vs. Temp. 0.35 600 VGS = 2.5 V 500 0.25 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.30 0.20 VGS = 4.5 V 0.15 VGS = 10 V 0.10 400 Ciss 300 200 Coss 100 0.05 Crss 0.00 0 0 3 6 9 12 15 0 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.6 10 ID = 0.96 A VGS = 10 V, ID = 0.96 A VGS = 4.5 V, ID = 0.91 A 1.4 VDS = 15 V 6 VDS = 24 V 4 (Normalized) 8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 VGS = 2.5 V ID = 0.79 A 1.2 1.0 0.8 2 0 0 2 4 6 8 10 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74321 S10-2542-Rev. C, 08-Nov-10 150 www.vishay.com 3 Si1071X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 0.36 ID = 0.96 A RDS(on) - On-Resistance (Ω) I S - Source Current (A) 0.30 1 TJ = 25 °C TJ = 150 °C 0.1 0.24 TA = 125 °C 0.18 0.12 TA = 25 °C 0.06 0.01 0 0.2 0.4 0.6 0.8 1.0 0.00 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5 1.3 1.2 4 1.0 Power (W) VGS(th) (V) 1.1 ID = 250 µA 0.9 0.8 3 2 0.7 1 0.6 0.5 - 50 0 - 25 0 25 50 75 100 125 0.01 150 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power 10 10 ms I D - Drain Current (A) Limited by R DS(on)* 1 100 ms 1s 10 s 0.1 DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74321 S10-2542-Rev. C, 08-Nov-10 Si1071X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 0.1 0.05 0.01 Notes: 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 °C/W 0.001 3. TJM - TA = PDMZthJA(t) Single Pulse 0.0001 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74321. Document Number: 74321 S10-2542-Rev. 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