Si1050X Vishay Siliconix N-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 Qg (Typ.) 1.23 0.120 at VGS = 1.5 V 0.7 RoHS COMPLIANT 7.1 0.102 at VGS = 1.8 V • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D D 5 2 D Q XX YY Marking Code Lot Traceability and Date Code G 3 4 S Part # Code Top View Ordering Information: Si1050X-T1-E3 (Lead (Pb)-free) Si1050X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Symbol VDS VGS TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C ID IDM IS PD TJ, Tstg Operating Junction and Storage Temperature Range Limit 8 ±5 Unit V 1.34b, c 1.07b, c 6 A 0.2b, c 0.236b, c 0.151b, c - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Symbol t≤5s Steady State RthJA Typical 440 540 Maximum 530 650 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. Document Number: 73896 S-80641-Rev. B, 24-Mar-08 www.vishay.com 1 Si1050X Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 8 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C - 2.55 0.35 0.9 V ± 100 nA VDS = 8 V, VGS = 0 V 1 nA VDS = 8 V, VGS = 0 V, TJ = 85 °C 10 µA VDS = ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.34 A 6 A 0.071 0.086 VGS = 2.5 V, ID = 1.29 A 0.078 0.093 VGS = 1.8 V, ID = 1.23 A 0.085 0.102 VGS = 1.5 V, ID = 0.76 A 0.092 0.120 VDS = 4 V, ID = 1.34 A 4.12 Ω S 585 VDS = 4 V, VGS = 0 V, f = 1 MHz 190 pF 130 VDS = 4 V, VGS = 5 V, ID = 1.34 A VDS = 4 V, VGS = 4.5 V, ID = 1.34 A 7.7 11.6 7.1 10.7 1.14 nC 1.69 f = 1 MHz td(on) td(off) V 18.2 VDD = 4 V, RL = 3.6 Ω ID ≅ 1.1 A, VGEN = 4.5 V, Rg = 1 Ω tf 3.5 4.6 6.8 10.2 Ω 35 53 25 37.5 6 9 0.8 1.2 V 18.5 28 nC 3.7 5.7 ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 6 IS = 1.0 A IF = 1.0 A, di/dt = 100 A/µs 6.7 A ns 11.8 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73896 S-80641-Rev. B, 24-Mar-08 Si1050X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 6 3.0 VGS = 5 thru 2 V 2.5 VGS = 1.5 V 4 3 2 I D - Drain Current (A) I D - Drain Current (A) 5 2.0 TC = 125 °C 1.5 1.0 1 TC = 25 °C 0.5 VGS = 1.0 V 0 0.0 0.6 1.2 1.8 TC = - 55 °C 0.0 0.0 2.4 0.4 VDS - Drain-to-Source Voltage (V) 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics curves vs. Temp. 1000 0.15 800 0.12 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.8 VGS = 1.8 V VGS = 1.5 V VGS = 2.5 V 0.09 VGS = 4.5 V Ciss 600 400 Coss 0.06 200 Crss 0 0.03 0 1 2 3 4 5 0 6 1 ID - Drain Current (A) 2 3 4 5 6 7 8 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.6 4 VDS = 4 V 3 VGS = 6.4 V 2 1 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 1.34 A VGS = 4.5 V, ID = 1.34 A VGS = 1.5 V, ID = 0.76 A 1.2 1.0 VGS = 2.5 V, ID = 1.30 A VGS = 1.8 V, ID = 1.23 A 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Qg - Gate Charge Document Number: 73896 S-80641-Rev. B, 24-Mar-08 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1050X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.16 10 R DS(on) - On-Resistance (Ω) ID = 1.34 A I S - Source Current (A) 1 TJ = 25 °C TJ = 150 °C 0.1 0.01 0.001 0.0 0.12 TA = 125 °C 0.08 TA = 25 °C 0.04 0.00 0.2 0.6 0.4 0.8 0 1.0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs VGS vs Temperature 0.9 5.0 0.8 ID = 250 µA Power (W) VGS(th) Variance (V) 4.0 0.7 0.6 0.5 3.0 2.0 0.4 1.0 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 150 0.001 0.1 0.01 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 10 1 ms Limited by RDS(on)* 10 ms I D - Drain Current (A) 1 100 ms 1s 0.1 10 s DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73896 S-80641-Rev. B, 24-Mar-08 Si1050X Vishay Siliconix TYPICAL CHARACTERISTICS 1 TA = 25 °C, unless otherwise noted Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: 0.01 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 °C/W 0.001 3. TJM - TA = PDMZthJA (t) Single Pulse 4. Surface Mounted 0.0001 10-4 10-3 10-2 1 10-1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73896. Document Number: 73896 S-80641-Rev. B, 24-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1