Power Transistors 2SC5884 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV ■ Features Rating Unit Collector-base voltage (Emitter open) VCBO 1 500 V Collector-emitter voltage (E-B short) VCES 1 500 V Emitter-base voltage (Collector open) VEBO 5 V IB 2 A Collector current IC 4 A Peak collector current * ICP 6 A Collector power dissipation PC 30 W Base current Ta = 25°C 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Solder Dip Symbol 2.9±0.2 0.76±0.06 1.45±0.15 1.2±0.15 4.1±0.2 Parameter 2.0±0.2 13.7+0.5 -0.2 ■ Absolute Maximum Ratings TC = 25°C 4.6±0.2 φ3.2±0.1 15.0±0.3 8.0±0.2 1.0±0.1 • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area • Built-in dumper diode 3.0±0.2 Unit: mm 9.9±0.3 1.25±0.1 2.6±0.1 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7° 1 2 3 1: Base 2: Collector 3: Emitter TO-220H Package Marking Symbol: C5884 Internal Connection C B Note) *: Non-repetitive peak collector current E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Emitter-base voltage (Collector open) VEBO Forward voltage Collector-base cutoff current (Emitter open) VF ICBO Conditions Max Unit IF = 2 A −2 V VCB = 1 000 V, IE = 0 50 µA VCB = 1 500 V, IE = 0 1 mA 10 2.5 V IE = 500 mA, IC = 0 hFE VCE = 5 V, IC = 2 A Collector-emitter saturation voltage VCE(sat) IC = 2 A, IB = 0.5 A Base-emitter saturation voltage VBE(sat) IC = 2 A, IB = 0.5 A Forward current transfer ratio Min Typ 5 V 5 1.5 V Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz Storage time tstg IC = 2 A, Resistance loaded 5.0 µs Fall time tf IB1 = 0.5 A, IB2 = −1.0 A 0.5 µs 3 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2004 SJD00311AED 1 2SC5884 PC Ta Safe operation area 100 (1) 20 IC t = 100 µs DC t= 1 ms 1 10−1 10−2 10 0 25 50 7 6 5 A 4 3 75 100 125 150 10−3 1 10 100 1 000 Collector-emitter voltage VCE (V) SJD00311AED 0 C B 1 Ambient temperature Ta (°C) 2 8 2 (2) 0 fH = 15.45 kHz, TC < 90°C A.S.O for a single pulse load caused by EHT flash over during horizontal operation. One action of the device must not use in all areas. (area A, B and C) But it is able to use in two areas. (area A and B or area B and C) 9 t= 10 ms 10 ICP 30 10 Collector current IC (A) 40 Safe operation area (Horizontal operation) Non repetitive pulse, TC = 25°C (1) TC = Ta (2) Without heat sink Collector current IC (A) Collector power dissipation PC (W) 50 < 1 mA 0 500 1 000 1 500 2 000 Collector-emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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