PANASONIC 2SC5884

Power Transistors
2SC5884
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
■ Features
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
1 500
V
Collector-emitter voltage (E-B short)
VCES
1 500
V
Emitter-base voltage (Collector open)
VEBO
5
V
IB
2
A
Collector current
IC
4
A
Peak collector current *
ICP
6
A
Collector power dissipation
PC
30
W
Base current
Ta = 25°C
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Solder Dip
Symbol
2.9±0.2
0.76±0.06
1.45±0.15
1.2±0.15
4.1±0.2
Parameter
2.0±0.2
13.7+0.5
-0.2
■ Absolute Maximum Ratings TC = 25°C
4.6±0.2
φ3.2±0.1
15.0±0.3
8.0±0.2
1.0±0.1
• High breakdown voltage: VCBO ≥ 1 500 V
• Wide safe operation area
• Built-in dumper diode
3.0±0.2
Unit: mm
9.9±0.3
1.25±0.1
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1
2
3
1: Base
2: Collector
3: Emitter
TO-220H Package
Marking Symbol: C5884
Internal Connection
C
B
Note) *: Non-repetitive peak collector current
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Emitter-base voltage (Collector open)
VEBO
Forward voltage
Collector-base cutoff current (Emitter open)
VF
ICBO
Conditions
Max
Unit
IF = 2 A
−2
V
VCB = 1 000 V, IE = 0
50
µA
VCB = 1 500 V, IE = 0
1
mA
10

2.5
V
IE = 500 mA, IC = 0
hFE
VCE = 5 V, IC = 2 A
Collector-emitter saturation voltage
VCE(sat)
IC = 2 A, IB = 0.5 A
Base-emitter saturation voltage
VBE(sat)
IC = 2 A, IB = 0.5 A
Forward current transfer ratio
Min
Typ
5
V
5
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
Storage time
tstg
IC = 2 A, Resistance loaded
5.0
µs
Fall time
tf
IB1 = 0.5 A, IB2 = −1.0 A
0.5
µs
3
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJD00311AED
1
2SC5884
PC  Ta
Safe operation area
100
(1)
20
IC
t = 100 µs
DC
t=
1 ms
1
10−1
10−2
10
0
25
50
7
6
5
A
4
3
75
100
125
150
10−3
1
10
100
1 000
Collector-emitter voltage VCE (V)
SJD00311AED
0
C
B
1
Ambient temperature Ta (°C)
2
8
2
(2)
0
fH = 15.45 kHz, TC < 90°C
A.S.O for a single
pulse load caused by
EHT flash over during
horizontal operation.
One action of the device must
not use in all areas.
(area A, B and C)
But it is able to use in two areas.
(area A and B or area B and C)
9
t=
10 ms
10 ICP
30
10
Collector current IC (A)
40
Safe operation area (Horizontal operation)
Non repetitive pulse, TC = 25°C
(1) TC = Ta
(2) Without heat sink
Collector current IC (A)
Collector power dissipation PC (W)
50
< 1 mA
0
500
1 000
1 500
2 000
Collector-emitter voltage VCE (V)
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and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
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2003 SEP