Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit: mm 8.0+0.5 –0.1 ■ Features 3.2±0.2 Parameter Symbol Rating Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO 60 +25 −10 +25 60 −10 Emitter-base voltage (Collector open) Unit V V VEBO 5 V Collector current IC 1 A Peak collector current ICP 1.5 A PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector power TC = 25°C dissipation 3.05±0.1 3.8±0.3 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C 16.0±1.0 • High forward current transfer ratio hFE • Built-in 60 V Zener diode between base to collector 11.0±0.5 φ 3.16±0.1 0.75±0.1 0.5±0.1 4.6±0.2 1 2 0.5±0.1 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 5.0 Internal Connection C Note) *: With a 100 mm × 100 mm × 2 mm Al heat sick. B R1 R2 E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Max Unit Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 0 50 85 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 50 85 V Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 1 µA Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 Forward current transfer ratio * hFE VCE = 10 V, IC = 1.0 A VCE(sat) VBE(sat) Collector-emitter saturation voltage Base-emitter saturation voltage * * Conditions Min Typ 2 mA 40 000 IC = 1.0 A, IB = 1.0 mA 1.8 V IC = 1.0 A, IB = 1.0 mA 2.2 V 6 500 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Publication date: May 2003 SJD00239BED 1 2SD2018 PC Ta IC VCE VCE = 10 V TC = 25°C 2.0 4 3 (1) 2 90 µA 80 µA 1.6 60 µA 1.2 50 µA 40 µA 0.8 (2) 30 µA 0.4 1 0 0 0 40 80 120 160 0 2 VBE(sat) IC 10 TC = −25°C 100°C 25°C 0.1 0.01 0.1 1 Collector current IC (A) 8 10 12 100 10 TC = 100°C 1 −25°C 0.1 0.01 10 105 TC = 100°C 25°C −25°C 103 102 0.01 0.1 1 Collector current IC (A) SJD00239BED 0.1 1 10 Cob VCB VCE = 10 V 104 25°C Collector current IC (A) hFE IC 100 1 6 106 IC / IB = 1 000 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 1 000 4 IC / IB = 1 000 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 2 IB = 100 µA 70 µA Collector-emitter saturation voltage VCE(sat) (V) 1 000 Collector output capacitance C (pF) (Common base, input open circuited) ob 5 VCE(sat) IC 2.4 (1) With a 100 × 100 × 2 mm Al heat sink (2) Without heat sink Collector current IC (A) Collector power dissipation PC (W) 6 10 24 IE = 0 f = 1 MHz TC = 25°C 20 16 12 8 4 0 1 10 Collector-base voltage VCB (V) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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