Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm 0.33+0.05 –0.02 ■ Features 0.10+0.05 –0.02 5˚ 0.80±0.05 1.20±0.05 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO 0.15 min. 3 2 (0.40) (0.40) ■ Absolute Maximum Ratings Ta = 25°C 0.80±0.05 1.20±0.05 Unit Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open) VCEO 100 V Emitter-base voltage (Collector open) VEBO 15 V Collector current IC 20 mA Peak collector current ICP 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 5˚ 1 : Base 2 : Emitter 3 : Collector 0.15 max. Rating 0.52±0.03 Symbol 0 to 0.01 Parameter 0.15 min. 1 0.23+0.05 –0.02 SSSMini3-F1 Package Marking Symbol: 3B ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 100 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 100 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 15 Collector-base cutoff current (Emitter open) ICBO VCB = 60 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0 Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA VCE(sat) IC = 10 mA, IB = 1 mA 0.05 VCB = 10 V, IE = −2 mA, f = 200 MHz 200 MHz VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT 80 mV Collector-emitter saturation voltage Transition frequency Noise voltage fT NV Conditions Min Typ Max Unit V 400 0.1 µA 1.0 µA 1 200 0.20 V Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: June 2004 SJC00307AED 1 2SD2621 IC VCE 45 35 90 µA 80 µA 70 µA 60 µA 50 µA 30 40 µA IB = 100 µA 100 Collector current IC (mA) 60 40 25 30 µA 20 20 µA 15 10 10 µA 20 5 0 0 40 80 0 120 0 Ambient temperature Ta (°C) VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) Ta = 85°C −25°C 40 20 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) 2 10 12 −25°C 0.01 0.1 1 1.4 800 25°C −25°C 600 400 200 0 1 10 Collector current IC (mA) SJC00307AED 10 100 1000 Collector current IC (mA) Cob VCB VCE = 10 V Ta = 85°C 80 0 8 0.1 hFE IC 100 0 6 1 000 25°C 60 4 25°C Collector-emitter voltage VCE (V) IC VBE 120 2 IC / IB = 10 Ta = 85°C 100 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector power dissipation PC (mW) Ta = 25°C 40 80 VCE(sat) IC 1 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 120 10 f = 1 MHz Ta = 25°C 1 0 10 20 30 Collector-base voltage VCB (V) 40 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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