Power Transistors 2SC5739 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 φ 3.2±0.1 • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 13.7±0.2 4.2±0.2 Solder Dip ■ Features 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 ■ Absolute Maximum Ratings TC = 25°C 1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 6 V Collector current IC 3 A Peak collector current * ICP 6 A Collector power dissipation PC 20 W Ta = 25°C 1.4±0.2 1.6±0.2 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Internal Connection C B 2.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C E Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Max Unit VCB = 60 V, IE = 0 100 µA ICEO VCE = 60 V, IB = 0 100 µA IEBO VEB = 6 V, IC = 0 1 mA hFE1 * VCE = 4 V, IC = 1 A 120 320 hFE2 VCE = 4 V, IC = 3 A 40 VCE(sat) Conditions Min Typ 60 V IC = 3 A, IB = 0.375 A 0.5 V fT VCE = 10 V, IC = 0.1 A, f = 10 MHz Turn-on time ton IC = 1 A, Resistance loaded 0.2 0.3 µs Storage time tstg IB1 = 0.1 A, IB2 = − 0.1 A 0.55 0.70 µs VCC = 50 V 0.10 0.15 µs Transition frequency Fall time tf 180 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE1 120 to 250 160 to 320 Publication date: February 2003 SJD00288AED 1 2SC5739 VCE(sat) IC VCE = 4 V Collector current IC (A) 6 Ta = 100°C 5 25°C 4 3 −25°C 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 10 hFE IC IC / IB = 8 1 Ta = 100°C 25°C −25°C 0.1 0.01 0.001 0.01 Base-emitter voltage VBE (V) 0.1 1 t = 10 ms 0.1 1 10 100 0.1 1 10 Collector current IC (A) 1 000 Ta = 25°C 100 (1) 10 (2) 1 0.1 0.001 (1) Without heat sink (2) With 100 × 100 × 2 mm Al 0.01 0.1 1 Time t (s) Collector-emitter voltage VCE (V) 2 10 1 000 Thermal resistance Rth (°C/W) Collector current IC (A) t = 1 ms 1 0.01 25°C Rth t IC t=1s Ta = 100°C −25°C 100 Collector current IC (A) Non repetitive pulse TC = 25°C 10 I CP 1 000 VCE = 4 V 1 0.01 10 Area of safe operation 100 10 000 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) IC VBE 7 SJD00288AED 10 100 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL