VESD05A6A-HAF Datasheet

VESD05A6A-HAF
www.vishay.com
Vishay Semiconductors
6-Line ESD-Protection Diode Array in LLP75
FEATURES
5
6
• Ultra compact LLP75-7L package
4
• 6-line ESD-protection
7
• Low leakage current IR < 0.1 μA
1
2
• Low load capacitance CD = 13 pF
3
• ESD-immunity acc. IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge
20517
19371
1
MARKING (example only)
• Working voltage range VRWM = 5 V
XX
YY
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu)
(no Sn)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 



21001
Dot = pin 1 marking
XX = date code
YY = type code (see table below)
ORDERING INFORMATION
DEVICE NAME
VESD05A6A-HAF
ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VESD05A6A-HAF-GS08
3000
15 000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VESD05A6A-HAF
LLP75-7L
AT
4.2 mg
UL 94 V-0
MSL level 1
(according
J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS VESD05A6A-HAF
PARAMETER
Peak pulse current
Peak pulse power
TEST CONDITIONS
SYMBOL
VALUE
UNIT
BiAs-Mode: each input (pin 1 - pin 6) to ground (pin 2);
acc. IEC 61000-4-5; tp = 8/20 μs; single shot
IPPM
2.5
A
BiSy-mode: each input (pin 1 - pin 6) to any other input pin.
Pin 2 not connected. Acc. IEC 61000-4-5; tp = 8/20 μs; single shot
IPPM
2.5
A
BiAs-mode: each input (pin 1 - pin 6) to ground (pin 2);
acc. IEC 61000-4-5; tp = 8/20 μs; single shot
PPP
33
W
BiSy-mode: each input (pin 1 - pin 6) to any other input pin.
Pin 2 not connected. Acc. IEC 61000-4-5; tp = 8/20 μs; single shot
PPP
43
W
± 15
kV
± 15
kV
± 10
kV
± 10
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
Acc. IEC61000-4-2; 10 pulses
BiAs-mode: each input (pin 1 - pin 6) to ground
(pin 2)
ESD immunity
Operating temperature
Storage temperature
Rev. 1.4, 15-Jul-15
Acc. IEC 61000-4-2 ; 10 pulses
BiSy-mode: each input (pin 1 - pin 6) to any
other input pin.
Pin 2 not connected
Junction temperature
Contact
discharge
Air
discharge
Contact
discharge
Air
discharge
VESD
VESD
Document Number: 81880
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD05A6A-HAF
www.vishay.com
Vishay Semiconductors
APPLICATION NOTE
With the VESD05A6A-HAF 6 different signal or data lines can be clamped to ground. Due to the different clamping levels in
forward and reverse direction the VESD05A6A-HAF clamping behavior is bidirectional and asymmetrical (BiAs).
L1
L2
L3
6
5
4
2
3
7
1
L4
L5
L6
19365
If symmetrical clamping behaviour is required the VESD05A6A-HAF can also be used as a bidirectional symmetrical protection
device protecting up to 5 lines. In this case pin no. 7 must not be connected.
L1
L2
L3
6
5
4
2
3
7
1
L4
L5
19366
ELECTRICAL CHARACTERISTICS VESD05A6A-HAF (Between pin 1, 2, 3, 4, 5 or 6, and pin 7) 
(Tamb = 25 °C, unless otherwise specified)
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
6
lines
Max. reverse working voltage
VRWM
-
-
5
V
at IR = 0.1 μA
VR
5
-
-
V
Reverse current
at VR = 5 V
IR
-
< 0.01
0.1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
6
6.7
7.5
V
at IPP = 1 A
VC
-
9
10
V
at IPP = IPPM = 2.5 A
VC
-
12
13
V
at IPP = 1 A
VF
-
2
2.5
V
at IPP = IPPM = 2.5 A
VF
-
3.2
4
V
at VR = 0 V; f = 1 MHz
CD
-
13
15
pF
at VR = 2.5 V; f = 1 MHz
CD
-
8
-
pF
Reverse clamping voltage
Forward clamping voltage
Capacitance
Rev. 1.4, 15-Jul-15
Document Number: 81880
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD05A6A-HAF
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
120 %
Rise time = 0.7 ns to 1 ns
10
80 %
1
IF (mA)
Discharge Current IESD
100 %
60 %
53 %
0.1
40 %
27 %
0.01
20 %
0.001
0.5
0%
-10 0 10 20 30 40 50 60 70 80 90 100
0.6
0.7
0.8
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
0.9
1
1.1
VF (V)
19949
Time (ns)
20557
Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF
8
8 µs to 100 %
100 %
7
6
VR (V)
80 %
IPPM
60 %
20 µs to 50 %
5
4
3
40 %
2
20 %
1
0
0.01
0%
0
10
20
30
40
Time (µs)
20548
0.1
1
Fig. 2 - 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
10
100 1000 10 000
IR (µA)
19950
Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR
16
14
Measured acc. IEC 61000-4-5 (8/20 µs - wave form)
f = 1 MHz
12
14
10
12
reverse
10
6
VC (V)
CD (pF)
8
8
VC
4
2
6
0
4
-2
2
0
-6
0
19948
1
2
3
4
0
5
VR (V)
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
Rev. 1.4, 15-Jul-15
forward
-4
19951
0.5
1
1.5
2
2.5
3
3.5
4
IPP (A)
Fig. 6 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
Document Number: 81880
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD05A6A-HAF
www.vishay.com
Vishay Semiconductors
100
acc. IEC 61000-4-2
+ 8 kV
contact discharge
80
VC-ESD (V)
60
40
20
0
- 20
- 10 0 10 20 30 40 50 60 70 80 90
t (ns)
19994
Fig. 7 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
40
20
VC-ESD (V)
0
- 20
- 40
- 60
acc. IEC 61000-4-2
- 8 kV
contact discharge
- 80
- 100
- 10 0 10 20 30 40 50 60 70 80 90
t (ns)
19995
Fig. 8 - Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
200
acc. IEC 61000-4-2
contact discharge
150
VC-ESD (V)
100
50
VC-ESD
0
- 50
- 100
- 150
- 200
0
19954
5
10
15
20
VESD (kV)
Fig. 9 - Typical max. Clamping Voltage at ESD Contact
Discharge (acc. IEC 61000-4-2)
Rev. 1.4, 15-Jul-15
Document Number: 81880
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD05A6A-HAF
www.vishay.com
Vishay Semiconductors
0.45 (0.018)
0.55 (0.022)
0.2 (0.008)
0.3 (0.012)
0.2 (0.008)
0.3 (0.012)
1 (0.039)
0.2 (0.008)
0.3 (0.012)
Heat sink
0.95 (0.037)
1.05 (0.041)
PACKAGE DIMENSIONS in millimeters (Inches): LLP75-7L
0.5 (0.020)
0.6 (0.024)
0.6 (0.024)
0.54 (0.021)
1.65 (0.065)
1.55 (0.061)
0.05 (0.002)
0 (0.000)
0.15 (0.006)
0.25 (0.010)
1.65 (0.065)
Pin 1 marking
1.55 (0.061)
Foot print recommendation:
0.5 (0.020)
0.5 (0.020)
0.3 (0.012)
0.3 (0.012)
0.15 (0.006)
1 (0.039)
1 (0.039)
0.5 (0.020)
0.25 (0.010)
0.15 (0.006)
Document no.:S8-V-3906.02-014 (4)
Created - Date: 04. April 2006
Solder resist mask
Solder pad
0.5 (0.020)
20500
LLP75-7x
S9
F5
Pad layout - view from top / seen at bottom side
S8-V-3906.02-008a (4)
10.12.2009
Rev. 1.4, 15-Jul-15
Pin 1 - location
Document Number: 81880
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000