Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing (0.95) (0.95) 1.9±0.1 (0.65) ■ Features 5˚ 1.50+0.25 –0.05 For muting 2.8+0.2 –0.3 3 2.90+0.20 –0.05 1.1+0.2 –0.1 (R2) 6.8 kΩ 0 to 0.1 Marking Symbol (R1) • UNR2225 (UN2225) FZ 10 kΩ • UNR2226 (UN2226) FY 4.7 kΩ • UNR2227 (UN2227) FW 6.8 kΩ 1.1+0.3 –0.1 10˚ ■ Resistance by Part Number ■ Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 600 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C R1 C B R2 E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 1 µA, IE = 0 30 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0 5 Collector-base cutoff current (Emitter open) ICBO VCB = 30 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 Forward current UNR2227 hFE VCE = 10 V, IC = 100 mA transfer ratio UNR2225/2226 VCE(sat) IC = 50 mA, IB = 2.5 mA Collector-emitter saturation voltage Input resistance UNR2226 Conditions Min −30% 1 µA 1 µA 600 4.7 80 mV +30% kΩ 1.2 6.8 UNR2225 UNR2227 Unit V 100 R1 Max 70 UNR2227 Resistance ratio Typ 10 R1/R2 0.8 1.0 Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00040CED 1 UNR2225/2226/2227 ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Resistance ratio Symbol UNR2226 Conditions Min VI = 7 V, RL = 1 kΩ, f = 1 kHz Ron Typ UNR2227 1.1 UNR2225 1.5 Transition frequency VCB = 10 V, IE = −50 mA, f = 200 MHz fT Max Unit Ω 0.95 200 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Refer to Ron measurment circuit RL R1 f = 1 kHz V = 0.3 V R2 VI VB VV VA Ron = VB × RL (Ω) VA−VB Common characteristics chart PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR2225 VCE(sat) IC IB = 1.0 mA 300 0.9 mA 0.8 mA 0.7 mA 200 0.6 mA 0.5 mA 0.4 mA 100 0.3 mA 0.2 mA 0.1 mA 0 0 2.5 5.0 7.5 10.0 Collector-emitter voltage VCE (V) 2 1 000 hFE IC IC / IB = 10 100 Ta = 75°C −25°C 10 25°C 1 250 VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (mV) IC VCE 400 200 Ta = 75°C 150 100 50 0 1 10 Collector current IC (mA) SJH00040CED 100 25°C −25°C 1 10 102 103 Collector current IC (mA) 104 UNR2225/2226/2227 IO VIN 105 VIN IO 100 VO = 5 V Ta = 25°C VO = 0.2 V Ta = 25°C 10 5 Input voltage VIN (V) 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 14 103 102 10 1 10 1 10 1 1 0.25 100 0.50 0.75 1.00 1.25 0.1 10−3 1.50 Input voltage VIN (V) Collector-base voltage VCB (V) 10−2 10−1 1 10 102 Output current IO (mA) Characteristics charts of UNR2226 VCE(sat) IC IB = 1.0 mA Collector current IC (mA) 0.9 mA 300 0.8 mA 0.7 mA 0.6 mA 200 0.5 mA 0.4 mA 0.3 mA 100 0.2 mA 0.1 mA 0 0 2.5 5.0 7.5 1 000 100 Ta = 75°C 25°C −25°C 10 1 10.0 10 1 Cob VCB 400 Ta = 75°C 300 25°C −25°C 200 100 0 1 000 1 f = 1 MHz 102 10 103 104 Collector current IC (mA) IO VIN 105 VIN IO 100 VO = 5 V Ta = 25°C VO = 0.2 V Ta = 25°C 10 5 Input voltage VIN (V) 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 100 VCE = 10 V Collector current IC (mA) Collector-emitter voltage VCE (V) 14 hFE IC 500 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (mV) IC VCE 400 103 102 10 1 10 1 1 10 Collector-base voltage VCB (V) 100 1 0.25 0.50 0.75 1.00 1.25 Input voltage VIN (V) SJH00040CED 1.50 0.1 10−3 10−2 10−1 1 10 102 Output current IO (mA) 3 UNR2225/2226/2227 Characteristics charts of UNR2227 IC VCE VCE(sat) IC 1 000 IB = 1.0 mA 300 0.9 mA 0.8 mA 0.7 mA 200 0.6 mA 0.5 mA 0.4 mA 100 0.3 mA 0.2 mA 0.1 mA 0 0 2 4 6 IC / IB = 10 100 Ta = 75°C 25°C −25°C 1 10 −25°C 100 50 1 102 10 103 104 Collector current IC (mA) VIN IO 100 VO = 5 V Ta = 25°C f = 1 MHz VO = 0.2 V Ta = 25°C 12 8 Input voltage VIN (V) 10 16 Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 25°C 150 IO VIN 100 1 0.1 10 1 0.01 4 1 10 Collector-base voltage VCB (V) 4 Ta = 75°C 200 0 1 000 100 250 Collector current IC (mA) Cob VCB 0 VCE = 10 V 10 10 Collector-emitter voltage VCE (V) 20 hFE IC 300 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (mV) Collector current IC (mA) 400 100 0.001 0.25 0.50 0.75 1.00 1.25 Input voltage VIN (V) SJH00040CED 1.50 0.1 10−3 10−2 10−1 1 10 Output current IO (mA) 102 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP