Composite Transistors XN04316 (XN4316) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 ■ Basic Part Number 0.50+0.10 –0.05 • UNR2216 (UN2216) + UNR2116 (UN2116) Rating Unit VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 100 mA Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 300 mW Collector current Tr2 Overall Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.1+0.2 –0.1 Parameter 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ: SC-74 0 to 0.1 Symbol Collector-base voltage (Emitter open) 1.1+0.3 –0.1 10˚ ■ Absolute Maximum Ratings Ta = 25°C Tr1 2.8+0.2 –0.3 6 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 5 1.50+0.25 –0.05 4 (0.65) ■ Features 0.16+0.10 –0.06 0.4±0.2 For switching/digital circuits 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: 7U Internal Connection 4 5 Tr2 3 6 Tr1 2 1 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SJJ00065BED 1 XN04316 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.01 mA hFE VCE = 10 V, IC = 5 mA 460 0.25 V Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ R1 Transition frequency fT Typ Max V 0.1 160 4.9 −30% µA V 0.2 VCB = 10 V, IE = −2 mA, f = 200 MHz Unit V IC = 10 mA, IB = 0.3 mA Output voltage high-level Input resistance Min 4.7 +30% 150 V kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 − 0.01 mA hFE VCE = −10 V, IC = −5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ R1 Transition frequency fT Typ Unit V − 0.1 160 µA 460 − 0.25 V − 0.2 V −4.9 −30% VCB = −10 V, IE = 1 mA, f = 200 MHz Max V IC = −10 mA, IB = − 0.3 mA Output voltage high-level Input resistance Min V 4.7 80 +30% kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00065BED XN04316 Characteristics charts of Tr1 VCE(sat) IC IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 120 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 1 Ta = 75°C 25°C 0.1 25°C −25°C 200 100 1 10 0 100 1 IO VIN 104 4 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 75°C 300 −25°C 0.01 0.1 Cob VCB 5 VCE = 10 V 10 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 Collector-base voltage VCB (V) 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJJ00065BED 1.4 0.01 0.1 1 10 100 Output current IO (mA) 3 XN04316 Characteristics charts of Tr2 IC VCE VCE(sat) IC − 0.9 mA − 0.8 mA −120 Collector current IC (mA) Ta = 25°C − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 −2 0 −4 −6 −8 −10 Collector-emitter voltage VCE −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −1 −10 −104 200 4 3 2 25°C −25°C 100 0 −1 −100 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 75°C IO VIN −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 4 300 Collector current IC (mA) (V) f = 1 MHz IE = 0 Ta = 25°C 5 VCE = −10 V −25°C − 0.01 − 0.1 Cob VCB 6 hFE IC 400 Forward current transfer ratio hFE IB = −1.0 mA Collector-emitter saturation voltage VCE(sat) (V) −100 −160 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJJ00065BED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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