PANASONIC XN4604

Composite Transistors
XN04604 (XN4604)
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
2.90+0.20
–0.05
1.9±0.1
(0.95) (0.95)
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
2
1
(0.65)
3
0.30+0.10
–0.05
■ Basic Part Number
0.50+0.10
–0.05
• 2SD1328 + 2SB0970 (2SB970)
Overall
Rating
Unit
VCBO
25
V
Collector-emitter voltage
(Base open)
VCEO
20
V
Emitter-base voltage
(Collector open)
VEBO
12
V
Collector current
IC
0.5
A
Peak collector current
ICP
1
A
Collector-base voltage
(Emitter open)
VCBO
−15
V
Collector-emitter voltage
(Base open)
VCEO
−10
V
Emitter-base voltage
(Collector open)
VEBO
−7
V
Collector current
IC
− 0.5
A
Peak collector current
ICP
−1
A
Total power dissipation
PT
300
mW
0 to 0.1
Parameter
Tr2
Symbol
Collector-base voltage
(Emitter open)
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 5I
Internal Connection
4
5
Tr2
Junction temperature
1.1+0.3
–0.1
1.1+0.2
–0.1
10˚
■ Absolute Maximum Ratings Ta = 25°C
Tr1
0.4±0.2
6
5˚
5
1.50+0.25
–0.05
4
■ Features
0.16+0.10
–0.06
2.8+0.2
–0.3
For amplification of low-frequency output
3
6
Tr1
2
1
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00084BED
1
XN04604
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
25
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
12
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 0
Forward current transfer ratio *1
hFE1
VCE = 2 V, IC = 0.5 A
200
hFE2
VCE = 2 V, IC = 1 A
60
Collector-emitter saturation voltage *1
Base-emitter saturation voltage
*1
Transition frequency
Conditions
VCE(sat)
IC = 0.5 A, IB = 20 mA
VBE(sat)
IC = 0.5 A, IB = 20 mA
fT
Collector output capacitance
(Common base, input open circuited)
Cob
ON resistance *2
Ron
Min
Typ
Max
Unit
V
0.13
0.1
µA
800

0.40
V
1.2
V
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
1.0
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
1 kΩ
*2: Ron test circuit
IB = 1 mA
f = 1 kHz
V = 0.3 V
VB VV
Ron =
• Tr2
VA
VB × 1 000
(Ω)
V A − VB
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−15
V
Collector-emitter voltage (Base open)
VCEO
IC = −1 mA, IB = 0
−10
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−7
Collector-base cutoff current (Emitter open)
ICBO
VCB = −10 V, IE = 0
Forward current transfer ratio *
hFE1
VCE = −2 V, IC = − 0.5 A
100
hFE2
VCE = −2 V, IC = −1 A
60
V
− 0.1
µA
350

Collector-emitter saturation voltage
VCE(sat)
IC = − 0.4 A, IB = −8 mA
− 0.16 − 0.30
V
Base-emitter saturation voltage
VBE(sat)
IC = − 0.4 A, IB = −8 mA
− 0.8
V
VCB = −10 V, IE = 50 mA, f = 200 MHz
130
MHz
VCB = −10 V, IE = 0, f = 1 MHz
22
pF
Transition frequency
Collector output capacitance
(Common base, input open circuited)
fT
Cob
−1.2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
2
SJJ00084BED
XN04604
Common characteristics chart
PT  Ta
Total power dissipation PT (mW)
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of Tr1
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
Ta = 25°C
IB = 4.0 mA
Collector current IC (A)
3.5 mA
3.0 mA
0.8
2.5 mA
2.0 mA
0.6
1.5 mA
0.4
1.0 mA
0.2
0
0.5 mA
0
1
2
3
4
5
6
10
1
Ta = 75°C
10−1
10−2
10−2
VCE = 2 V
Transition frequency fT (MHz)
Forward current transfer ratio hFE
Ta = 75°C
25°C
−25°C
200
10−1
25°C
1 Ta = −25°C
75°C
10−1
10−2
10−2
10
1
Collector current IC (A)
10
VCB = 10 V
Ta = 25°C
200
100
−10
Emitter current IE (mA)
SJJ00084BED
1
10
Cob  VCB
300
0
−1
10−1
Collector current IC (A)
fT  I E
800
0
10−2
1
400
1 000
400
10−1
IC / IB = 10
10
Collector current IC (A)
hFE  IC
600
25°C
−25°C
Collector-emitter voltage VCE (V)
1 200
VBE(sat)  IC
102
IC / IB = 25
−102
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
1.0
102
Base-emitter saturation voltage VBE(sat) (V)
IC  VCE
1.2
24
f = 1 MHz
IE = 0
Ta = 25°C
20
16
12
8
4
0
1
10
102
Collector-base voltage VCB (V)
3
XN04604
Characteristics charts of Tr2
VCE(sat)  IC
IB = −10 mA
Collector current IC (A)
−9 mA
−8 mA
−7 mA
−6 mA
− 0.8
−5 mA
− 0.6
−4 mA
−3 mA
− 0.4
−2 mA
− 0.2
0
−1 mA
−1
0
−2
−3
−4
−5
−6
IC / IB = 50
−10
−1
Ta = 75°C
25°C
−10−2
−10−2
Transition frequency fT (MHz)
Forward current transfer ratio hFE
Ta = 75°C
25°C
300
−25°C
200
100
−1
Collector current IC (A)
4
25°C
−1
−10
−10−1
−10
−10−2
−10−2
120
80
40
10
Emitter current IC (mA)
SJJ00084BED
−1
−10
Cob  VCB
VCB = −10 V
Ta = 25°C
1
−10−1
Collector current IC (A)
160
0
Ta = −25°C
75°C
fT  I E
500
−10−1
−1
200
VCE = −2 V
0
−10−2
−10−1
IC / IB = 50
−10
Collector current IC (A)
hFE  IC
400
−25°C
−10−1
Collector-emitter voltage VCE (V)
600
VBE(sat)  IC
−102
102
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
−1.0
−102
Base-emitter saturation voltage VBE(sat) (V)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−1.2
80
f = 1 MHz
IE = 0
Ta = 25°C
60
40
20
0
−1
−10
−102
Collector-base voltage VCB (V)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP