Composite Transistors UP03397 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 4 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 5˚ ■ Features (0.20) 1.20±0.05 5 0.10±0.02 0.20 –0.02 1.60±0.05 For digital circuits 1.60±0.05 ■ Basic Part Number 5˚ 0.10 max • UNR1154 + UNR1211 0.55±0.05 Display at No.1 lead Parameter Tr1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 100 mA Collector-base voltage (Emitter open) VCBO −30 V Collector-emitter voltage (Base open) VCEO −30 V Collector current IC −100 mA Total power dissipation PT 125 mW Collector current Tr2 Overall Junction temperature Storage temperature Publication date: August 2004 Tj 125 Tstg −55 to +125 °C °C SJJ00296AED 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) 0 to 0.02 ■ Absolute Maximum Ratings Ta = 25°C 4: Collector (Tr2) 5: Collector (Tr1) Base (Tr2) SSMini5-F2 Package Marking Symbol: 3M Internal Connection (C2) 4 (C1,B2) 5 R1 10 kΩ Tr1 R2 10 kΩ 1 (E1) Tr2 R1 10 kΩ 2 (B1) R2 47 kΩ 3 (E2) 1 UP03397 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.5 mA hFE VCE = 10 V, IC = 5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions Min Typ VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ Unit V V 0.1 µA 35 IC = 10 mA, IB = 0.3 mA Output voltage high-level Max 0.25 4.9 V V 0.2 V Input resistance R1 −30% 10 +30% kΩ Resistance ratio R1 / R 2 0.8 1.0 1.2 Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −30 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −30 Collector-base cutoff current (Emitter open) ICBO VCB = −30 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −30 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −3 V, IC = 0 − 0.1 mA hFE VCE = −10 V, IC = −5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ R1 Resistance ratio R1 / R 2 Transition frequency fT Typ Unit V − 0.1 µA 80 −1.2 V − 0.2 V +30% kΩ −4.9 −30% VCB = −10 V, IE = 1 mA, f = 200 MHz Max V IC = −50 mA, IB = − 0.33 mA Output voltage high-level Input resistance Min V 10 0.213 80 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 150 125 100 75 50 25 0 0 40 80 120 Ambient temperature Ta (°C) 2 SJJ00296AED UP03397 Characteristics charts of Tr1 VCE(sat) IC 0.9 mA IB = 1.0 mA 0.8 mA 0.7 mA 120 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 1 IC / IB = 10 VCE = 10 V 0.1 Ta = 85°C −25°C 25°C 0.01 1 Collector-emitter voltage VCE (V) 10 50 1 100 10 30 Collector-base voltage VCB (V) 40 1 000 VO = 0.2 V Ta = 25°C 10 1 1 0.1 1 100 10 VIN IO 100 Input voltage VIN (V) Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob −25°C 100 Collector current IC (mA) VO = 5 V Ta = 25°C f = 1 MHz Ta = 25°C 20 150 IO VIN 1 000 10 25°C 200 0 0.1 100 Ta = 85°C 250 Collector current IC (mA) Cob VCB 10 0 hFE IC 300 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 1 2 3 4 Input voltage VIN (V) SJJ00296AED 5 0.1 0.1 1 10 100 Output current IO (mA) 3 UP03397 Characteristics charts of Tr2 IC VCE IB = −500 µA Collector current IC (mA) −80 −400 µA −60 −300 µA −40 −200 µA −20 −100 µA 0 0 −2 −4 −6 −8 −10 IC / IB = 151 Ta = 85°C −10 25°C −25°C −1 −10 −12 −100 Collector-emitter voltage VCE (V) −10 −20 −30 Collector-base voltage VCB (V) 4 25°C 150 −25°C 100 50 0 − 0.1 −1 000 −40 −10 −1 −1.0 −1.5 Input voltage VIN (V) SJJ00296AED −100 −10 −1 000 VIN IO −10 VO = −5 V Ta = 25°C − 0.1 − 0.5 −1 Collector current IC (mA) Input voltage VIN (V) Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 0 Ta = 85°C 200 IO VIN −100 f = 1 MHz Ta = 25°C 1 VCE = −10 V Collector current IC (mA) Cob VCB 10 hFE IC 250 Forward current transfer ratio hFE Ta = 25°C VCE(sat) IC −100 Collector-emitter saturation voltage VCE(sat) (V) −100 −2.0 VO = − 0.2 V Ta = 25°C −1 − 0.1 − 0.1 −1 −10 Output current IO (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP