Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm ■ Features ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SB1603 base voltage 2SB1603A Collector to 2SB1603 Ratings –40 VCBO –50 –20 VCEO emitter voltage 2SB1603A –40 Unit V 7° –5 V Peak collector current ICP –8 A Collector current IC –4 A dissipation PC Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol Parameter Conditions ICBO VCB = –40V, IE = 0 Emitter cutoff current IEBO VEB = –5V, IC = 0 2SB1603 voltage 2SB1603A Forward current transfer ratio 3.0±0.2 min hFE1 VCE = –2V, IC = – 0.1A 45 VCE = –2V, IC = –1A 90 hFE2 * IC = –2A, IB = – 0.1A Base to emitter saturation voltage VBE(sat) IC = –2A, IB = – 0.1A Transition frequency fT VCE = –5V, IC = – 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf IC = –2A, IB1 = – 0.2A, IB2 = 0.2A typ max Unit –50 µA –50 µA –20 IC = –10mA, IB = 0 VCE(sat) FE2 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package VCEO Collector to emitter saturation voltage *h 1 2 3 (TC=25˚C) Collector cutoff current Collector to emitter 0.75±0.1 W 2 ■ Electrical Characteristics 0.7±0.1 V VEBO 25 2.6±0.1 1.2±0.15 1.45±0.15 2.54±0.2 5.08±0.4 Emitter to base voltage Collector power TC=25°C 15.0±0.3 (TC=25˚C) 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip ● φ3.2±0.1 +0.5 ● Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 13.7–0.2 ● 4.6±0.2 9.9±0.3 V –40 260 – 0.5 –1.5 V V 150 MHz 0.3 µs 0.4 µs 0.1 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SB1603, 2SB1603A IC — VCE (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 35 30 25 (1) 20 15 10 (2) –50mA –45mA –40mA –4 –35mA –30mA –3 –25mA –20mA –2 –10mA –5mA 0 0 25 50 75 100 125 150 0 Ambient temperature Ta (˚C) –2 –8 –10 TC=–25˚C 25˚C 100˚C – 0.3 – 0.1 – 0.03 –1 –3 –10 25˚C –25˚C –30 –10 –3 –1 – 0.1 – 0.01 – 0.03 – 0.1 – 0.3 ton, tstg, tf — IC –1 –3 –10 Area of safe operation (ASO) –100 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–20V TC=25˚C ton 0.3 tstg tf 0.1 Non repetitive pulse TC=25˚C –30 Collector current IC (A) 1 –10 ICP –3 IC t=1ms 10ms 1s –1 – 0.3 2SB1603 – 0.03 0 –1 –2 –3 –4 –5 –6 –7 Collector current IC (A) –8 – 0.01 –1 2SB1603A – 0.1 0.03 0.01 –3 –10 VCE=–2V f=10MHz TC=25˚C 300 100 30 10 3 1 0.3 Collector current IC (A) 10 –1 Collector current IC (A) VCE=–2V Collector current IC (A) 3 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 TC=100˚C –300 – 0.3 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 – 0.03 fT — IC –100 –1 – 0.1 Transition frequency fT (MHz) –10 TC=100˚C 25˚C –25˚C –1 1000 IC/IB=20 –30 –3 –3 hFE — IC –1000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –6 –10 Collector to emitter voltage VCE (V) VBE(sat) — IC –100 Switching time ton,tstg,tf (µs) –4 IC/IB=20 –30 – 0.3 –15mA (3) 0 2 TC=25˚C –1 5 VCE(sat) — IC –100 IB=–80mA –5 Collector current IC (A) Collector power dissipation PC (W) –6 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 40 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) 0.1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) –10 Power Transistors 2SB1603, 2SB1603A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 102 (1) (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3