Power Transistors 2SB941, 2SB941A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A Unit: mm ■ Features Parameter (TC=25˚C) Symbol Collector to 2SB941 base voltage 2SB941A Collector to 2SB941 Ratings –60 VCBO –80 –60 VCEO emitter voltage 2SB941A –80 0.7±0.1 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 ■ Absolute Maximum Ratings 10.0±0.2 φ3.1±0.1 Unit V V 4.0 ● 14.0±0.5 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 Solder Dip ● 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 Emitter to base voltage VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A Collector power TC=25°C dissipation 35 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SB941 current 2SB941A Collector cutoff 2SB941 current 2SB941A ICES ICEO IEBO Emitter cutoff current Collector to emitter 2SB941 voltage 2SB941A Forward current transfer ratio Conditions typ max –200 VCE = –80V, VBE = 0 –200 VCE = –30V, IB = 0 –300 VCE = –60V, IB = 0 –300 VEB = –5V, IC = 0 –1 –60 VCEO IC = –30mA, IB = 0 hFE1* VCE = –4V, IC = –1A 70 10 hFE2 VCE = –4V, IC = –3A VBE VCE = –4V, IC = –3A Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = – 0.375A Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf FE1 min VCE = –60V, VBE = 0 Base to emitter voltage *h 3 (TC=25˚C) Parameter Collector cutoff 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 ■ Electrical Characteristics 5.08±0.5 1 IC = –1A, IB1 = – 0.1A, IB2 = 0.1A Unit µA µA mA V –80 250 –1.8 –1.2 V V 30 MHz 0.5 µs 1.2 µs 0.3 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. 1 Power Transistors 2SB941, 2SB941A PC — Ta IC — VCE 40 30 (1) 20 10 TC=25˚C IB=–100mA –4 –80mA –60mA –3 –40mA –30mA –20mA –2 40 60 80 100 120 140 160 –2 0 –4 –6 –8 –1 – 0.3 TC=100˚C – 0.1 –25˚C 25˚C –1 –3 3000 300 100 TC=100˚C 25˚C –25˚C 10 3 –1 –3 t=1ms 10ms –1 DC –3 –10 –30 2SB941A 2SB941 – 0.1 – 0.03 –100 –300 –1000 Collector to emitter voltage VCE 2 10 (V) –1 –3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Collector current IC (A) ICP – 0.3 30 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 103 IC 100 3 Area of safe operation (ASO) –10 VCE=–5V f=10MHz TC=25˚C 300 Collector current IC (A) –100 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 –2.0 1000 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 Non repetitive pulse TC=25˚C –1.6 3000 30 Collector current IC (A) –30 –1.2 fT — IC Transition frequency fT (MHz) –3 – 0.8 10000 1000 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 – 0.4 Base to emitter voltage VBE (V) VCE=–4V Forward current transfer ratio hFE –10 – 0.01 –1 0 hFE — IC IC/IB=10 –3 –10 10000 –30 –25˚C –4 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 – 0.03 25˚C TC=100˚C –4mA –16mA 0 Ambient temperature Ta (˚C) –6 –8mA 0 20 –8 –2 –12mA –1 (4) 0 VCE=–4V –5 (2) (3) –10 Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE –6 Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10