Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC5026 Unit: mm ■ Absolute Maximum Ratings * 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 (Ta=25˚C) 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –5 V Peak collector current ICP –1.5 A Collector current IC –1 A Collector power dissipation (TC=25˚C) PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1Z Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit – 0.1 µA Collector cutoff current ICBO VCB = –40V, IE = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –80 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –80 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V hFE1 *1 VCE = –2V, IC = –100mA 120 hFE2 VCE = –2V, IC = –500mA*2 60 Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –50mA*2 – 0.2 – 0.3 V Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA*2 – 0.85 –1.2 V Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 120 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 15 Forward current transfer ratio 340 MHz 30 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R hFE1 120 ~ 240 170 ~ 340 1 Transistor 2SA1890 PC — Ta IC — VCE 1.0 0.8 Ta=25˚C –1.0 IB=–8mA – 0.8 0.6 0.4 –4mA –3mA –2mA – 0.4 0.2 –1mA – 0.2 IC/IB=10 –30 –10 Ta=75˚C 25˚C –3 –1 –25˚C – 0.3 – 0.1 – 0.03 0 40 60 80 100 120 140 160 0 –10 –3 Ta=–25˚C 25˚C –75˚C – 0.3 – 0.1 – 0.03 –1 –3 –10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 10 8 6 4 2 0 1 3 10 30 100 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 300 200 1000 Collector to base voltage VCB (V) –3 –10 VCB=–10V Ta=25˚C VCE=–2V 180 250 200 –1 Collector current IC (A) fT — IE Ta=75˚C 25˚C 150 –25˚C 100 50 160 140 120 100 80 60 40 20 0 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) Cob — VCB 12 –8 300 Forward current transfer ratio hFE –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –6 hFE — IC IC/IB=10 –1 –4 Collector to emitter voltage VCE (V) VBE(sat) — IC –100 –2 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –5mA – 0.6 0 Collector output capacitance Cob (pF) –7mA –6mA Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC –100 –1.2 Collector current IC (A) Collector power dissipation PC (W) 1.2 –10 1 3 10 30 Emitter current IE (mA) 100