Power Transistors 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification and switching Complementary to 2SD1260 and 2SD1260A emitter voltage 2SB937A –60 VCEO –80 10.0±0.3 Unit: mm V Emitter to base voltage VEBO –5 V Peak collector current ICP –4 A Collector current IC –2 A Collector power TC=25°C dissipation Ta=25°C Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SB937 current 2SB937A Collector cutoff 2SB937 current 2SB937A Collector to emitter 2SB937 voltage 2SB937A R0.5 R0.5 0 to 0.4 1.1 max. 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 Conditions min typ max –1 VCB = –80V, IE = 0 –1 VCE = –30V, IB = 0 –2 VCE = –40V, IB = 0 –2 IEBO VEB = –5V, IC = 0 –2 VCEO IC = –30mA, IB = 0 hFE1 VCE = –4V, IC = –1A 1000 hFE2* VCE = –4V, IC = –2A 2000 ICEO Forward current transfer ratio 1.0±0.1 VCB = –60V, IE = 0 ICBO Emitter cutoff current 6.0±0.3 (TC=25˚C) Parameter Collector cutoff 3.4±0.3 2.54±0.3 W 1.3 ■ Electrical Characteristics 8.5±0.2 0.8±0.1 35 PC Junction temperature 2.0 V 14.7±0.5 2SB937 1:Base 2:Collector 3:Emitter N Type Package 3 +0.4 Collector to –80 2 3.0–0.2 2SB937A –60 VCBO 1 Unit 4.4±0.5 base voltage Ratings 5.08±0.5 +0 2SB937 10.5min. 2.54±0.3 (TC=25˚C) Symbol Collector to 0.5max. 1.5–0.4 Parameter 1.1max. 0.8±0.1 10.0±0.3 ■ Absolute Maximum Ratings 1.5max. 2.0 ● High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 ● 1.0±0.1 1.5±0.1 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 –60 Unit mA mA mA V –80 10000 Base to emitter voltage VBE VCE = –4V, IC = –2A –2.8 V Collector to emitter saturation voltage VCE(sat) IC = –2A, IB = –8mA –2.5 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf *h FE2 Internal Connection Rank classification Rank hFE2 Q IC = –2A, IB1 = –8mA, IB2 = 8mA P 20 MHz 0.4 µs 1.5 µs 0.5 µs C B 2000 to 5000 4000 to 10000 E 1 Power Transistors 2SB937, 2SB937A PC — Ta IC — VCE IC — VBE –5 (1) 30 20 10 IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA – 0.8mA –4 –3 – 0.6mA –2 – 4.0mA – 0.2mA –1 25˚C TC=100˚C –4 –25˚C –2 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –1 –2 –3 –4 VCE(sat) — IC TC=100˚C –25˚C – 0.3 25˚C – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 TC=100˚C 104 25˚C 1000 –25˚C 103 102 Collector current IC (A) –1 –3 Area of safe operation (ASO) –10 ICP –3 t=1ms IC 10ms 300ms – 0.3 – 0.03 -3 –10 –30 2SB937A 2SB937 – 0.1 –100 –300 –1000 Collector to emitter voltage VCE (V) 30 10 3 –1 –3 –10 –30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 100 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 –100 Collector to base voltage VCB (V) 103 –30 300 1 – 0.1 – 0.3 –10 Collector current IC (A) –100 –3.2 IE=0 f=1MHz TC=25˚C 3000 10 – 0.01 – 0.03 – 0.1 – 0.3 –10 –2.4 Cob — VCB Collector output capacitance Cob (pF) Forward current transfer ratio hFE –3 –1.6 10000 VCE=–4V –10 –1 – 0.8 Base to emitter voltage VBE (V) hFE — IC IC/IB=250 – 0.01 –1 0 105 –30 –1 –5 Collector to emitter voltage VCE (V) –100 Collector to emitter saturation voltage VCE(sat) (V) –6 – 0.1mA (3) Collector current IC (A) –8 (2) 0 2 VCE=–4V Collector current IC (A) 40 –10 TC=25˚C (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 1 Time t (s) 10 102 103 104